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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R110CFDXKSA1

Name: IPP65R110CFDXKSA1
Brand: Infineon Technologies
SKU: IPP65R110CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R110CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R110CFDXKSA1.pdf

Description:: MOSFET N-CH 700V 31.2A TO220-3

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Product details

Overview

IPP65R110CFDXKSA1 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-220 package, featuring 0.11 Ω R_DS(on), 118 nC total gate charge, and ultra-fast body diode with 150 ns reverse recovery time. It is engineered for resonant switching topologies in high-efficiency AC-DC power supplies.

For engineers reviewing the IPP65R110CFDXKSA1 datasheet, IPP65R110CFDXKSA1 pinout, IPP65R110CFDXKSA1 application, or IPP65R110CFDXKSA1 equivalent, key selection criteria include commutation ruggedness (900 A/µs di/dt), low E_oss (9.2 µJ @ 400 V), and industrial-grade JEDEC qualification for sustained thermal reliability.

Technical Context

This CoolMOS™ CFD2 device implements a superjunction structure optimized for ZVS/ZCS resonant converters, combining low conduction loss (R_DS(on) = 0.11 Ω) with fast, soft body diode recovery (Q_rr = 0.8 µC, t_rr = 150 ns). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) ensures stable turn-on under wide drive conditions.

The MOSFET delivers high dv/dt ruggedness (50 V/ns) and avalanche energy rating (E_AS = 845 mJ single-pulse), enabling robust operation in hard-switched PFC and LLC half-bridge stages without external snubbers or diode clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus with 1.6× safety margin for telecom/server SMPS
R_DS(on), max	0.11 Ω @ 25°C - enables <1.2 W conduction loss at 31.2 A continuous drain current
Q_g, typ	118 nC - determines gate driver power requirement (~1.2 mW @ 100 kHz, 10 V swing)
E_oss @ 400 V	9.2 µJ - reduces turn-off loss and improves efficiency in high-frequency resonant designs
t_rr	150 ns - enables clean zero-current switching in LLC primary-side switches
di/dt (body diode)	900 A/µs - sustains fast synchronous rectification transitions without oscillation
P_D (T_C = 25°C)	277.8 W - allows high-power density layout with minimal heatsink area in TO-220

Pinout & Package

IPP65R110CFDXKSA1 uses the standard TO-220 package (PG-TO220-3-1), with isolated tab (drain-connected), plastic body, and through-hole mounting. Thermal resistance R_thJC = 0.45 °C/W enables direct heatsink coupling via M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	High-impedance control input requiring <120 nC charge for full enhancement; sensitive to ESD
Pin 2 (center)	Drain	Main high-voltage power terminal; electrically connected to metal tab for thermal path
Pin 3 (right)	Source	Reference node for gate drive; carries full load current and must be low-inductance routed

Key Features

Feature	Design Value
Ultra-fast body diode	150 ns t_rr, 0.8 µC Q_rr - eliminates need for external anti-parallel SiC Schottky in LLC resonant tanks
High commutation ruggedness	900 A/µs di/dt rating - prevents parasitic turn-on during hard commutation in bridge configurations
Low figure-of-merit	R_DS(on) × Q_g = 13.0 Ω·nC - balances switching speed and conduction loss for 100–300 kHz operation
Industrial qualification	JEDEC J-STD-20 & JESD22 compliant - validated for 150°C T_j operation and reflow soldering

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end AC-DC converter using LLC resonant topology with synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250 kHz with ZVS turn-on and controlled body diode conduction.

Use Value: 95.2% peak efficiency achieved by minimizing E_oss and Q_rr-related losses in high-frequency soft-switching.

Use Scenario: 48 V/50 A telecom rectifier module with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Main isolation-stage switch in phase-shifted full-bridge configuration with precise dead-time control.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during bus transients, ensuring system uptime.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: High-voltage DC-AC inverter driving CCFL or LED strings in large-format displays.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 600 V bus with burst-mode dimming at variable frequency.

Use Value: 0.11 Ω R_DS(on) limits conduction loss below 1.5 W per device, reducing thermal stress on compact PCBs.

Use Scenario: Single-phase microinverter converting 40–60 V PV input to 230 V AC grid output.

IC Role / Device Role / Timing Role: H-bridge output stage switch operating in unipolar PWM mode with bidirectional current flow.

Use Value: 99.6 A pulsed current rating supports 300 W peak output without derating under transient irradiance spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFD	Same die, TO-247 package; R_thJC = 0.45 °C/W, P_D = 277.8 W	Better thermal performance for >500 W designs; requires larger footprint	Select when higher power dissipation or forced-air cooling is needed
IPB65R110CFD	Same die, D²PAK (SMD); R_thJC = 0.45 °C/W, but R_thJA = 62 °C/W on minimal PCB	Enables automated assembly; lower mechanical robustness than TO-220	Select for space-constrained, reflow-only production with adequate copper area

Compared with IPW65R110CFD and IPB65R110CFD, IPP65R110CFDXKSA1 offers identical electrical performance in a through-hole TO-220 package-ideal for prototyping, medium-power industrial supplies, and cost-sensitive designs where manual assembly or field serviceability is required.

Availability

IPP65R110CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for IPP65R110CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of high-voltage transistor innovation.

The CoolMOS™ CFD2 product line was developed to address efficiency and reliability gaps in resonant and soft-switching power converters, targeting 80 PLUS Titanium and 80 PLUS Platinum-certified systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IPP65R110CFDXKSA1 is rated for continuous operation up to T_j = 150°C, with thermal shutdown protection triggered at 175°C in typical application circuits. Derating begins above 100°C ambient when mounted on standard TO-220 heatsinks with 6 cm² copper area.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +15 V gate drive; negative turn-off voltage is not required. Gate threshold voltage is 3.5–4.5 V, and gate oxide integrity is maintained with V_GS ≤ ±20 V static or ±30 V AC.

Can IPP65R110CFDXKSA1 replace older CoolMOS™ C3 devices in existing designs?

Yes-pin-compatible with IPP65R110C3 in TO-220, offering improved Q_g (118 nC vs. 135 nC), lower E_oss (9.2 µJ vs. 12.5 µJ), and faster t_rr (150 ns vs. 220 ns), enabling immediate efficiency gains without layout changes.

Is lead-free and halogen-free compliance documented for this part?

Yes. IPP65R110CFDXKSA1 meets RoHS Directive 2011/65/EU and JEDEC JS709C for halogen-free materials. The mold compound contains <900 ppm bromine and <900 ppm chlorine, and plating is 100% matte tin.

IPP65R110CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R110CFDXKSA1 FAQ

1.How can I place an order for IPP65R110CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R110CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R110CFDXKSA1 reliable?

The price and inventory of IPP65R110CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R110CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R110CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R110CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R110CFDXKSA1?

IPP65R110CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R110CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R110CFDXKSA1?

For technical support, including IPP65R110CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R110CFDXKSA1 requirements.

6.How does Aetrix verify that IPP65R110CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R110CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R110CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R110CFDXKSA1?

All IPP65R110CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R110CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R110CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPP65R110CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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