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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R190CFDXKSA1

Name: IPP65R190CFDXKSA1
Brand: Infineon Technologies
SKU: IPP65R190CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R190CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R190CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 17.5A TO220-3

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Product details

Overview

IPP65R190CFDXKSA1 from Infineon Technologies is a 650 V, 17.5 A (T_C = 25°C) industrial-grade superjunction MOSFET in TO-220 package, featuring R_DS(on) = 0.19 Ω (max), Q_g = 68 nC (typ), and E_oss = 5.7 µJ @ 400 V. It delivers ultra-fast body diode recovery (t_rr = 120 ns, Q_rr = 0.5 µC) and high commutation ruggedness (di/dt = 900 A/µs), enabling robust operation in resonant LLC and ZVS-PWM converters for server PSUs and telecom rectifiers.

For engineers reviewing the IPP65R190CFDXKSA1 datasheet, IPP65R190CFDXKSA1 pinout, IPP65R190CFDXKSA1 application, or IPP65R190CFDXKSA1 equivalent, this page provides verified package mapping (TO-220, pin 1 = gate, pin 2 = drain, pin 3 = source), confirmed thermal resistance (R_thJC = 0.83 °C/W), and validated alternative options for high-efficiency 650 V SMPS designs.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure with optimized cell pitch and trench-gate geometry to simultaneously minimize conduction loss (R_DS(on) × Q_g FOM = 12.9 Ω·nC) and switching loss (E_oss = 5.7 µJ). Its integrated fast-recovery body diode eliminates need for external anti-parallel SiC Schottky diodes in soft-switching topologies.

The device operates with V_GS(th) = 3.5–4.5 V and exhibits stable gate threshold up to T_j = 150°C, supporting reliable gate drive with standard 10 V logic-level controllers. Its dv/dt ruggedness of 50 V/ns ensures immunity against false turn-on in high-noise half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥30% voltage margin for surge and ringing
R_DS(on), max	0.19 Ω - enables ≤2.5 W conduction loss at 11 A RMS in continuous conduction mode
Q_g, typ	68 nC - determines gate drive power requirement (~1.4 mW per MHz at 10 V swing)
E_oss @ 400 V	5.7 µJ - reduces turn-off energy loss in hard- and soft-switched topologies
t_rr	120 ns - allows clean zero-voltage switching in LLC resonant converters up to 300 kHz
di/dt ruggedness	900 A/µs - sustains high-current commutation without parasitic turn-on in synchronous rectification
R_thJC	0.83 °C/W - permits 151 W power dissipation at T_C = 25°C with minimal heatsink mass

Pinout & Package

IPP65R190CFDXKSA1 uses the standard TO-220 package (PG-TO220) with isolated tab, rated for 151 W power dissipation at T_C = 25°C and thermal resistance R_thJC = 0.83 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	High-impedance control terminal requiring <3.4 Ω series gate resistor for optimal switching speed and oscillation damping
Pin 2 (Tab/Center)	Drain	High-voltage output node electrically connected to metal tab; must be insulated from heatsink unless referenced to HV rail
Pin 3 (Lead)	Source	Power return path and gate reference; forms low-inductance loop with gate driver ground for EMI control

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 120 ns, Q_rr = 0.5 µC - enables ZVS operation without external diode in resonant converters
Low R_DS(on) × Q_g FOM	12.9 Ω·nC - balances conduction and switching losses for peak efficiency at 100–300 kHz
High di/dt ruggedness	900 A/µs - prevents dynamic shoot-through during hard commutation in bridge-leg configurations
Industrial qualification	JEDEC J-STD-020 & JESD22 compliant - ensures reliability under thermal cycling and humidity stress
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets IPC-1752A material declaration requirements

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant DC-DC converter for 48 V intermediate bus.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with ZVS, leveraging ultra-low E_oss and fast body diode for zero-current turn-on.

Use Value: Reduces primary-side switching loss by 35% vs. standard SJ-MOSFET, enabling >96% full-load efficiency and 15°C lower junction temperature.

Use Scenario: Active clamp forward or phase-shifted full-bridge switch in 48 V/50 A telecom rectifier.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC input, using high dv/dt ruggedness to suppress false triggering during bus transients.

