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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R660CFDAAKSA1

Name: IPP65R660CFDAAKSA1
Brand: Infineon Technologies
SKU: IPP65R660CFDAAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R660CFDAAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R660CFDAAKSA1.pdf

Description:: MOSFET N-CH 650V 6A TO220-3

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Product details

Overview

IPP65R660CFDAAKSA1 from Infineon Technologies is a 650 V, 0.66 Ω (max) N-channel superjunction MOSFET in PG-TO220-3 package, featuring ultra-fast body diode (trr = 65 ns, Qrr = 0.2 µC), high commutation ruggedness (dif/dt = 900 A/µs), and low gate charge (Qg = 20 nC). It is engineered for resonant and hard-switching PFC and SMPS in industrial power supplies.

For engineers reviewing the IPP65R660CFDAAKSA1 datasheet, IPP65R660CFDAAKSA1 pinout, IPP65R660CFDAAKSA1 application, or IPP65R660CFDAAKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, Eoss @ 400 V (1.8 µJ), dv/dt ruggedness (50 V/ns), and AEC-Q101 qualification for robust operation in demanding power conversion topologies.

Technical Context

This CoolMOS™ CFDA device implements superjunction architecture with optimized charge balance, enabling simultaneous reduction of conduction loss (RDS(on) = 0.66 Ω @ 10 V, 25°C) and switching loss (Eoss = 1.8 µJ @ 400 V). Its body diode exhibits controlled reverse recovery (trr = 65 ns, Irrm = 4.5 A) and high di/dt capability (900 A/µs), critical for ZVS/ZCS operation.

The MOSFET supports gate drive simplicity via low Qg (20 nC) and moderate VGS(th) (3.5–4.5 V), with thermal resistance RthJC = 2 K/W ensuring efficient heat transfer to heatsinks. It operates across –40°C to +150°C junction temperature and is qualified per AEC-Q101 for automotive-grade reliability in non-automotive industrial use.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for offline AC-DC and industrial DC-DC converters
R_DS(on), max	0.66 Ω @ 10 V, 25°C - Enables low conduction loss at 6 A continuous drain current (T_C = 100°C)
Q_g, typ	20 nC - Reduces gate driver power requirement and enables high-frequency switching up to 300 kHz
E_oss @ 400 V	1.8 µJ - Low output capacitance energy minimizes turn-on loss in resonant LLC and PFC stages
trr / Qrr	65 ns / 0.2 µC - Fast, soft reverse recovery reduces EMI and stress during diode commutation
dif/dt ruggedness	900 A/µs - Supports reliable operation in high-dV/dt, high-di/dt resonant and synchronous rectifier circuits
R_thJC	2 K/W - Enables direct mounting to heatsink for thermal management in 62.5 W power dissipation applications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, tab-drain), with isolated mounting screw hole and 70 Ncm torque rating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Control terminal requiring <6.8 Ω series resistance for stable switching; threshold 3.5–4.5 V
Pin 2 (center/tab)	Drain	Main high-voltage power terminal; electrically connected to metal tab for thermal and electrical path
Pin 3 (right)	Source	Power return and reference node for gate drive; connects to PCB ground plane or source resistor

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 65 ns, Qrr = 0.2 µC - Enables zero-current switching in LLC resonant converters without external diode
High commutation ruggedness	dif/dt = 900 A/µs - Sustains rapid current reversal under hard commutation without failure
Low figure-of-merit	R_DS(on) × Q_g = 13.2 Ω·nC - Balances conduction and switching losses for optimal efficiency at 100–300 kHz
AEC-Q101 qualified	Stress-tested per automotive reliability standard - Ensures long-term stability in industrial environments with thermal cycling

Applications

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: 3.3 kW active clamp forward or LLC resonant converter operating at 200–300 kHz with 400 V bus.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 650 V blocking and fast ZVS transitions.

Use Value: Low Eoss (1.8 µJ) and soft trr reduce switching loss and EMI, enabling >96% efficiency at full load.

Use Scenario: High-density 1U server PSU with dual-phase interleaved PFC stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC, switching at 70–100 kHz.

Use Value: Ultra-low Qg (20 nC) eases gate driver design and improves light-load efficiency over Si MOSFET alternatives.

Motor Drive Inverters

Renewable Energy Inverters

Use Scenario: 5–7.5 kW three-phase inverter for HVAC compressors using 650 V DC bus.

