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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R145CFD7AAKSA1

Name: IPP65R145CFD7AAKSA1
Brand: Infineon Technologies
SKU: IPP65R145CFD7AAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R145CFD7AAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R145CFD7AAKSA1.pdf

Description:: AUTOMOTIVE_COOLMOS PG-TO220-3

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Product details

Overview

IPP65R145CFD7AAKSA1 from Infineon is a 650 V, 145 mΩ automotive-qualified Superjunction MOSFET in PG-TO220-3 package with integrated fast body diode and 100% avalanche tested. It delivers ultra-low Qrr (0.52 µC), low RDS(on)×Qg FOM, and 1300 A/µs diF/dt for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPP65R145CFD7AAKSA1 datasheet, IPP65R145CFD7AAKSA1 pinout, IPP65R145CFD7AAKSA1 application, or IPP65R145CFD7AAKSA1 equivalent, key selection criteria include its AEC-Q101 qualification, 4.7 µJ Eoss at 400 V, 72 A pulsed drain current, and optimized light-load efficiency in unidirectional/bidirectional battery charging stages.

Technical Context

This CoolMOS™ CFD7A device uses charge compensation technology to achieve high voltage blocking (650 V) with low conduction loss (RDS(on) = 145 mΩ max at Tj = 150°C) and fast switching dynamics. Its integrated body diode features 104 ns trr and 1300 A/µs diF/dt, enabling robust commutation in hard- and soft-switching topologies.

The MOSFET supports gate drive with VGS = ±20 V (static) and ±30 V (pulse), exhibits 36 nC total gate charge, and maintains stable RDS(on) over temperature due to its normalized resistance curve peaking at ~2.2× at 150°C versus 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables operation in 400–475 V battery systems with margin against transients and cosmic radiation effects.
R_DS(on),max	145 mΩ at T_j = 150°C - Defines conduction loss in high-temp PFC and DC-DC stages; impacts thermal design and heatsink sizing.
Q_g,typ	36 nC - Determines gate driver power requirement and influences switching speed control in ZVS circuits.
E_oss @ 400 V	4.7 µJ - Directly affects turn-off energy loss and enables higher-frequency operation in resonant converters.
diF/dt	1300 A/µs - Supports fast reverse recovery in bidirectional DC-DC without oscillation or shoot-through risk.
I_D,pulse	72 A - Specifies peak current capability during transient load steps in on-board charger boost or buck-boost stages.
T_j,max	150 °C - Sets maximum junction temperature limit for reliability validation under continuous 17 A DC operation at T_C = 100°C.

Pinout & Package

Package: PG-TO220-3 (through-hole), with exposed drain tab for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V gate drive to fully enhance channel; requires <8.5 Ω gate resistance for optimal dv/dt control.
Pin 2 (Drain)	High-side power node	Connected to internal drain metallization and external heatsink tab; carries full output current and blocking voltage.
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive loop; must be low-inductance layout to minimize ringing.

Key Features

Feature	Design Value
Integrated fast body diode	trr = 104 ns, Qrr = 0.52 µC - Eliminates need for external anti-parallel diode in LLC half/full-bridge synchronous rectification.
AEC-Q101 qualification	Validated for automotive-grade reliability including 100% single-pulse avalanche testing (EAS = 85 mJ) - Ensures field robustness in OBC environments.
Low RDS(on) × Eoss FOM	145 mΩ × 4.7 µJ = 681.5 mΩ·µJ - Enables >98% efficiency at 100 kHz in 3.3 kW PFC stage with minimal heatsink mass.
High diF/dt rating	1300 A/µs - Allows safe operation in high-di/dt resonant transitions without diode snap-off or voltage overshoot.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Boost PFC front-end operating at 65–100 kHz with 400 V DC bus and 11 kW output.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter.

Use Value: Ultra-low Qrr reduces diode recovery loss by 42% vs. prior CFD6 generation, improving light-load efficiency above 10% load.

Use Scenario: Primary-side switch in 3.3 kW bi-directional LLC converter for vehicle-to-grid (V2G) applications.

IC Role / Device Role / Timing Role: ZVS-capable primary switch enabling zero-voltage turn-on across full load range.

Use Value: 4.7 µJ Eoss allows reliable 200 kHz operation with <1.2 W switching loss per device at 400 V bus.

