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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R110CFDAAKSA1

Name: IPP65R110CFDAAKSA1
Brand: Infineon Technologies
SKU: IPP65R110CFDAAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R110CFDAAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R110CFDAAKSA1.pdf

Description:: MOSFET N-CH 650V 31.2A TO220-3

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Product details

Overview

IPP65R110CFDAAKSA1 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C) automotive-qualified N-channel superjunction MOSFET in TO-220 package, featuring R_DS(on) = 0.11 Ω (max), Q_g = 118 nC (typ), and ultra-fast body diode with t_rr = 150 ns - engineered for high-efficiency resonant LLC and PFC stages in on-board chargers and DC-DC converters.

For engineers reviewing the IPP65R110CFDAAKSA1 datasheet, IPP65R110CFDAAKSA1 pinout, IPP65R110CFDAAKSA1 application, or IPP65R110CFDAAKSA1 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), E_oss = 9.2 µJ @ 400 V, AEC-Q101 qualification, and low FOM (R_DS(on) × Q_g) for soft-switching reliability.

Technical Context

This CoolMOS™ CFDA device implements a charge-balanced superjunction structure enabling simultaneous low conduction loss (R_DS(on) = 0.11 Ω) and fast switching (t_fall = 6 ns, t_off-delay = 68 ns). Its optimized gate charge profile (Q_gs = 21 nC, Q_gd = 64 nC) supports stable operation under high dv/dt (50 V/ns) in half-bridge configurations.

The integrated body diode delivers robust reverse recovery performance: Q_rr = 0.8 µC, I_rrm = 8.3 A, and t_rr = 150 ns at di/dt = 100 A/µs - critical for ZVS/ZCS topologies where diode commutation stress dominates failure modes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V bus designs with ≥1.6× safety margin for transient overvoltage in automotive 48 V–800 V systems
R_DS(on), max	0.11 Ω - enables <1.2 W conduction loss at 31.2 A, reducing heatsink requirements in space-constrained OBC modules
Q_g, typ	118 nC - determines gate drive power and rise/fall time control; compatible with standard 1–2 A peak gate drivers
E_oss @ 400 V	9.2 µJ - directly impacts turn-on switching loss in resonant converters; 30% lower than prior-generation CoolMOS™ CFD
t_rr	150 ns - ensures clean zero-current switching in LLC secondaries without voltage spikes or shoot-through risk
di/dt (body diode)	900 A/µs - sustains hard commutation events in phase-shifted full-bridge inverters without latch-up
AEC-Q101	Qualified - validated for automotive powertrain and charging applications per stress test requirements (HTGB, HTRB, TC, UHAST)

Pinout & Package

Package: TO-220 (PG-TO220), through-hole, single-ended heat transfer via drain tab. Mounting torque: 60 Ncm (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring ≤20 V drive; R_G = 1.3 Ω limits ringing during fast transitions
Pin 2 (Drain)	High-voltage power output	Internally connected to metal tab; must be electrically isolated from heatsink unless floating topology used
Pin 3 (Source)	Power return / reference node	Common source node for gate drive return path; layout critical to minimize L_GS in high-di/dt switching

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 150 ns, Q_rr = 0.8 µC - eliminates need for external SiC/Schottky anti-parallel diodes in PFC boost stages
High commutation ruggedness	di/dt = 900 A/µs, E_AS = 845 mJ - withstands repetitive avalanche energy in unregulated startup or overload conditions
Low figure-of-merit	R_DS(on) × Q_g = 13.0 Ω·nC - reduces total switching + conduction loss by >25% vs. standard SJ-MOSFETs at 100 kHz
AEC-Q101 qualification	Validated for automotive temperature range (−40°C to +150°C) and mechanical shock/vibration - suitable for under-hood OBC mounting

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost converter operating at 65–100 kHz in 3.3 kW bidirectional OBC for EVs.

IC Role / Device Role / Timing Role: Main switching transistor handling 400 V DC bus and 31.2 A RMS current; synchronized with controller for ZVS turn-on.

Use Value: Low E_oss (9.2 µJ) and fast t_rr (150 ns) reduce switching loss by 35% vs. legacy CoolMOS™ CFD, enabling >98.5% PFC efficiency.

Use Scenario: Primary-side switch in 6.6 kW LLC transformer-isolated DC-DC stage converting 400 V battery to 14 V/48 V auxiliary supply.

IC Role / Device Role / Timing Role: High-side resonant switch operating in soft-switching mode with variable frequency control; body diode conducts freewheeling current.

