Infineon Technologies IPP65R660CFDXKSA1

Overview

IPP65R660CFDXKSA1 from Infineon Technologies is a 650V superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, designed for high-efficiency resonant switching topologies. It delivers R_DS(on) = 0.66 Ω (max), Q_g = 22 nC (typ), E_oss = 1.8 µJ @ 400V, and features an ultra-fast, robust body diode with t_rr = 65 ns and di/dt capability of 900 A/µs. It is used in LLC resonant converters for server PSUs and telecom rectifiers.

For engineers reviewing the IPP65R660CFDXKSA1 datasheet, IPP65R660CFDXKSA1 pinout, IPP65R660CFDXKSA1 application, or IPP65R660CFDXKSA1 equivalent, key selection criteria include its 650V V_DS, low R_DS(on) × Q_g figure-of-merit, commutation ruggedness, thermal resistance (R_thJC = 2 °C/W), and TO-220 package compatibility with industrial PCB layouts.

Technical Context

This device implements Infineon's superjunction (SJ) cell architecture with charge compensation, enabling high voltage blocking while minimizing conduction and switching losses. Its optimized gate charge profile supports ZVS operation in soft-switching converters, and its body diode exhibits controlled reverse recovery with low Q_rr (0.2 µC) and I_rrm (4.5 A).

The CFD2 generation integrates enhanced avalanche ruggedness (E_AS = 115 mJ) and dv/dt immunity (50 V/ns) for reliable operation in noisy, high-dV/dt environments such as PFC and half-bridge LLC stages. Thermal design is supported by a low junction-to-case resistance of 2 °C/W in TO-220 mounting.

Key Specifications

Pinout & Package

IPP65R660CFDXKSA1 is housed in a TO-220 package with isolated tab (PG-TO220), featuring three leads: drain connected to the metal tab, gate on lead 1, source on lead 3. The package supports screw-mount heatsinking and complies with JEDEC TO-220 mechanical standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R660CFD and IPB65R660CFD, IPP65R660CFDXKSA1 offers identical electrical performance in a through-hole TO-220 package-ideal for cost-sensitive, medium-power industrial designs requiring manual assembly or field serviceability without SMT infrastructure.

Availability

IPP65R660CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and solar microinverters requiring stable component supply, long-lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPP65R660CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency resonant and soft-switching power conversion, targeting reduced system size, improved thermal behavior, and enhanced reliability in 650 V industrial and telecom power stages.

FAQ

What is the maximum continuous drain current for IPP65R660CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 3.8 A at T_c = 100°C, limited by thermal constraints-not by silicon capability. This value is derived from the device's 62.5 W power dissipation rating and R_thJC = 2 °C/W, ensuring safe operation without exceeding T_j,max = 150°C under steady-state conditions with proper heatsinking.

Does IPP65R660CFDXKSA1 require a negative gate voltage for reliable turn-off?

No. The device specifies a gate-source voltage range of ±20 V (static), and stable turn-off is achieved with 0 V gate bias. A small negative bias (e.g., –5 V) may improve noise immunity in high-dv/dt environments but is not required for functional operation per datasheet characterization at V_GS = 0 V.

Can IPP65R660CFDXKSA1 replace older CoolMOS™ CFD1 devices in existing designs?

Yes-electrical parameters including V_DS, R_DS(on), Q_g, and body diode characteristics are improved or matched, and the TO-220 footprint is identical. However, layout review is recommended due to lower E_oss and faster switching, which may increase gate drive loop sensitivity and require updated snubber or gate resistor tuning.

Is the metal tab of IPP65R660CFDXKSA1 electrically connected to the drain?

Yes-the TO-220 metal tab is internally connected to the drain terminal (Pin 2). When mounted to a heatsink, electrical isolation (e.g., mica washer or insulating pad) is mandatory unless the heatsink is referenced to the drain potential. This configuration is confirmed in Infineon's package outline PG-TO220 and thermal test setup diagrams.