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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R150CFDXKSA2

Name: IPP65R150CFDXKSA2
Brand: Infineon Technologies
SKU: IPP65R150CFDXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R150CFDXKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R150CFDXKSA2.pdf

Description:: MOSFET N-CH 650V 22.4A TO220-3

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Product details

Overview

IPP65R150CFDXKSA2 from Infineon Technologies is a 650 V, 22.4 A (T_C = 100 °C), 0.15 Ω R_DS(on) CoolMOS™ CFD2 superjunction power MOSFET in TO-220 package, featuring ultra-fast body diode (t_rr = 140 ns, Q_rr = 0.7 µC), high commutation ruggedness (di/dt = 900 A/µs), and low E_oss (6.8 µJ @ 400 V), optimized for resonant LLC and ZVS-PWM stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPP65R150CFDXKSA2 datasheet, IPP65R150CFDXKSA2 pinout, IPP65R150CFDXKSA2 application, or IPP65R150CFDXKSA2 equivalent, key selection criteria include R_DS(on)-Q_g figure-of-merit (0.15 Ω × 86 nC), body diode robustness under hard commutation, thermal resistance (R_thJC = 0.64 °C/W), gate drive simplicity (V_GS(th) = 3.5–4.5 V), and industrial-grade JEDEC qualification.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture with charge compensation trenches, enabling simultaneous reduction of conduction loss (R_DS(on) = 0.15 Ω max) and switching loss (E_oss = 6.8 µJ @ 400 V). Its body diode is engineered for soft reverse recovery and high di/dt tolerance (900 A/µs), eliminating need for external snubbers in resonant topologies.

The MOSFET operates with standard 10 V gate drive (V_GS = 10 V), exhibits low gate resistance (R_G = 1.5 Ω), and supports fast switching (t_on-delay = 12.4 ns, t_off-delay = 52.8 ns) while maintaining dv/dt ruggedness up to 50 V/ns - critical for reliable operation in high-frequency half-bridge and full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, server PSUs).
R_DS(on),max	0.15 Ω @ T_J = 25 °C - enables low conduction loss at 14 A continuous drain current (T_C = 100 °C).
Q_g,typ	86 nC - determines gate drive energy requirement; compatible with standard 1-A peak gate drivers at ≤300 kHz.
E_oss@400V	6.8 µJ - reduces turn-on loss in ZVS circuits; directly lowers dead-time sensitivity and improves efficiency above 100 kHz.
t_rr	140 ns - ultra-fast body diode recovery minimizes voltage overshoot and ringing during hard commutation in LLC resonant converters.
R_thJC	0.64 °C/W - junction-to-case thermal resistance enables 195.3 W power dissipation at T_C = 25 °C in TO-220 package.
I_D,pulse	72 A - supports short-duration overload conditions in UPS and solar string inverters without thermal runaway.

Pinout & Package

IPP65R150CFDXKSA2 is housed in a TO-220 package (PG-TO220) with isolated mounting tab (drain-connected), standardized for through-hole PCB assembly and heatsink mounting. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 0–10 V logic-level signal; low R_G (1.5 Ω) ensures fast edge control and minimal gate oscillation.
Pin 2 (Drain)	High-voltage output terminal	Internally connected to heatsink tab; must be electrically isolated from chassis unless system design permits common-drain configuration.
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; requires low-inductance layout to preserve switching integrity.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC, I_rrm = 8.8 A - enables zero-voltage switching in LLC without external diode clamping.
High commutation ruggedness	di/dt = 900 A/µs - withstands abrupt current reversal in phase-shifted full-bridge without failure or parametric shift.
Low R_DS(on) × Q_g FOM	0.15 Ω × 86 nC = 12.9 Ω·nC - balances conduction and switching loss for optimal efficiency at 100–300 kHz.
Industrial-grade qualification	JEDEC J-STD-020 & JESD22 compliant - validated for 150 °C operating temperature and long-term reliability in 24/7 infrastructure equipment.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets IPC-J-STD-609A Class 1 and EU Directive 2015/863.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server rack PSU.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge configuration; operates at 250 kHz with ZVS turn-on enabled by body diode soft recovery.

Use Value: Reduces total switching loss by 22% vs. first-gen CoolMOS™, lowering heatsink size by 35% while maintaining 96.2% peak efficiency.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier.

IC Role / Device Role / Timing Role: Main power switch handling 40 A RMS output current; subjected to repetitive hard commutation during PWM dead-time transitions.

Use Value: Eliminates need for external RC snubbers due to 900 A/µs di/dt rating and 50 V/ns dv/dt ruggedness, simplifying BOM and improving MTBF.

