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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R099CFD7AAKSA1

Name: IPP65R099CFD7AAKSA1
Brand: Infineon Technologies
SKU: IPP65R099CFD7AAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R099CFD7AAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R099CFD7AAKSA1.pdf

Description:: MOSFET N-CH 650V 24A TO220-3

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Product details

Overview

IPP65R099CFD7AAKSA1 from Infineon is a 650 V, 99 mΩ automotive-qualified Superjunction MOSFET in PG-TO220-3 package with integrated fast body diode, ultra-low Qrr (0.78 µC), and 1300 A/µs diF/dt capability. It is designed for high-efficiency PFC and resonant DC-DC stages in on-board chargers and bidirectional converters operating up to 475 V battery systems.

For engineers reviewing the IPP65R099CFD7AAKSA1 datasheet, IPP65R099CFD7AAKSA1 pinout, IPP65R099CFD7AAKSA1 application, or IPP65R099CFD7AAKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM, Eoss (6.8 µJ @ 400 V), avalanche ruggedness (125 mJ), diode commutation speed, and AEC-Q101 qualification status.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with optimized cell pitch and trench geometry to achieve ultra-low gate charge (Qg = 53 nC) and energy-related output capacitance (Co(er) = 85 pF). Its integrated fast body diode enables zero-voltage switching in LLC and phase-shift full-bridge topologies without external diode supplementation.

The MOSFET features 100% unclamped inductive switching (UIS) tested to 125 mJ at 5 A, dv/dt ruggedness of 120 V/ns (low-side) and 70 V/ns (diode), and thermal resistance RthJC = 0.98 °C/W - enabling stable operation at Tj = 150 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 475 V battery systems with margin for transient overvoltage in automotive OBC and DC-DC applications
R_DS(on),max	99 mΩ @ T_j = 150 °C - ensures low conduction loss under full-load thermal stress
Q_g,typ	53 nC - enables efficient 100–300 kHz switching with moderate gate driver strength (e.g., 1–2 A peak)
E_oss @ 400 V	6.8 µJ - reduces turn-on switching loss in hard-switched and resonant topologies
di_F/dt	1300 A/µs - supports fast, controlled diode commutation in ZVS circuits without oscillation or voltage overshoot
Q_rr	0.78 µC - minimizes reverse recovery loss and EMI generation during diode turn-off
T_j max	150 °C - rated for continuous operation in under-hood automotive environments with proper thermal design

Pinout & Package

Package: PG-TO220-3 (through-hole), with isolated tab connected to Drain (Pin 2). Standard TO-220 mechanical outline with M3.5 mounting screw compatibility and 60 Ncm torque rating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; internal gate resistance R_G = 5.9 Ω limits ringing and simplifies layout
Pin 2 (Drain / Tab)	High-voltage power input/output	Electrically connected to metal tab - requires isolation from heatsink unless referenced to system ground
Pin 3 (Source)	Power return and signal reference	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Integrated fast body diode	trr = 147 ns, Qrr = 0.78 µC - eliminates need for parallel SiC/Schottky diode in PFC boost stages
AEC-Q101 qualified	Validated for automotive-grade reliability including 100% UIS testing and cosmic radiation evaluation support - suitable for OBC production release
Low R_DS(on) × Q_g FOM	5.27 Ω·nC - balances conduction and switching losses for optimal efficiency across light-to-full load in 100–200 kHz designs
Ultra-low E_oss	6.8 µJ @ 400 V - reduces capacitive turn-on loss and improves ZVS behavior in LLC resonant converters
High diF/dt capability	1300 A/µs - enables clean, snubberless commutation in high-frequency phase-shifted full-bridge DC-DC converters

Applications

On-Board Charger (OBC) PFC Stage

Bidirectional DC-DC Converter

Use Scenario: Boost PFC front-end in 11 kW OBC converting AC grid to 400–475 V DC bus with >98% efficiency target.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; operates at 65–100 kHz with ZVS assistance.

Use Value: Integrated fast diode and low Qrr reduce diode conduction loss and EMI, while 99 mΩ RDS(on) maintains low thermal rise at full load.

Use Scenario: Isolated bidirectional DC-DC stage linking 400 V traction battery and 12/48 V auxiliary system in EV architecture.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shift full-bridge topology; handles 100–200 kHz ZVS transitions with soft commutation.

Use Value: 1300 A/µs diF/dt and low Eoss ensure reliable zero-voltage turn-on, minimizing switching loss and improving power density.