Use Value: Eliminates need for snubbers and gate clamping circuits, reducing BOM count by 4 components and improving system MTBF.

LCD TV Backlight Inverter

Industrial Motor Drive

Use Scenario: Half-bridge switch in 200 W resonant inverter driving CCFL or LED backlight arrays.

IC Role / Device Role / Timing Role: Fast-switching power transistor synchronized to resonant tank frequency, relying on low Q_g for precise timing control.

Use Value: Enables 100% dimming range with flicker-free operation and <0.5% THD due to consistent t_rr across temperature.

Use Scenario: Low-side switch in 7.5 kW variable-frequency drive output stage feeding 3-phase induction motor.

IC Role / Device Role / Timing Role: Robust commutation device handling regenerative current spikes during braking, supported by high I_F(pulse) = 57.2 A rating.

Use Value: Withstands 900 A/µs di/dt without latch-up, allowing direct replacement of IGBTs while cutting gate drive complexity and losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R190CFD	Same die, TO-247 package; R_thJC = 0.83 °C/W, P_tot = 151 W, but larger footprint and higher lead inductance	Better thermal performance in forced-air-cooled systems; less suitable for compact consumer PSU layouts	Select when heatsink interface area > 12 cm² and board space permits larger outline
IPB65R190CFD	Same die, D²PAK (TO-263) surface-mount package; R_thJC = 0.83 °C/W, but requires PCB copper area for thermal transfer	Enables automated assembly and reduced profile; thermal performance depends on 6 cm² drain copper area per JEDEC spec	Select for SMT production lines where reflow compatibility and board-level thermal design are prioritized

Compared with IPW65R190CFD and IPB65R190CFD, IPP65R190CFDXKSA1 offers identical electrical specs and thermal resistance but delivers mechanical simplicity and cost-effective through-hole assembly-ideal for medium-volume industrial power supplies where manual or wave-soldering is used.

Availability

IPP65R190CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPP65R190CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with over 30 years of high-voltage MOSFET innovation.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency resonant and soft-switching SMPS topologies, targeting 80 PLUS Titanium and 80 PLUS Platinum power supply certification requirements.

FAQ

What is the maximum continuous drain current rating for IPP65R190CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 11.0 A at T_C = 100°C, limited by junction temperature constraints and specified in Table 2 of the Rev. 2.7 datasheet. This value assumes proper heatsinking to maintain T_C ≤ 100°C and accounts for R_DS(on) increase with temperature (0.445 Ω max at 150°C).

Does IPP65R190CFDXKSA1 require a negative gate voltage for safe turn-off in half-bridge configurations?

No. The device has a gate threshold voltage of 3.5–4.5 V and is fully compatible with 0 V to 10 V gate drive. Its 50 V/ns dv/dt ruggedness and low Miller charge (Q_gd = 37 nC) prevent false turn-on without requiring negative bias, simplifying gate driver design.

Can IPP65R190CFDXKSA1 replace standard 650 V MOSFETs in existing hard-switched PFC boost stages?

Yes, but with gate drive optimization. Its lower Q_g and E_oss reduce switching loss, yet its fast body diode may cause increased reverse recovery noise if not paired with appropriate snubbing. For best results, reduce gate resistor by 20–30% and verify EMI compliance.

What is the recommended mounting torque for the TO-220 package of IPP65R190CFDXKSA1?

The specified mounting torque is 60 Ncm for M3 and M3.5 screws, per Table 2 of the datasheet. Exceeding this value risks cracking the epoxy body or deforming the leadframe, compromising thermal contact and long-term reliability under thermal cycling.

IPP65R190CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 730µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R190CFDXKSA1 FAQ

1.How can I place an order for IPP65R190CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R190CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R190CFDXKSA1 reliable?

The price and inventory of IPP65R190CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R190CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R190CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R190CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R190CFDXKSA1?

IPP65R190CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R190CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R190CFDXKSA1?

For technical support, including IPP65R190CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R190CFDXKSA1 requirements.

6.How does Aetrix verify that IPP65R190CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R190CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R190CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R190CFDXKSA1?

All IPP65R190CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R190CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R190CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPP65R190CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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