Bidirectional DC-DC for 48 V/400 V Systems

Industrial EV Charging Power Module

Use Scenario: Dual-active-bridge (DAB) isolation stage linking 48 V auxiliary battery and 400 V traction battery.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in high-frequency isolated DC-DC conversion.

Use Value: 1300 A/µs diF/dt ensures clean commutation during phase-shift transitions, eliminating cross-conduction risk.

Use Scenario: Power stage in liquid-cooled 22 kW AC/DC charging module for commercial EVs.

IC Role / Device Role / Timing Role: Main switching device in interleaved totem-pole PFC + phase-shifted full-bridge topology.

Use Value: AEC-Q101 qualification and 150 °C Tj rating support 24/7 operation with 10-year field life under thermal cycling stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R190CFD7	RDS(on),max = 190 mΩ; Qg = 28 nC; Eoss = 3.6 µJ - Higher conduction loss but lower gate charge and output energy.	Better suited for higher-frequency (>250 kHz) resonant designs where switching loss dominates over conduction loss.	Select when prioritizing Eoss reduction and gate drive simplicity over thermal margin at full load.
IPW65R095C7	RDS(on),max = 95 mΩ; Qg = 52 nC; Eoss = 7.2 µJ - Lower RDS(on) but higher switching losses and no AEC-Q101 qualification.	Targeted at industrial SMPS, not automotive OBC; lacks automotive reliability validation and integrated diode optimization.	Choose only for non-automotive 650 V applications requiring lowest RDS(on); avoid where AEC-Q101 or diF/dt >1000 A/µs is mandatory.

Compared with IPP65R190CFD7 and IPW65R095C7, IPP65R145CFD7AAKSA1 uniquely balances conduction efficiency, soft switching capability, and automotive qualification-making it the only option qualified for AEC-Q101 and optimized for both PFC and LLC in production OBC modules.

Availability

IPP65R145CFD7AAKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and industrial EV charging power modules requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for IPP65R145CFD7AAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global automotive and industrial market leadership.

This part belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive on-board chargers and bidirectional DC-DC converters operating up to 475 V battery systems.

FAQ

Is IPP65R145CFD7AAKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to uncontrolled thermal runaway risk. Designers must ensure the MOSFET operates only in saturation or cutoff regions, with SOA compliance verified per Diagrams 2 and 3.

What is the maximum recommended gate resistor value for ZVS operation?

For reliable ZVS in LLC converters, RG should not exceed 10.2 Ω, as validated in the datasheet's dynamic test conditions (td(off) = 112 ns, tf = 5 ns). Higher values increase turn-off delay and reduce diF/dt margin, risking incomplete soft-switching at light loads. Layout parasitics must also be minimized to maintain effective RG ≤ 12 Ω.

Does the integrated body diode require external snubbing in PFC applications?

No external snubber is required when layout stray inductance is kept below 15 nH. The integrated diode's 1300 A/µs diF/dt and 104 ns trr are designed for snubberless operation in CCM boost PFC. However, PCB layout must use symmetric source routing and minimize loop area between source, gate, and drain to prevent oscillation during recovery.

How does cosmic radiation affect IPP65R145CFD7AAKSA1 in 400 V+ systems?

For blocking voltages >475 V, cosmic radiation-induced single-event burnout (SEB) must be evaluated in early design phase per Infineon's note. At 400 V nominal bus, SEB risk is negligible; however, system-level derating and transient clamping are advised if peak voltage exceeds 475 V during fault conditions or regenerative events.

IPP65R145CFD7AAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 420µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1694 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 98W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R145CFD7AAKSA1 FAQ

1.How can I place an order for IPP65R145CFD7AAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R145CFD7AAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R145CFD7AAKSA1 reliable?

The price and inventory of IPP65R145CFD7AAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R145CFD7AAKSA1 is usually 5 days.

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IPP65R145CFD7AAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IPP65R145CFD7AAKSA1?

For technical support, including IPP65R145CFD7AAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R145CFD7AAKSA1 requirements.

6.How does Aetrix verify that IPP65R145CFD7AAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R145CFD7AAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R145CFD7AAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R145CFD7AAKSA1?

All IPP65R145CFD7AAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R145CFD7AAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R145CFD7AAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R145CFD7AAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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