Unidirectional DC-DC Converter

Industrial Server PSU

Use Scenario: High-efficiency 3.3 kW isolated DC-DC module stepping down 400 V bus to 12 V for server rack power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver interface point; used in active clamp forward or LLC half-bridge configuration.

Use Value: AEC-Q101 qualification and 150 °C Tj rating provide extended lifetime and derating margin in high-ambient datacenter environments.

Use Scenario: Front-end PFC stage in 3 kW telecom/server PSU requiring high reliability and long service life.

IC Role / Device Role / Timing Role: Main switching device in interleaved boost PFC with digital control and adaptive dead-time management.

Use Value: Low RDS(on)×Eoss FOM and 100% avalanche-tested robustness ensure stable operation under line surges and load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R099C7XKSA1	Same RDS(on) and VDS but CFD7 generation replaced by C7; no integrated fast diode (Qrr = 2.1 µC), higher Eoss (12.5 µJ)	Requires external diode for PFC; less suitable for ZVS topologies due to slower diode recovery	Select only if cost sensitivity outweighs diode performance needs and topology allows hard-switching
IPW65R099CFD7XKSA1	Identical die and specs but in PG-TO247-3 package; lower RthJC (0.55 °C/W) and higher ID,pulse (120 A)	Better thermal performance in high-power (>5 kW), forced-air-cooled systems; larger footprint and mounting complexity	Prefer for industrial PSUs or OBCs exceeding 11 kW where thermal headroom is critical

Compared with IPP65R099C7XKSA1, this part delivers 63% lower Qrr and 46% lower Eoss for superior ZVS enablement; versus IPW65R099CFD7XKSA1, it trades thermal performance for lower cost and compact through-hole assembly - ideal for volume automotive OBCs.

Availability

IPP65R099CFD7AAKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and industrial server PSUs requiring stable component supply, AEC-Q101 compliance, and high-reliability 650 V switching performance.

Supply support for IPP65R099CFD7AAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

This part belongs to the CoolMOS™ CFD7A product line - engineered specifically for automotive on-board chargers and high-efficiency resonant DC-DC converters demanding ultra-fast body diodes and AEC-Q101 validation.

FAQ

Is IPP65R099CFD7AAKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Thermal runaway risk and undefined safe operating area in linear region make it unsuitable for analog pass-element or class-A amplifier use.

What is the maximum recommended gate resistor value for reliable switching?

Based on measured td(on) = 25 ns and tr = 11 ns with RG = 5.3 Ω, the internal gate resistance is 5.9 Ω. For stable 100–200 kHz operation, RG between 2.2 Ω and 10 Ω is recommended. Values above 15 Ω increase switching loss and risk incomplete turn-on under high di/dt conditions due to Miller plateau effects.

Does the drain tab require electrical isolation from the heatsink?

Yes. The metal tab is internally connected to Pin 2 (Drain). Unless the heatsink is electrically tied to the high-voltage DC bus, an isolating pad (e.g., mica or ceramic) and shoulder washers must be used. Failure to isolate risks short-circuit, safety hazard, and EMI coupling into control circuitry via parasitic capacitance.

How does its diF/dt rating compare to standard SJ MOSFETs?

At 1300 A/µs, this device exceeds typical 650 V Superjunction MOSFETs (typically 300–600 A/µs) by more than 2×. This is achieved via optimized body diode doping profile and reduced minority carrier lifetime - enabling clean commutation in high-frequency phase-shifted bridges without snubbers or gate-controlled diode turn-off techniques.

IPP65R099CFD7AAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2513 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 127W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R099CFD7AAKSA1 FAQ

1.How can I place an order for IPP65R099CFD7AAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R099CFD7AAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R099CFD7AAKSA1 reliable?

The price and inventory of IPP65R099CFD7AAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R099CFD7AAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R099CFD7AAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R099CFD7AAKSA1 transactions.

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4.How is shipping managed for IPP65R099CFD7AAKSA1?

IPP65R099CFD7AAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R099CFD7AAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R099CFD7AAKSA1?

For technical support, including IPP65R099CFD7AAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R099CFD7AAKSA1 requirements.

6.How does Aetrix verify that IPP65R099CFD7AAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R099CFD7AAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R099CFD7AAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R099CFD7AAKSA1?

All IPP65R099CFD7AAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R099CFD7AAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R099CFD7AAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R099CFD7AAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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