Solar String Inverter

Industrial LED Driver

Use Scenario: DC-DC isolation stage in 10 kW string inverter converting 1000 V PV input to 400 V DC link.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in active clamp flyback; conducts bidirectional current during resonance.

Use Value: Body diode conduction during light-load conditions delivers 0.9 V V_F at 14 A (25 °C), reducing conduction loss by 40% vs. discrete Schottky solution.

Use Scenario: High-efficiency constant-current buck-boost driver for 200 W UV-C LED arrays in sterilization systems.

IC Role / Device Role / Timing Role: Primary switch in high-frequency (≥200 kHz) buck-boost topology operating at 85 °C ambient with forced air cooling.

Use Value: Low E_oss (6.8 µJ) and fast t_fall (5.6 ns) minimize switching loss at high duty cycles, enabling >94% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R150CFD	Same die, TO-247 package; R_thJC = 0.64 °C/W, P_tot = 195.3 W @ T_C = 25 °C.	Better thermal performance for high-power (>2 kW) open-frame designs requiring direct heatsink mounting.	Select when board space allows TO-247 and thermal budget demands <0.5 °C/W junction-to-heatsink path.
IPA65R150CFD	Same die, TO-220 FullPAK package; R_thJC = 3.6 °C/W, P_tot = 34.7 W @ T_C = 25 °C.	Optimized for compact, cost-sensitive consumer lighting where SMT assembly and lower power (<500 W) apply.	Select only for low-power, surface-mount implementations with strict height constraints and no forced cooling.

Compared with IPW65R150CFD and IPA65R150CFD, IPP65R150CFDXKSA2 delivers the optimal balance of thermal capability (0.64 °C/W), through-hole manufacturability, and cost for mid-power (500–2000 W) industrial and telecom power supplies - avoiding TO-247 mechanical complexity and FullPAK thermal limitation.

Availability

IPP65R150CFDXKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPP65R150CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The CoolMOS™ CFD2 product line was developed to address efficiency and reliability gaps in high-frequency resonant converters, targeting server, telecom, and renewable energy applications demanding >96% efficiency and >10-year field life.

FAQ

What is the maximum continuous drain current for IPP65R150CFDXKSA2 at 100 °C case temperature?

The maximum continuous drain current is 14.2 A at T_C = 100 °C, derated from 22.4 A at T_C = 25 °C per the datasheet's thermal limit curve. This value reflects safe operation under steady-state conduction with proper heatsinking and accounts for R_DS(on) increase to 0.351 Ω at 150 °C junction temperature.

Does IPP65R150CFDXKSA2 require negative gate voltage for reliable turn-off?

No. The device features a positive-threshold gate structure with V_GS(th) = 3.5–4.5 V and is fully compatible with 0 V to 10 V gate drive. A negative gate voltage is not required or recommended; standard 12 V logic-level drivers (e.g., 1EDN7512B) provide sufficient margin against spurious turn-on.

Can IPP65R150CFDXKSA2 replace older CoolMOS™ CFD1 devices in existing designs?

Yes - it is a direct drop-in replacement for IPP65R150CFD (CFD1) with identical pinout, R_DS(on), and gate characteristics, but adds improved body diode softness (t_rr reduced from 220 ns to 140 ns) and higher di/dt ruggedness (900 A/µs vs. 600 A/µs), enabling immediate efficiency gains without layout changes.

What is the avalanche energy rating for single-pulse operation?

The single-pulse avalanche energy rating is 614 mJ at I_D = 4.5 A and V_DS = 50 V, measured under controlled test conditions. This rating supports limited unclamped inductive switching events but does not replace proper snubber or clamp circuit design in production systems.

IPP65R150CFDXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R150CFDXKSA2 FAQ

1.How can I place an order for IPP65R150CFDXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R150CFDXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R150CFDXKSA2 reliable?

The price and inventory of IPP65R150CFDXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R150CFDXKSA2 is usually 5 days.

3.What payment methods are accepted for IPP65R150CFDXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R150CFDXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R150CFDXKSA2?

IPP65R150CFDXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R150CFDXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R150CFDXKSA2?

For technical support, including IPP65R150CFDXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R150CFDXKSA2 requirements.

6.How does Aetrix verify that IPP65R150CFDXKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP65R150CFDXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R150CFDXKSA2 meets industry standards.

7.What is the process for return or replacement of IPP65R150CFDXKSA2?

All IPP65R150CFDXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R150CFDXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R150CFDXKSA2 part is unused and in its original packaging.

Return procedure for IPP65R150CFDXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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