Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R225C7XKSA1

Name: IPP65R225C7XKSA1
Brand: Infineon Technologies
SKU: IPP65R225C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP65R225C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R225C7XKSA1.pdf

Description:: MOSFET N-CH 650V 11A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:160

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP65R225C7XKSA1 from Infineon Technologies is a 650 V, 225 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard-switching and PFC stages. It delivers 41 A pulsed drain current, 20 nC total gate charge, and 2.3 µJ output switching energy at 400 V, enabling high-frequency operation in server and telecom power supplies.

For engineers reviewing the IPP65R225C7XKSA1 datasheet, IPP65R225C7XKSA1 pinout, IPP65R225C7XKSA1 application, or IPP65R225C7XKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, dv/dt ruggedness (100 V/ns), body diode dI/dt rating (55 A/µs), and TO-220 tab-drain thermal performance.

Technical Context

This device implements Infineon's superjunction architecture with optimized charge balancing for reduced conduction and switching losses. Its 225 mΩ R_DS(on) at 10 V V_GS and 20 nC Q_g support high-efficiency operation up to 100 kHz in continuous conduction mode PFC.

The MOSFET features enhanced dv/dt immunity (100 V/ns) and robust unclamped inductive switching capability (48 mJ E_AS). Its body diode exhibits 890 ns reverse recovery time and 6 µC Q_rr under 400 V, 11 A conditions-critical for minimizing commutation loss in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V maximum blocking voltage - supports 400 V DC bus designs with 1.6× safety margin
R_DS(on)	225 mΩ max at T_j = 150°C - enables low conduction loss in high-current PFC legs
Q_g	20 nC typical - reduces gate drive power and simplifies driver selection for 65–100 kHz operation
E_oss	2.3 µJ at 400 V - lowers turn-off loss and improves efficiency in hard-switched converters
dV/dt ruggedness	100 V/ns - prevents spurious turn-on during fast voltage transients in high-side switch positions
Body diode dI/dt	55 A/µs - sustains controlled commutation without oscillation in synchronous rectification or LLC resonant circuits

Pinout & Package

Package: PG-TO220 with isolated tab (Drain-connected). Standard through-hole mounting with M3/M3.5 screw torque specification (60 Ncm).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	High-impedance control input requiring <1.2 Ω series resistance to suppress ringing
Pin 2 (Tab)	Drain	Electrically connected to metal tab - must be insulated from heatsink unless referenced to high-voltage rail
Pin 3 (Lead)	Source	Power return path and gate reference node - layout critical for low-inductance source loop

Key Features

Feature	Design Value
Superjunction R_DS(on) × E_oss FOM	Best-in-class trade-off enabling >96% efficiency in 3.3 kW server PFC at 70 kHz
Enhanced dv/dt immunity	100 V/ns rating eliminates need for external gate clamping in most industrial topologies
Industrial-grade qualification	JEDEC J-STD-20/JESD22 compliant - validated for 150°C continuous junction operation
Low Q_gd/Q_g ratio	6 nC/20 nC = 0.3 - improves Miller immunity and reduces risk of false turn-on during switching

Applications

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Continuous conduction mode (CCM) boost PFC front-end in 2–3 kW rack-mounted servers.

IC Role / Device Role / Timing Role: High-side switching element handling 11 A RMS input current at 70 kHz switching frequency.

Use Value: 225 mΩ R_DS(on) and 2.3 µJ E_oss reduce total losses by 1.8 W vs. prior-gen C6 devices, lowering heatsink requirements.

Use Scenario: 48 V output telecom rectifier with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switch operating at 100 kHz with 400 V DC bus and 55 A peak current.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during bus transients caused by load dumps or cable inductance.

Solar Inverter DC-DC Stage

UPS Inverter Half-Bridge

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V PV input to 400 V intermediate bus.

IC Role / Device Role / Timing Role: High-voltage switch in dual-active-bridge (DAB) configuration with soft-switching constraints.

Use Value: Low Q_gd (6 nC) and 5.4 V gate plateau enable precise zero-voltage switching timing control across wide load range.

Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean 230 V AC.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge driving transformer primary with 50 Hz fundamental + 10 kHz carrier.

Use Value: 55 A/µs body diode dI/dt rating ensures reliable freewheeling during dead-time without voltage overshoot or shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R190C7	Lower R_DS(on) (190 mΩ), higher Q_g (23 nC), same package	Better conduction loss at cost of increased gate drive loss above 80 kHz	Select when thermal budget favors lower R_DS(on) over switching frequency headroom
IPW65R095C7	95 mΩ R_DS(on), 37 nC Q_g, TO-247 package	Higher current capability but requires larger PCB footprint and heatsink	Choose for >5 kW systems where conduction loss dominates and board space permits TO-247

Compared with IPP65R190C7 and IPW65R095C7, IPP65R225C7 offers optimal balance of gate drive simplicity, thermal performance in TO-220, and system-level efficiency in 2–4 kW PFC and inverter stages - making it preferred for space-constrained telecom and server platforms.

Availability

IPP65R225C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar DC-DC converters, and UPS inverters requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IPP65R225C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C7 product line targets high-efficiency, high-power-density AC-DC and DC-DC conversion in data center, telecom, and renewable energy systems - emphasizing low R_DS(on) × Q_g and robust hard-switching behavior.

FAQ

What is the maximum continuous drain current for IPP65R225C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 7 A at T_C = 100°C, limited by junction temperature (T_j ≤ 150°C) and thermal resistance R_thJC = 1.99 °C/W. This value assumes proper heatsinking and 60 Ncm mounting torque on the TO-220 tab.

Does IPP65R225C7XKSA1 have an integrated body diode, and what are its key recovery parameters?

Yes, it features a fast-recovery epitaxial body diode with 890 ns reverse recovery time (t_rr), 6 µC reverse recovery charge (Q_rr), and 16 A peak reverse recovery current (I_RRM) at 400 V, 11 A, and 55 A/µs di/dt - verified per datasheet Table 7.

Can IPP65R225C7XKSA1 be paralleled with identical units, and what layout guidance applies?

Yes, parallel operation is supported but requires individual gate resistors and ferrite beads on each gate lead to suppress oscillation. The datasheet recommends separate totem-pole drivers or gate resistors ≥10 Ω per device to ensure current sharing stability under dynamic load conditions.

What is the gate threshold voltage range, and how does it impact drive circuit design?

V_GS(th) ranges from 3.0 V to 4.0 V at T_j = 25°C (Table 4). This tight threshold enables reliable turn-on with 10 V gate drive while maintaining noise immunity - no negative gate bias is required, simplifying driver design versus older MOSFET families.

IPP65R225C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 225mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 996 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R225C7XKSA1 FAQ

1.How can I place an order for IPP65R225C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R225C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R225C7XKSA1 reliable?

The price and inventory of IPP65R225C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R225C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R225C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R225C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R225C7XKSA1?

IPP65R225C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R225C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R225C7XKSA1?

For technical support, including IPP65R225C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R225C7XKSA1 requirements.

6.How does Aetrix verify that IPP65R225C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R225C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R225C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R225C7XKSA1?

All IPP65R225C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R225C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R225C7XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R225C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…