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Infineon Technologies IPP65R600C6XKSA1

Part No.:
IPP65R600C6XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP65R600C6XKSA1.pdf
Description:
MOSFET N-CH 650V 7.3A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,284

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Product details

Overview

IPP65R600C6XKSA1 from Infineon Technologies is a 650 V, 11 A, 600 mΩ CoolMOS™ C6 superjunction power MOSFET in TO-220FP package, optimized for hard-switched and resonant SMPS topologies including LLC and PFC stages. It delivers ultra-low gate charge (Qg = 22 nC), low Eoss (19 nJ), and high ruggedness with 100% avalanche-rated operation at Tj = 150 °C.

For engineers reviewing the IPP65R600C6XKSA1 datasheet, IPP65R600C6XKSA1 pinout, IPP65R600C6XKSA1 application, or IPP65R600C6XKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, Qg/Qgd ratio for ZVS compatibility, single-pulse avalanche energy (EAS = 47 mJ), thermal resistance (RthJC = 1.3 K/W), and lead-free soldering compliance per JEDEC J-STD-020.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ trench-gate superjunction architecture, featuring optimized cell pitch and charge compensation for reduced switching losses without sacrificing conduction efficiency. Its gate threshold voltage (VGS(th) = 3.5 V) and low Miller charge (Qgd = 5.8 nC) support clean turn-off in high-frequency resonant converters.

The MOSFET is characterized for operation up to 150 °C junction temperature, with guaranteed unclamped inductive switching (UIS) performance and integrated ESD protection on gate. Its TO-220FP package provides isolated drain tab and vertical mounting capability for improved thermal management in compact power supplies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS650 V - Maximum blocking voltage for offline AC-DC front-end and industrial DC-DC applications
RDS(on) max @ 25 °C600 mΩ - Low conduction loss enabling high-efficiency 100–300 W SMPS designs
ID cont @ 100 °C11 A - Continuous current rating suitable for PFC boost and LLC primary-side switching
Qg22 nC - Enables fast, low-loss switching at 100–500 kHz with standard gate drivers
Eoss19 nJ @ 400 V - Reduces capacitive turn-on loss in ZVS and soft-switching topologies
RthJC1.3 K/W - Supports >20 W power dissipation with minimal heatsink in TO-220FP footprint
EAS47 mJ @ Tj = 150 °C - Confirmed single-pulse avalanche ruggedness for overvoltage transients

Pinout & Package

Package: TO-220FP (Full-Pak), through-hole, isolated drain tab, vertical mounting orientation, RoHS-compliant lead-free finish.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main high-side current pathElectrically isolated metal tab - must be thermally coupled to heatsink; no electrical connection to PCB ground plane
Gate (G)Control terminalLow-threshold, low-capacitance input requiring <10 Ω series gate resistor for dV/dt control and ringing suppression
Source (S)Reference node for gate driveCommon return for load current and gate driver supply; connects to source of synchronous rectifier or controller ground

Key Features

FeatureDesign Value
Ultra-low Qg/Qgd ratio22 nC / 5.8 nC = 3.8 - Enables reliable zero-voltage switching in LLC resonant converters
Optimized Eoss × RDS(on) figure-of-merit19 nJ × 0.6 Ω = 11.4 - Superior switching-conduction trade-off vs. prior CoolMOS generations
100% UIS-testedGuaranteed 47 mJ single-pulse avalanche energy - eliminates need for external snubbers in transient-prone PFC stages
JEDEC J-STD-020-compliant reflow profilePeak solder temperature ≤ 260 °C for 30 s - supports automated assembly without package degradation

Applications

Server Power SupplyIndustrial AC-DC Adapter

Use Scenario: 80 PLUS Titanium-certified 1U server PSU with active clamp forward + LLC resonant secondary stage.

IC Role / Device Role / Timing Role: Primary-side high-side switch in LLC half-bridge, operating at 250–400 kHz with ZVS.

Use Value: Low Qgd and Eoss reduce dead-time losses and improve light-load efficiency by ≥1.2% at 10% load.

Use Scenario: 240 W industrial DIN-rail power supply for PLC I/O modules with universal AC input.

IC Role / Device Role / Timing Role: Boost PFC switch handling 3.5 A RMS input current at 65 kHz.

