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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R115CFD7AAKSA1

Name: IPP65R115CFD7AAKSA1
Brand: Infineon Technologies
SKU: IPP65R115CFD7AAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R115CFD7AAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R115CFD7AAKSA1.pdf

Description:: MOSFET N-CH 650V 21A TO220-3

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Product details

Overview

IPP65R115CFD7AAKSA1 from Infineon is a 650 V, 115 mΩ automotive-qualified Superjunction MOSFET in PG-TO220-3 package with integrated fast body diode and ESD protection. It delivers ultra-low Qrr (0.56 µC), low RDS(on)×Qg FOM, and 1300 A/µs diF/dt for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPP65R115CFD7AAKSA1 datasheet, IPP65R115CFD7AAKSA1 pinout, IPP65R115CFD7AAKSA1 application, or IPP65R115CFD7AAKSA1 equivalent, key selection criteria include avalanche-tested ruggedness (97 mJ), 100% AEC-Q101 qualification, and optimized light-load efficiency in bidirectional PFC stages.

Technical Context

This CoolMOS™ CFD7A device uses charge compensation technology to achieve 650 V blocking capability with 115 mΩ RDS(on) at 10 V gate drive and 9.7 A ID. Its integrated fast-recovery body diode (trr = 110 ns, Qrr = 0.56 µC) enables zero-voltage switching in high-frequency resonant topologies without external diode supplementation.

The MOSFET features 120 V/ns dv/dt ruggedness and 70 V/ns reverse diode dv/dt rating, supporting robust operation in noisy high-side switching configurations. Thermal resistance RthJC is 1.10 °C/W, enabling 114 W power dissipation at TC = 25°C with standard heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports DC-link voltages up to 475 V in automotive battery systems with margin for transients.
R_DS(on),max	115 mΩ @ T_j = 150°C - Enables low conduction loss in high-current PFC and DC-DC primary switches.
Q_g,typ	41 nC @ V_DD = 400 V - Low gate charge reduces driver power and enables >300 kHz switching in LLC designs.
E_oss @ 400 V	5.6 µJ - Minimizes turn-off energy loss and improves efficiency in hard-switched and resonant applications.
di_F/dt	1300 A/µs - Sustains fast commutation in synchronous rectification and bidirectional converter modes.
Avalanche Energy E_AS	97 mJ @ I_D = 4.7 A - Guarantees single-pulse ruggedness under inductive load switching stress.
T_j max	150 °C - Rated for continuous operation in under-hood automotive environments with thermal derating.

Pinout & Package

Package: PG-TO220-3 (plastic through-hole, isolated tab). Tab is Drain (Pin 2), Gate is Pin 1, Source is Pin 3. Internal body diode anode connects to Source; cathode to Drain. Integrated ESD diode between Gate and Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V gate drive; 6.0 Ω internal gate resistance limits dV/dt-induced oscillation.
Pin 2 (Drain / Tab)	High-voltage power terminal	Tab serves as Drain connection and thermal path; electrically isolated from mounting surface per PG-TO220 standard.
Pin 3 (Source)	Reference and return path	Connects to power ground or low-side switch node; forms cathode of integrated body diode.

Key Features

Feature	Design Value
Integrated fast body diode	trr = 110 ns, Qrr = 0.56 µC - Eliminates need for external anti-parallel diode in resonant half/full-bridge circuits.
AEC-Q101 qualification	Qualified for automotive powertrain and charging systems - meets stress test requirements including HTGB, HTRB, and temperature cycling.
Low R_DS(on) × E_oss FOM	115 mΩ × 5.6 µJ = 644 mΩ·µJ - Reduces combined conduction and switching losses in 300–700 kHz PFC stages.
100% avalanche tested	Single-pulse E_AS = 97 mJ - Ensures reliability under unclamped inductive switching events in real-world OBC layouts.
ESD protection diode	Integrated G-S clamp diode - Provides ±1 kV HBM ESD immunity without external TVS components.

Applications

On-Board Charger (OBC) Primary Switch

LLC Resonant DC-DC Converter

Use Scenario: High-efficiency 11 kW bi-directional OBC converting AC grid to 400–800 V battery pack.

IC Role / Device Role / Timing Role: Primary-side high-side switch in dual-phase interleaved PFC and full-bridge LLC inverter stage.

Use Value: 1300 A/µs diF/dt and 110 ns trr enable clean ZVS transitions at 350 kHz, reducing switching loss by 22% vs. prior CFD2 generation.

Use Scenario: Isolated 3.3 kW DC-DC stage stepping down 800 V traction battery to 48 V auxiliary bus in BEV platforms.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and primary-side resonant switch in asymmetric half-bridge LLC topology.

