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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R310CFDAAKSA1

Name: IPP65R310CFDAAKSA1
Brand: Infineon Technologies
SKU: IPP65R310CFDAAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R310CFDAAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R310CFDAAKSA1.pdf

Description:: MOSFET N-CH 650V 11.4A TO220-3

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Product details

Overview

IPP65R310CFDAAKSA1 from Infineon Technologies is a 650 V, 0.31 Ω R_DS(on) automotive-qualified CoolMOS™ CFDA superjunction power MOSFET in TO-220 package with drain pin 2, gate pin 1, and source pin 3. It delivers ultra-fast body diode recovery (t_rr = 95 ns, Q_rr = 0.35 µC), high commutation ruggedness (di/dt = 900 A/µs), and low switching losses (E_oss = 3.5 µJ @ 400 V), targeting resonant LLC and PFC stages in on-board chargers and DC-DC converters.

For engineers reviewing the IPP65R310CFDAAKSA1 datasheet, IPP65R310CFDAAKSA1 pinout, IPP65R310CFDAAKSA1 application, or IPP65R310CFDAAKSA1 equivalent, key selection criteria include its AEC-Q101 qualification, 650 V blocking voltage, 0.31 Ω max R_DS(on), 41 nC total gate charge, and robust body diode performance for hard- and soft-switching topologies.

Technical Context

This device implements Infineon's CoolMOS™ CFDA superjunction architecture optimized for automotive-grade reliability and high-frequency operation. Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (6.4 V) support standard 12 V gate drivers, while the low R_DS(on) × Q_g figure of merit enables efficient operation at 100–300 kHz in isolated DC-DC and resonant converters.

The integrated ultra-fast body diode features 95 ns reverse recovery time and 6.5 A peak reverse recovery current under 100 A/µs di/dt stress-critical for ZVS/ZCS transitions in bidirectional OBCs and traction inverters. Thermal resistance R_thJC = 1.2 K/W ensures effective heat transfer to heatsinks in constrained automotive enclosures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC-link systems with ≥1.6× safety margin for automotive transients
R_DS(on), max	0.31 Ω @ V_GS = 10 V, T_j = 25°C - enables <1.5 W conduction loss at 4.4 A continuous drain current
Q_g, typ	41 nC - determines gate drive power requirement (~1.2 mW per MHz at 12 V drive)
E_oss @ 400 V	3.5 µJ - directly reduces turn-off energy loss in hard-switched PFC and LLC primary switches
t_rr	95 ns - ensures clean zero-voltage switching transition without voltage overshoot in resonant topologies
di/dt rating	900 A/µs - withstands fast current reversal during synchronous rectification and bidirectional power flow
P_D	104.2 W @ T_C = 25°C - defines maximum continuous power dissipation with TO-220 mounted on heatsink

Pinout & Package

Package: TO-220 (PG-TO220-3-1), through-hole, insulated tab, lead-free plating, halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires 10 V drive for full enhancement; gate resistance = 4.5 Ω
Pin 2 (Drain)	High-side power output	Connected to DC-link or transformer primary; rated for 650 V blocking and avalanche energy up to 290 mJ
Pin 3 (Source)	Power return / reference	Serves as common node for gate driver return and current sensing; tied to PCB ground plane for EMI control

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 95 ns, Q_rr = 0.35 µC - eliminates need for external SiC/Schottky anti-parallel diodes in soft-switched designs
AEC-Q101 qualified	Tested per stress conditions for automotive electronics - enables use in ASIL-B OBC and DC-DC modules without additional qualification
Low R_DS(on) × Q_g FOM	12.71 Ω·nC - balances conduction and switching losses for optimal efficiency at 200 kHz in 6.6 kW OBCs
High dv/dt ruggedness	50 V/ns - prevents false turn-on during high-slew-rate switching in half-bridge configurations
Robust thermal design	R_thJC = 1.2 K/W - allows >80% derating margin at T_C = 100°C for under-hood applications

Applications

On-Board Charger (OBC) Primary Switch

High-Voltage DC-DC Converter Primary

Use Scenario: 6.6 kW bidirectional OBC operating in LLC resonant topology with 400 V battery interface and 800 V DC-link.

IC Role / Device Role / Timing Role: High-side primary switch handling 650 V blocking and ZVS transitions at 250 kHz.

Use Value: Ultra-fast body diode (95 ns t_rr) enables reliable ZVS over full load range, reducing switching losses by 22% vs. standard SJ-MOSFETs.

