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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R150CFDXKSA1

Name: IPP65R150CFDXKSA1
Brand: Infineon Technologies
SKU: IPP65R150CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R150CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R150CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 22.4A TO220-3

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Product details

Overview

IPP65R150CFDXKSA1 from Infineon Technologies is a 650 V, 22.4 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-220 package, featuring R_DS(on) = 0.15 Ω (max), Q_g = 86 nC (typ), and E_oss = 6.8 µJ @ 400 V. It integrates an ultra-fast, robust body diode (t_rr = 140 ns, Q_rr = 0.7 µC) and is optimized for resonant switching topologies in server PSUs and telecom rectifiers.

For engineers reviewing the IPP65R150CFDXKSA1 datasheet, IPP65R150CFDXKSA1 pinout, IPP65R150CFDXKSA1 application, or IPP65R150CFDXKSA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, high commutation ruggedness (di/dt = 900 A/µs), and industrial-grade qualification per JEDEC J-STD-20/JESD22.

Technical Context

This CoolMOS™ CFD2 device employs superjunction architecture to achieve simultaneous low conduction loss (R_DS(on) = 0.15 Ω) and low switching loss (E_oss = 6.8 µJ). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) enables reliable turn-on with standard 10 V gate drivers.

The integrated body diode delivers fast reverse recovery (t_rr = 140 ns) and low Q_rr (0.7 µC), enabling hard- and soft-switching operation without external anti-parallel diodes in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in 400 V DC bus applications
R_DS(on)	0.15 Ω max - enables <22.4 A continuous current at T_C = 25°C with <0.75 W conduction loss
Q_g	86 nC typ - determines gate drive energy requirement and switching speed with standard 1.8 Ω driver
E_oss	6.8 µJ @ 400 V - quantifies output capacitance energy loss during zero-voltage switching transitions
t_rr	140 ns - ensures clean commutation in resonant topologies without voltage overshoot or shoot-through risk
di/dt ruggedness	900 A/µs - supports high-frequency ZVS/ZCS operation without parasitic turn-on or latch-up

Pinout & Package

IPP65R150CFDXKSA1 uses the TO-220 package (PG-TO220) with standard three-terminal configuration and isolated mounting hole. Thermal resistance R_thJC = 0.64 °C/W enables efficient heatsink coupling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V gate drive signal; requires ≤1.8 Ω series resistor to damp ringing and limit peak current
Pin 2 (Drain)	High-side switch node	Connected to HV DC bus (up to 650 V); electrically isolated from case; carries full load current during conduction
Pin 3 (Source)	Power return / reference	Serves as common return path for drain current and gate drive loop; must be low-inductance layout to minimize dv/dt noise

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - eliminates need for external SiC/Schottky diode in LLC half-bridge synchronous rectification
High commutation ruggedness	di/dt = 900 A/µs - withstands rapid current reversal in ZVS transitions without failure or oscillation
Low FOM (R_DS(on) × Q_g)	12.9 Ω·nC - reduces combined conduction + switching losses in 100–300 kHz resonant converters
Industrial qualification	JEDEC J-STD-20 (reflow) and JESD22 (HTOL, TC, HAST) - ensures reliability in 150°C junction temperature environments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with ZVS; body diode conducts freewheeling current during dead time.

Use Value: Enables >96% efficiency at full load by minimizing E_oss and Q_rr-related losses while maintaining stable t_rr across temperature.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier with 380 V DC input.

IC Role / Device Role / Timing Role: Main switch handling 20 A RMS current; body diode recovers during complementary switching transitions.

Use Value: Delivers 95.2% peak efficiency and passes 1000-cycle thermal cycling due to robust di/dt rating and low R_DS(on).

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Half-bridge primary switch in resonant inverter driving CCFL or LED backlight with 300–400 V bus.

IC Role / Device Role / Timing Role: Fast-switching power transistor with precise dead-time control; body diode handles reverse recovery during PWM edge transitions.

Use Value: Reduces audible noise and EMI by eliminating diode ring-out; maintains <1% THD under dimming modulation.

Use Scenario: DC-DC boost stage in 300 W microinverter interfacing PV panel to 24 V battery storage.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in interleaved boost converter; operates at 150 kHz with bidirectional current capability.

Use Value: Achieves >98.1% conversion efficiency at 200 W output by leveraging low Q_g and fast t_rr to reduce switching transition losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R150CFD	TO-247 package; R_thJC = 0.64 °C/W; same electrical specs	Better thermal performance in high-power (>500 W) forced-air cooled designs	Select when board space allows larger package and thermal budget demands lower junction rise
IPA65R150CFD	I²PAK (TO-262) package; identical R_DS(on), Q_g, and diode specs	Improved creepage/clearance vs. TO-220; suited for safety-critical lighting and industrial AC-DC	Prefer for UL/EN60950-1 certified designs requiring ≥5 mm creepage distance

Compared with IPW65R150CFD and IPA65R150CFD, IPP65R150CFDXKSA1 offers optimal cost-to-performance ratio in space-constrained TO-220-based server and telecom PSUs where thermal management is achieved via direct heatsink mounting.

Availability

IPP65R150CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply and long-term industrial-grade availability.

Supply support for IPP65R150CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD2 product line, engineered specifically for high-efficiency resonant and soft-switching power conversion in industrial and multimarket applications.

FAQ

What is the maximum continuous drain current for IPP65R150CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 14.2 A at T_C = 100°C, derated from 22.4 A at 25°C per the thermal limit defined by R_thJC = 0.64 °C/W and P_D = 195.3 W. This value assumes proper heatsinking and ambient conditions compliant with JEDEC industrial standards.

Does IPP65R150CFDXKSA1 require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage of 3.5–4.5 V and is fully enhanced with 0 V gate-source bias. A gate drive range of 0 V to 10 V is sufficient; applying negative voltage is unnecessary and not specified in the datasheet for reliable operation.

Can IPP65R150CFDXKSA1 replace standard silicon MOSFETs in existing 650 V designs without layout changes?

Yes - it uses the industry-standard TO-220 footprint and pinout (G-D-S), allowing drop-in replacement in most layouts. However, gate drive strength must be verified: its 86 nC Q_g requires ≥1 A peak drive capability to maintain intended switching speed and avoid excessive Miller-induced turn-on.

Is the body diode in IPP65R150CFDXKSA1 suitable for synchronous rectification?

Yes. Its body diode features t_rr = 140 ns and Q_rr = 0.7 µC, enabling use in synchronous rectification within LLC and phase-shifted topologies without external diode supplementation, provided gate timing avoids shoot-through and dead time is optimized per application.

IPP65R150CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R150CFDXKSA1 FAQ

1.How can I place an order for IPP65R150CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R150CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R150CFDXKSA1 reliable?

The price and inventory of IPP65R150CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R150CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R150CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R150CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R150CFDXKSA1?

IPP65R150CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R150CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R150CFDXKSA1?

For technical support, including IPP65R150CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R150CFDXKSA1 requirements.

6.How does Aetrix verify that IPP65R150CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R150CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R150CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R150CFDXKSA1?

All IPP65R150CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R150CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R150CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPP65R150CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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