Infineon Technologies IPP70N10SL16AKSA1

Overview

IPP70N10SL16AKSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 70 A continuous drain current at TC = 25 °C, and 16 mΩ maximum RDS(on) at VGS = 10 V, ID = 50 A. It operates up to 175 °C junction temperature, features avalanche and dv/dt ruggedness, and is housed in a PG-TO220-3-1 package - widely used in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IPP70N10SL16AKSA1 datasheet, IPP70N10SL16AKSA1 pinout, IPP70N10SL16AKSA1 application, or IPP70N10SL16AKSA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 700 mJ single-pulse avalanche energy rating, 1.2–2.0 V gate threshold voltage range, and thermal resistance of 0.6 K/W (junction-to-case), critical for thermally constrained industrial power stages.

Technical Context

This MOSFET employs planar SIPMOS technology optimized for low conduction loss and robust switching behavior under hard commutation. Its 16 mΩ RDS(on) at 10 V gate drive enables high-efficiency operation in 12–48 V input systems, while the 3630 pF typical input capacitance and 160–240 nC total gate charge define gate driver sizing requirements for <105 ns turn-on delay and <375 ns rise time at RG = 1.3 Ω.

The device integrates a fast-recovery body diode with 100–150 ns reverse recovery time and 600–900 nC Qrr, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Its 6 kV/µs dv/dt rating and 280 A pulsed drain current capability ensure reliability during transient overloads and inductive switching events.

Key Specifications

Pinout & Package

IPP70N10SL16AKSA1 uses the PG-TO220-3-1 package: insulated case, vertical mounting, through-hole leaded configuration with 0.6 K/W junction-to-case thermal resistance. The tab is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB70N10SL3-16 and IPP65R110CFD7, IPP70N10SL16AKSA1 delivers optimal balance of low RDS(on), logic-level drive, and through-hole thermal management - making it preferred for cost-sensitive, high-current 100 V industrial switching where TO-220 mechanical robustness and heatsink accessibility are essential.

Availability

IPP70N10SL16AKSA1 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and solar charge controllers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPP70N10SL16AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to Infineon's SIPMOS™ logic-level power MOSFET product line, engineered for high-current, medium-voltage switching in industrial motor controls, renewable energy inverters, and robust power conversion systems.

FAQ

What is the maximum safe gate-source voltage for IPP70N10SL16AKSA1?

The absolute maximum gate-source voltage is ±20 V per the datasheet. Operation above +15 V provides no RDS(on) improvement and risks gate oxide degradation over time. For logic-level compatibility, 4.5–10 V is recommended, with 10 V ensuring full enhancement and lowest on-resistance across temperature.

Can IPP70N10SL16AKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing. At 100 °C junction temperature, RDS(on) increases ~30%, promoting thermal stability. Use matched gate resistors (≤1.5 Ω) and symmetrical PCB layout with equal trace inductance to avoid dynamic imbalance during switching.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dV/dt and prevent oscillation. For 100 kHz switching with a 1.3 Ω driver output impedance, a 10–22 Ω series resistor yields optimal trade-off between 105 ns turn-on delay and EMI suppression. Lower values increase peak gate current but risk ringing; higher values slow switching and raise losses.

Is the TO-220 tab electrically isolated in IPP70N10SL16AKSA1?

No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink requires a mica or polymer insulator pad plus shoulder washers. Thermal interface material must not compromise dielectric strength; minimum creepage distance of 2.5 mm is required for 100 V working voltage.