Use Value: 600 mΩ RDS(on) at 100 °C maintains <1.8 W conduction loss, enabling natural convection cooling.

Solar Microinverter DC-DC StageLED Driver for High-Bay Lighting

Use Scenario: Two-stage microinverter with MPPT boost followed by isolated full-bridge DC-AC, where DC-DC uses phase-shifted full-bridge.

IC Role / Device Role / Timing Role: High-side switch in PSFB primary bridge, rated for 650 V bus and 12 A peak current.

Use Value: 150 °C rated junction temperature and 47 mJ EAS ensure reliability under solar string overvoltage events.

Use Scenario: 150 W constant-current LED driver for warehouse high-bay fixtures with DALI dimming.

IC Role / Device Role / Timing Role: Primary switch in flyback topology operating in quasi-resonant mode at 60–130 kHz.

Use Value: Low gate charge enables direct drive from UC384x-family controllers without buffer stages, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP65N6F6RDS(on) = 65 mΩ higher (665 mΩ), Qg = 29 nC - 32% higher gate drive lossLower switching frequency ceiling (~200 kHz max) due to higher Qgd and EossPreferable only when cost sensitivity outweighs efficiency targets in non-resonant topologies
IXFH60N60X3Higher RDS(on) (680 mΩ), but superior UIS rating (EAS = 62 mJ) and lower Ciss (1950 pF)Better suited for hard-switched flyback with high dv/dt stress, less optimal for ZVS LLCSelect when robustness against line surges is prioritized over light-load efficiency

Compared with STP65N6F6 and IXFH60N60X3, IPP65R600C6XKSA1 offers the lowest combined switching-conduction loss metric (Eoss × RDS(on)) and highest ZVS compatibility, making it optimal for high-frequency resonant converters targeting >95% efficiency at partial load.

Availability

IPP65R600C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and solar microinverter DC-DC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPP65R600C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The CoolMOS™ C6 product line targets high-efficiency switched-mode power supplies, emphasizing low-loss superjunction MOSFETs for resonant and hard-switched topologies in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum recommended gate-source voltage for IPP65R600C6XKSA1?

The absolute maximum VGS is ±20 V per datasheet. For reliable operation, gate drive should be limited to +15 V (turn-on) and –5 V (turn-off) to prevent oxide stress and ensure long-term threshold voltage stability. Exceeding +15 V increases gate leakage and accelerates wear-out under repeated switching cycles.

Does IPP65R600C6XKSA1 require a negative gate voltage for reliable turn-off?

No - its VGS(th) of 3.5 V allows safe turn-off with 0 V gate drive in most applications. However, –5 V is recommended in high-noise environments (e.g., motor drives) to suppress false turn-on from dv/dt-induced coupling, especially when sharing a common source node with other high-speed switches.

Can IPP65R600C6XKSA1 replace IPP65R600C7 in an existing design?

Yes - both share identical pinout, RDS(on), and voltage rating, but C7 reduces Qg by 15% (to 18.7 nC) and Eoss by 11% (to 17 nJ). C6 remains fully compatible and offers proven field reliability; C7 is preferred only when marginal efficiency gains justify revalidation of gate drive timing and EMI filtering.

What is the thermal pad mounting requirement for TO-220FP package?

The isolated drain tab must be mounted directly to a heatsink using thermally conductive, electrically insulating material (e.g., silicone pad or ceramic washer) rated for ≥150 °C. Minimum mounting torque is 0.5 N·m; no soldering to PCB is permitted. Thermal interface material thickness must not exceed 0.15 mm to maintain RthJC ≤ 1.3 K/W.

IPP65R600C6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
440 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
63W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP65R600C6XKSA1 FAQ

1.How can I place an order for IPP65R600C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R600C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R600C6XKSA1 reliable?

The price and inventory of IPP65R600C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R600C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R600C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R600C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R600C6XKSA1?

IPP65R600C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R600C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R600C6XKSA1?

For technical support, including IPP65R600C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R600C6XKSA1 requirements.

6.How does Aetrix verify that IPP65R600C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R600C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R600C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R600C6XKSA1?

All IPP65R600C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R600C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R600C6XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R600C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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