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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R280E6XKSA1

Name: IPP65R280E6XKSA1
Brand: Infineon Technologies
SKU: IPP65R280E6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R280E6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R280E6XKSA1.pdf

Description:: MOSFET N-CH 650V 13.8A TO220-3

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Product details

Overview

IPP65R280E6XKSA1 from Infineon Technologies is a 650 V, 280 mΩ CoolMOS™ E6 superjunction power MOSFET in TO-220FP package, rated for 14 A continuous drain current at 25°C, featuring ultra-low gate charge (Q_g = 27 nC), low output charge (Q_oss = 49 nC), and optimized for high-efficiency SMPS, PFC, and industrial AC-DC converters operating up to 100 kHz.

For engineers reviewing the IPP65R280E6XKSA1 datasheet, IPP65R280E6XKSA1 pinout, IPP65R280E6XKSA1 application, or IPP65R280E6XKSA1 equivalent, this device is selected for high-voltage switching where conduction loss minimization, fast turn-on/turn-off timing, and thermal robustness in compact through-hole packages are critical design requirements.

Technical Context

This CoolMOS™ E6 device employs charge compensation technology with field-stop layer and optimized cell pitch to achieve superior R_DS(on) × Q_g figure-of-merit (FOM) of 7.56 Ω·nC. Its gate threshold voltage (V_GS(th)) is tightly specified at 3.0–4.5 V, enabling reliable drive with standard 12 V gate drivers while maintaining noise immunity.

The MOSFET features a fully avalanche-rated structure (E_AS = 310 mJ), integrated body diode with soft reverse recovery (t_rr = 150 ns, Q_rr = 1.2 µC), and enhanced dV/dt ruggedness (>4.5 kV/µs) - all validated under hard-switching conditions per JEDEC JESD47.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage suitable for universal-input (85–265 VAC) offline SMPS and 400 VDC bus applications.
R_DS(on) max	280 mΩ @ T_j = 25°C - Low conduction loss enables high efficiency at 10–20 A load currents without forced cooling.
I_D cont	14 A @ T_c = 25°C - Continuous current rating supports 150–200 W power stages in TO-220FP mounting configuration.
Q_g	27 nC - Enables fast, low-loss switching with minimal gate driver power demand (e.g., 1–2 W at 100 kHz).
E_AS	310 mJ - Fully rated single-pulse avalanche energy allows operation without snubbers in inductive switching circuits.
t_r/t_f	12 ns / 23 ns - Fast switching transitions reduce overlap losses and support higher-frequency designs up to 150 kHz.
R_thJC	1.2 K/W - Thermal resistance from junction to case enables 30–35 W dissipation with modest heatsinking (e.g., 25 cm² aluminum fin).

Pinout & Package

Package: TO-220FP (Full-Pak), isolated tab, vertical mounting, screw-down compatible. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	High-impedance input requiring <27 nC charge for full enhancement; compatible with standard PWM controllers (e.g., UC384x, ICE2PCS01).
Pin 2 (Drain)	High-side power terminal	Internally connected to metal tab; electrically isolated from package mount surface but thermally coupled - requires insulating washer when mounted to heatsink.
Pin 3 (Source)	Reference and return path	Low-inductance source connection essential for stable gate drive; recommended layout: short trace between source pin and driver ground return.

Key Features

Feature	Design Value
Ultra-low Q_g/Q_oss ratio	27 nC / 49 nC - Reduces switching loss disproportionately vs. conduction loss, optimizing total power loss across 40–120 kHz range.
Enhanced dV/dt ruggedness	>4.5 kV/µs - Eliminates false triggering during fast voltage transients in bridge-leg configurations without external gate clamping.
Soft-recovery body diode	Q_rr = 1.2 µC, t_rr = 150 ns - Minimizes voltage overshoot and EMI in discontinuous conduction mode (DCM) PFC and LLC resonant converters.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 - Supports lead-free reflow assembly and environmental compliance for industrial and consumer end equipment.
Qualified per JEDEC JESD47	1000-hour HTRB, 1000-cycle HTSL - Validated reliability for 10+ year field life in telecom and server PSU applications.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW server power supply operating at 70–100 kHz.

IC Role / Device Role: High-voltage hard-switched MOSFET in asymmetric half-bridge topology handling 400 VDC bus and peak currents up to 22 A.

Use Value: 280 mΩ R_DS(on) and 27 nC Q_g jointly reduce total losses by 1.8 W vs. previous-generation CoolMOS™ C7, improving full-load efficiency from 96.2% to 96.5%.