Use Value: 900 A/µs di/dt rating prevents commutation failure during light-load ZCS transitions, improving reliability across full load range.

Industrial AC-DC Power Supply

Solar Microinverter Half-Bridge

Use Scenario: 1.5 kW telecom rectifier with active clamp forward topology in harsh ambient environments.

IC Role / Device Role / Timing Role: Main power switch subjected to repeated avalanche stress during clamp cycle; requires robust unclamped inductive switching capability.

Use Value: E_AS = 845 mJ and 50 V/ns dv/dt ruggedness eliminate need for snubbers, simplifying BOM and improving MTBF.

Use Scenario: High-side switch in 300 W microinverter half-bridge converting PV panel output (30–60 V) to 230 V AC grid.

IC Role / Device Role / Timing Role: Fast-switching device operating at 50–100 kHz with synchronous rectification; body diode handles reverse recovery during dead-time.

Use Value: Ultra-low Q_rr (0.8 µC) minimizes reverse recovery loss and EMI generation, meeting CISPR-32 Class B conducted emission limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFDA	Same die, TO-247 package; R_thJC = 0.45 K/W vs. 0.45 K/W (identical), but higher thermal mass and larger footprint	Better suited for forced-air-cooled industrial SMPS where PCB real estate is less constrained	Select when higher power dissipation (>277 W) or enhanced thermal cycling endurance is required
IPP65R110CFDXKSA1	CFDx variant: slightly higher R_DS(on) (0.115 Ω), reduced Q_g (105 nC), no AEC-Q101 qualification	Targeted at cost-sensitive industrial power supplies, not automotive-grade systems	Choose only for non-automotive applications where AEC-Q101 compliance is unnecessary and gate drive loss reduction is prioritized

Compared with IPW65R110CFDA and IPP65R110CFDXKSA1, IPP65R110CFDAAKSA1 uniquely balances automotive qualification, TO-220 form factor, and optimized E_oss/Q_rr for compact, high-reliability resonant converters - making it the default choice for space-limited OBC primary switches.

Availability

IPP65R110CFDAAKSA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC DC-DC converters, and industrial AC-DC power supplies requiring stable component supply, automotive-grade reliability, and TO-220 thermal-mechanical compatibility.

Supply support for IPP65R110CFDAAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices since 1999.

The CoolMOS™ CFDA product line was developed specifically for high-efficiency, high-reliability resonant and hard-switched power conversion in automotive electrification systems - emphasizing body diode robustness, low E_oss, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current for IPP65R110CFDAAKSA1 at T_C = 100°C?

The maximum continuous drain current is 19.7 A at case temperature of 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limitations of the TO-220 package under sustained conduction; actual usable current depends on heatsink design and ambient airflow.

Does IPP65R110CFDAAKSA1 require a negative gate voltage for reliable turn-off?

No - the device specifies gate-source voltage limits of −20 V to +20 V (static), and −30 V to +30 V (AC), but standard 0 V to +12 V or +15 V gate drive is sufficient for full enhancement and safe turn-off. Negative bias is not required due to low gate threshold voltage (3.5–4.5 V) and high noise immunity.

How does the body diode performance compare to discrete SiC Schottky diodes in PFC applications?

While SiC Schottky diodes offer zero Q_rr, IPP65R110CFDAAKSA1's body diode achieves Q_rr = 0.8 µC and t_rr = 150 ns - low enough to avoid significant reverse recovery loss at 100 kHz. Its integration eliminates layout parasitics and cost of a separate diode, with proven reliability in production OBCs.

Is the TO-220 package of IPP65R110CFDAAKSA1 lead (Pb)-free and RoHS compliant?

Yes - the device uses Pb-free plating and halogen-free mold compound, fully complying with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The "green package" designation confirms environmental compliance without performance trade-offs.

IPP65R110CFDAAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R110CFDAAKSA1 FAQ

1.How can I place an order for IPP65R110CFDAAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R110CFDAAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R110CFDAAKSA1 reliable?

The price and inventory of IPP65R110CFDAAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R110CFDAAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R110CFDAAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R110CFDAAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R110CFDAAKSA1?

IPP65R110CFDAAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R110CFDAAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R110CFDAAKSA1?

For technical support, including IPP65R110CFDAAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R110CFDAAKSA1 requirements.

6.How does Aetrix verify that IPP65R110CFDAAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R110CFDAAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R110CFDAAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R110CFDAAKSA1?

All IPP65R110CFDAAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R110CFDAAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R110CFDAAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R110CFDAAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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