Use Value: 115 mΩ RDS(on) and 5.6 µJ Eoss maintain >97.3% peak efficiency across 10–100% load range with minimal heatsink volume.

ZVS Phase-Shift Full-Bridge Inverter

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: 22 kW grid-tied inverter interfacing EV battery with AC mains during V2G discharge mode.

IC Role / Device Role / Timing Role: High-side switch in phase-shift full-bridge with adaptive dead-time control for ZVS across full load range.

Use Value: 120 V/ns dv/dt ruggedness prevents false turn-on during high dV/dt transitions in 600 V bus systems.

Use Scenario: Bidirectional 15 kW DC-DC converter enabling energy exchange between 400 V battery and 48 V mild-hybrid system.

IC Role / Device Role / Timing Role: Main switching element in dual-active-bridge (DAB) topology operating at 200–500 kHz with soft-switching control.

Use Value: Ultra-low Qrr (0.56 µC) cuts reverse recovery loss by 3.8× versus standard SJ MOSFETs, improving light-load efficiency by 1.7%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R190CFD7A	RDS(on) = 190 mΩ, Qg = 27 nC, Eoss = 3.2 µJ - Higher RDS(on) but lower gate charge and output capacitance.	Better suited for higher-frequency (>600 kHz) LLC where conduction loss is secondary to switching loss.	Select when prioritizing Eoss-driven efficiency at light loads over full-load conduction loss.
IPW65R095C7	RDS(on) = 95 mΩ, Qg = 52 nC, Eoss = 7.1 µJ - Lower RDS(on) but higher Qg and Eoss than CFD7A.	Preferred in hard-switched PFC where low RDS(on) dominates total loss budget at 50–100 kHz.	Choose for fixed-frequency boost PFC where gate drive loss is less critical than conduction loss.

Compared with IPP65R190CFD7A and IPW65R095C7, IPP65R115CFD7AAKSA1 uniquely balances RDS(on), Qg, and Eoss for ZVS-resonant topologies requiring both low conduction loss and fast, low-loss body diode recovery - making it optimal for automotive OBC and DAB converters operating at 200–400 kHz.

Availability

IPP65R115CFD7AAKSA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant DC-DC converters, and ZVS phase-shift full-bridge inverters requiring stable component supply with AEC-Q101 compliance and automotive-grade traceability.

Supply support for IPP65R115CFD7AAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD7A product line, engineered specifically for automotive on-board chargers and high-efficiency resonant DC-DC conversion with integrated fast body diode and AEC-Q101 qualification.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current ID is 13 A at TC = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance of 1.10 °C/W and maximum junction temperature of 150°C. Operation above this current requires active cooling or reduced ambient conditions.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes - the integrated body diode has trr = 110 ns, Qrr = 0.56 µC, and diF/dt = 1300 A/µs, enabling reliable synchronous rectification in LLC secondaries up to 400 kHz. Its fast recovery and low stored charge minimize reverse recovery loss and voltage overshoot during commutation.

Does IPP65R115CFD7AAKSA1 require external gate resistors for stability?

Yes - although it includes 6.0 Ω internal gate resistance, external RG (typically 1.8–10 Ω) is required to control turn-on/turn-off speed, suppress ringing, and ensure ZVS timing alignment in resonant topologies. Layout parasitics significantly affect switching behavior, so PCB-level gate loop inductance must be minimized.

How does the CFD7A generation differ from prior CFD2 CoolMOS devices?

CFD7A improves Qrr by 45% (vs. CFD2's 1.02 µC), reduces Eoss by 32% (vs. CFD2's 8.3 µJ), and achieves 15% lower RDS(on)×Qg FOM. It also adds integrated ESD protection and extends diF/dt rating to 1300 A/µs - all while maintaining AEC-Q101 qualification and 650 V VDS rating.

IPP65R115CFD7AAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R115CFD7AAKSA1 FAQ

1.How can I place an order for IPP65R115CFD7AAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R115CFD7AAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R115CFD7AAKSA1 reliable?

The price and inventory of IPP65R115CFD7AAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R115CFD7AAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R115CFD7AAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R115CFD7AAKSA1 transactions.

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4.How is shipping managed for IPP65R115CFD7AAKSA1?

IPP65R115CFD7AAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R115CFD7AAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R115CFD7AAKSA1?

For technical support, including IPP65R115CFD7AAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R115CFD7AAKSA1 requirements.

6.How does Aetrix verify that IPP65R115CFD7AAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R115CFD7AAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R115CFD7AAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R115CFD7AAKSA1?

All IPP65R115CFD7AAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R115CFD7AAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R115CFD7AAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R115CFD7AAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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