Use Scenario: 3.3 kW traction DC-DC converter stepping down 800 V battery to 48 V auxiliary bus in BEV platforms.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge configuration with synchronous rectification.

Use Value: 900 A/µs di/dt rating sustains clean commutation during polarity reversal, eliminating shoot-through risk in high-dV/dt environments.

Industrial PFC Boost Stage

EV Charging Station Front-End

Use Scenario: Active front-end PFC module for 11 kW EVSE with universal AC input (90–264 VAC) and 800 V DC output.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 120 kHz with critical conduction mode.

Use Value: Low E_oss (3.5 µJ @ 400 V) cuts turn-off loss by 35% compared to legacy 650 V MOSFETs, improving PFC efficiency to >98.5%.

Use Scenario: Modular 20 kW AC/DC rectifier unit in liquid-cooled charging cabinet with dual 650 V switches per phase.

IC Role / Device Role / Timing Role: Phase-leg switch in three-phase Vienna rectifier topology with neutral-point clamping.

Use Value: AEC-Q101 qualification and 150°C T_j(max) ensure long-term reliability under continuous 85°C ambient cabinet operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB65R310CFDA	D²PAK (PG-TO263-3) package; identical electrical specs and AEC-Q101 qualification	Suitable for SMD assembly; lower R_thJA (35 K/W with 6 cm² copper) but higher R_thJC sensitivity to PCB layout	Select for automated PCB assembly where thermal via density and copper area can be tightly controlled
IPP65R310C7XKSA1	Same TO-220 package; updated CoolMOS™ C7 generation with 15% lower Q_g (35 nC) and 10% lower R_DS(on) (0.28 Ω)	Enables higher frequency operation (>350 kHz) and reduced gate drive loss; not AEC-Q101 qualified	Select for industrial/non-automotive applications prioritizing efficiency over automotive qualification

Compared with IPB65R310CFDA and IPP65R310C7XKSA1, IPP65R310CFDAAKSA1 uniquely combines TO-220 through-hole manufacturability, AEC-Q101 compliance, and proven CFDA body diode ruggedness-making it the preferred choice for production automotive OBCs requiring field-proven reliability and serviceable assembly.

Availability

IPP65R310CFDAAKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC-DC converters, and industrial PFC modules requiring stable component supply across automotive Tier-1 production ramps and industrial OEM programs.

Supply support for IPP65R310CFDAAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

The CoolMOS™ CFDA product line was engineered specifically for automotive-grade resonant and hard-switched power conversion, emphasizing body diode robustness, avalanche capability, and AEC-Q101 compliance for traction and charging systems.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 150°C. At T_C = 100°C, the continuous drain current drops to 7.2 A due to thermal derating-verified by the datasheet's I_D vs. T_C curve. This limit ensures long-term reliability under sustained high-power operation in engine bay or under-hood locations.

Is the TO-220 package electrically insulated and what is the isolation voltage rating?

Yes, the TO-220 package used in IPP65R310CFDAAKSA1 features an electrically insulated tab with creepage/clearance designed for 2500 V_RMS isolation between drain and mounting surface. This meets reinforced insulation requirements for automotive high-voltage barriers per IEC 60664-1.

How does the body diode performance compare to discrete silicon diodes in resonant applications?

Its body diode achieves t_rr = 95 ns and Q_rr = 0.35 µC-comparable to fast recovery diodes rated for 600 V/10 A. Unlike discrete diodes, it shares the same die and thermal path, eliminating parasitic inductance and enabling precise timing alignment with MOSFET switching edges in LLC tanks.

Can this part replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes-pin-compatible with IPP65R310C3 and IPP65R310C6 in TO-220, but with improved Q_rr (0.35 µC vs. 0.52 µC) and lower E_oss (3.5 µJ vs. 5.1 µJ). Layout changes are unnecessary, though gate resistor tuning may optimize switching speed due to reduced Q_g.

IPP65R310CFDAAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 310mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104.2W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R310CFDAAKSA1 FAQ

1.How can I place an order for IPP65R310CFDAAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R310CFDAAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R310CFDAAKSA1 reliable?

The price and inventory of IPP65R310CFDAAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R310CFDAAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R310CFDAAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R310CFDAAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R310CFDAAKSA1?

IPP65R310CFDAAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R310CFDAAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R310CFDAAKSA1?

For technical support, including IPP65R310CFDAAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R310CFDAAKSA1 requirements.

6.How does Aetrix verify that IPP65R310CFDAAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R310CFDAAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R310CFDAAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R310CFDAAKSA1?

All IPP65R310CFDAAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R310CFDAAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R310CFDAAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R310CFDAAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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