Infineon Technologies IPP70N04S307AKSA1

Overview

IPP70N04S307AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 6.2 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C, is AEC-Q101 qualified, 100% avalanche tested, and used in high-current DC-DC converters and motor control stages.

For engineers reviewing the IPP70N04S307AKSA1 datasheet, IPP70N04S307AKSA1 pinout, IPP70N04S307AKSA1 application, or IPP70N04S307AKSA1 equivalent, key selection criteria include R_DS(on) at 70 A, thermal resistance (R_thJC = 1.9 K/W), avalanche energy (E_AS = 145 mJ), gate charge (Q_g = 30–40 nC), and automotive qualification status.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive and industrial power stages. Its 40 V rating targets 12 V battery systems, while the 1.9 K/W junction-to-case thermal resistance enables high-power operation with minimal heatsinking.

The MOSFET features a co-packaged body diode with 1.0–1.3 V forward voltage at 70 A and 34 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate plateau voltage is 6.0 V, ensuring robust drive margin against Miller-induced turn-on.

Key Specifications

Pinout & Package

Package: PG-TO220-3-1 - Through-hole, isolated tab, vertical mounting, lead-free (RoHS-compliant) green package rated MSL1 up to 260 °C peak reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IPB70N04S3-07 and IPI70N04S3-07, IPP70N04S307AKSA1 provides optimal cost-performance balance for manual or semi-automated through-hole production, retains full AEC-Q101 compliance, and delivers identical electrical performance while leveraging widely available TO-220 assembly infrastructure.

Availability

IPP70N04S307AKSA1 is available at Aetrix Electronics and suitable for automotive starter-generator control, electric power steering motor drives, industrial 12 V DC-DC converters, and HVAC blower modules requiring stable component supply across multi-year production cycles.

Supply support for IPP70N04S307AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and robust avalanche capability.

FAQ

Is IPP70N04S307AKSA1 pin-compatible with standard TO-220 N-channel MOSFETs?

Yes - it uses the industry-standard PG-TO220-3-1 footprint with Drain (tab), Source, and Gate terminals in the same physical layout as generic TO-220 devices. Mounting hole spacing, lead pitch, and outline dimensions match JEDEC TO-220AB specifications, enabling drop-in replacement in existing board designs without layout changes.

What is the maximum recommended gate resistor value for 100 kHz switching in a buck converter?

For 100 kHz operation with 30–40 nC total gate charge, a 5.6 Ω gate resistor is recommended to limit peak gate current to ~1.8 A while maintaining t_r ≈ 8 ns and t_f ≈ 7 ns. Higher values increase switching losses; lower values risk ringing and driver overstress. Layout-dependent parasitic inductance must also be minimized.

Does this MOSFET require a negative gate turn-off voltage to prevent shoot-through in half-bridge configurations?

No - its V_GS(th) range (2.1–4.0 V) and low Crss ensure safe turn-off with 0 V gate drive. However, applying –5 V enhances noise immunity in high-dV/dt environments. The device does not require negative bias for basic functionality, unlike some ultra-low-threshold MOSFETs.

Can IPP70N04S307AKSA1 replace IPP70N04S3L-07 in existing designs?

No - the "L" suffix denotes Logic-Level drive (V_GS(th) max = 2.5 V), whereas IPP70N04S307AKSA1 has V_GS(th) up to 4.0 V and requires ≥6 V gate drive for full enhancement. Substitution would cause incomplete turn-on and excessive conduction loss unless gate drive voltage is increased to 10 V.