IC Role / Device Role / Timing Role: Half-bridge upper/lower switch with integrated body diode conducting freewheeling current.

Use Value: 900 A/µs dif/dt ruggedness prevents commutation failure during motor phase reversal transients.

Use Scenario: String inverter MPPT stage with 600 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in boost pre-regulator before H-bridge inverter.

Use Value: AEC-Q101 qualification ensures field reliability under solar farm thermal cycling (-40°C to +85°C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R660C7XKSA1	Same R_DS(on) and V_DS, but C7 generation: lower Q_gd (9.5 nC vs. 11 nC) and reduced E_oss (1.4 µJ vs. 1.8 µJ)	Better suited for >500 kHz operation due to improved dynamic parameters; not AEC-Q101 qualified	Select C7 for higher-frequency designs where gate drive loss and EMI are critical; retain CFDA for AEC-Q101 compliance needs.
IPW65R095C7FKSA1	Lower R_DS(on) (95 mΩ), higher Q_g (63 nC), same V_DS; D²PAK package	Optimized for conduction-limited applications (e.g., high-current PFC); requires larger PCB footprint and different thermal interface	Choose when R_DS(on) dominates system loss and board space allows D²PAK; avoid if gate drive capability or TO-220 mechanical fit is constrained.

Compared with IPP65R660C7XKSA1 and IPW65R095C7FKSA1, IPP65R660CFDAAKSA1 uniquely balances ultra-fast body diode performance, AEC-Q101 reliability, and TO-220 mechanical compatibility-making it optimal for cost-sensitive, thermally constrained industrial SMPS where commutation robustness is prioritized over peak frequency or lowest R_DS(on).

Availability

IPP65R660CFDAAKSA1 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server/telecom SMPS, and motor drive inverters requiring stable component supply, long lifecycle support, and consistent parametric performance across production batches.

Supply support for IPP65R660CFDAAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ CFDA product line targets high-efficiency, high-reliability industrial and telecom power conversion, emphasizing fast body diode performance and commutation ruggedness for resonant topologies.

FAQ

What is the maximum continuous drain current for IPP65R660CFDAAKSA1 at 100°C case temperature?

The maximum continuous drain current is 3.8 A at T_C = 100°C, limited by junction temperature (T_j ≤ 150°C) and thermal resistance (R_thJC = 2 K/W). This value assumes proper heatsinking and derating per the Safe Operating Area curve in the datasheet, where pulse current capability remains 17 A at T_C = 25°C.

Does IPP65R660CFDAAKSA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 3.5–4.5 V and is fully controllable with 0 V to +10 V or +13 V gate drive. A negative gate voltage is not required; however, applying –5 V during off-state improves noise immunity in high-dv/dt environments, as confirmed by Infineon's recommended gate drive circuit in Application Note AN2015-04.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves trr = 65 ns and Qrr = 0.2 µC at 400 V, with 900 A/µs di/dt capability-significantly faster and more rugged than standard planar MOSFETs (typically trr > 200 ns, Qrr > 1 µC). This enables clean ZVS transitions in LLC converters without external SiC diodes, reducing BOM count and layout complexity.

Is IPP65R660CFDAAKSA1 suitable for use in automotive applications?

Although qualified to AEC-Q101, this part is not intended for automotive safety-critical systems (e.g., ADAS, powertrain). Its design focus is industrial and telecom power conversion. For automotive use, Infineon recommends the CoolMOS™ CE or CP families with full automotive PPAP documentation and extended temperature screening.

IPP65R660CFDAAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 543 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R660CFDAAKSA1 FAQ

1.How can I place an order for IPP65R660CFDAAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R660CFDAAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R660CFDAAKSA1 reliable?

The price and inventory of IPP65R660CFDAAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R660CFDAAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R660CFDAAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R660CFDAAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R660CFDAAKSA1?

IPP65R660CFDAAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R660CFDAAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R660CFDAAKSA1?

For technical support, including IPP65R660CFDAAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R660CFDAAKSA1 requirements.

6.How does Aetrix verify that IPP65R660CFDAAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R660CFDAAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R660CFDAAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R660CFDAAKSA1?

All IPP65R660CFDAAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R660CFDAAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R660CFDAAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R660CFDAAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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