Use Scenario: Boost switch in 3.3 kW industrial motor drive front-end with active PFC stage.

IC Role / Device Role: Unidirectional switching element in continuous conduction mode (CCM) boost converter, switching at 65 kHz with 12 A RMS current.

Use Value: Soft-recovery body diode limits reverse recovery spike to <120 V, reducing snubber losses and enabling direct replacement of SiC diodes in cost-sensitive designs.

LED Streetlight Driver

EV Charger Auxiliary Supply

Use Scenario: Primary switch in 200 W outdoor LED driver with universal AC input and passive cooling.

IC Role / Device Role: Flyback converter switch operating at 60 kHz with 100% duty cycle margin and 85°C ambient temperature.

Use Value: R_thJC = 1.2 K/W allows full 14 A rating with only 15 cm² heatsink, eliminating fan requirement and extending MTBF beyond 100,000 hours.

Use Scenario: DC-DC converter primary switch in 300 V auxiliary power supply for 11 kW on-board EV charger.

IC Role / Device Role: Forward converter switch handling 350 V bus, 15 A peak, and repetitive unclamped inductive switching events.

Use Value: 310 mJ E_AS rating ensures no failure under worst-case transformer saturation, removing need for overvoltage clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 55 mΩ higher (335 mΩ), Q_g = 38 nC - 41% higher switching loss at 100 kHz.	Requires larger heatsink and gate driver; not qualified for >85°C ambient in sealed enclosures.	Select only if legacy STMicro design reuse is mandatory and efficiency targets allow ≥0.3% penalty.
IXFH30N65X2	Higher R_DS(on) (330 mΩ), slower t_r/t_f (25/45 ns), no soft diode - increases EMI filtering burden.	Limited to <60 kHz operation due to higher switching loss; unsuitable for DCM PFC or high-density layouts.	Prefer only for retrofit into existing IXYS-based designs where board space prevents layout revision.

Compared with STP65N6F6 and IXFH30N65X2, IPP65R280E6XKSA1 delivers the lowest R_DS(on) × Q_g FOM in its class, enabling higher power density, lower thermal stress, and reduced EMI - making it the optimal choice for new designs targeting 96%+ efficiency above 100 W.

Availability

IPP65R280E6XKSA1 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, LED streetlight drivers, and EV auxiliary supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IPP65R280E6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with >50 years of silicon innovation and global manufacturing scale.

This part belongs to the CoolMOS™ E6 product line, engineered specifically for high-efficiency, high-power-density offline SMPS and industrial power conversion where low R_DS(on), fast switching, and ruggedness are non-negotiable.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of 10–22 Ω is recommended to balance switching speed and ringing suppression. With Q_g = 27 nC and typical driver peak current of 2 A, this yields ~15 ns rise time - sufficient to minimize overlap loss while avoiding parasitic oscillation in PCB layouts with <5 nH source inductance.

Can IPP65R280E6XKSA1 replace IPP65R380E6 in an existing design?

Yes - it is a direct drop-in upgrade: identical TO-220FP package, same pinout, and lower R_DS(on) (280 mΩ vs. 380 mΩ) and Q_g (27 nC vs. 32 nC). No layout or driver changes are needed; expect ~0.4 W lower conduction loss at 12 A and improved thermal margin.

Is the drain tab electrically isolated from the mounting surface?

Yes - the TO-220FP package features an electrically isolated drain tab. The isolation withstands 2500 VAC for 1 minute per IEC 60747-5-2, allowing direct heatsink mounting without insulating pads - though thermal interface material must still be applied for optimal heat transfer.

Does this MOSFET require negative gate turn-off voltage?

No - the device operates reliably with 0 V to +15 V gate drive. Its V_GS(th) range (3.0–4.5 V) and low Miller plateau ensure clean turn-on/turn-off using standard 12 V logic-level drivers; negative bias is unnecessary and not recommended per Infineon's application notes.

IPP65R280E6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 13.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R280E6XKSA1 FAQ

1.How can I place an order for IPP65R280E6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R280E6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R280E6XKSA1 reliable?

The price and inventory of IPP65R280E6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R280E6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R280E6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R280E6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R280E6XKSA1?

IPP65R280E6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R280E6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R280E6XKSA1?

For technical support, including IPP65R280E6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R280E6XKSA1 requirements.

6.How does Aetrix verify that IPP65R280E6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R280E6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R280E6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R280E6XKSA1?

All IPP65R280E6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R280E6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R280E6XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R280E6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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