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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N03S4L04AKSA1

Name: IPP80N03S4L04AKSA1
Brand: Infineon Technologies
SKU: IPP80N03S4L04AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N03S4L04AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N03S4L04AKSA1.pdf

Description:: MOSFET N-CH 30V 80A TO220-3

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Product details

Overview

IPP80N03S4L04AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 3.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature and AEC-Q101 qualification - used in high-current DC-DC converter primary-side switching and motor control H-bridge legs.

For engineers reviewing the IPP80N03S4L04AKSA1 datasheet, IPP80N03S4L04AKSA1 pinout, IPP80N03S4L04AKSA1 application, or IPP80N03S4L04AKSA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (95 mJ), thermal resistance (R_thJC = 1.6 K/W), and AEC-Q101 compliance for under-hood power stages.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance: typical Q_g = 67.5 nC and Q_gd = 12 nC at V_DD = 15 V, enabling efficient operation in synchronous rectification and PWM-driven motor inverters.

Its robustness is defined by 100% unclamped inductive switching (UIS) testing up to 95 mJ at T_j = 25 °C, and reverse diode characteristics with V_SD = 0.9 V (typ.) at I_F = 80 A and T_j = 25 °C, supporting freewheeling in half-bridge configurations without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V nominal automotive and industrial bus systems with 20 % overvoltage margin
R_DS(on) max	3.4 mΩ at V_GS = 10 V, I_D = 80 A - enables ≤2.7 W conduction loss at full load in TO-220 footprint
I_D continuous	80 A at T_C = 100 °C - sustains high-current motor phase switching without derating below 100 °C case temp
E_AS	95 mJ single-pulse avalanche energy - withstands inductive kickback in 12–48 V motor drives without snubber
R_thJC	1.6 K/W - allows direct heatsink mounting for thermal management in space-constrained power modules
Q_g	60–75 nC - sets gate driver current requirement ≥2 A peak for <100 ns turn-on in 100 kHz PWM
V_GS(th)	1.0–2.2 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level controllers

Pinout & Package

IPP80N03S4L04AKSA1 is housed in PG-TO220-3-1 package: isolated tab (Drain), vertical lead orientation, through-hole mounting. Thermal pad is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 pF layout capacitance for stable switching
Pin 3 (Drain)	Power output / heat sink interface	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-Drain topology

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and UIS
175 °C operating temperature	Enables placement near hot components (e.g., engine bay ECUs) without thermal throttling or derating
3.4 mΩ R_DS(on) at 10 V	Reduces conduction loss by >35 % vs. legacy 5 mΩ TO-220 MOSFETs in 48 V battery systems
100 % avalanche tested	Guarantees minimum 95 mJ single-pulse ruggedness - eliminates need for external clamping in brushed DC motor drivers
Green product (RoHS)	Lead-free matte tin plating on leads and compliant with EU Directive 2011/65/EU Annex II substance restrictions

Applications

Automotive Body Control Module (BCM)

Industrial 48 V DC-DC Converter

Use Scenario: High-side load switching for headlamp, fog lamp, and radiator fan control in 12 V/24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Power switch in high-side configuration with integrated charge pump or bootstrap gate driver.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 40–60 A loads, extending relay life and reducing PCB copper area.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V buck-boost converter for telecom and server power supplies.

IC Role / Device Role / Timing Role: Main switching element operating at 100–300 kHz with zero-voltage switching (ZVS) assist.

Use Value: 95 mJ avalanche rating absorbs leakage inductance spikes during ZVS transitions, eliminating need for RC snubbers.

Brushed DC Motor Driver (H-Bridge)

Electric Power Steering (EPS) Assist Stage

Use Scenario: Low-side switching in dual H-bridge for seat adjustment, window lift, and sunroof actuation.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in PWM-controlled low-side leg with integrated freewheeling diode.

Use Value: V_SD = 0.9 V (typ.) at 80 A reduces freewheeling loss by 40 % vs. discrete Schottky solutions, improving efficiency at 10–20 kHz PWM.

Use Scenario: Phase-leg switching in 3-phase inverter driving 120–200 W brushless assist motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: High-current, thermally robust power stage component with MSL1 reflow compatibility for automated assembly.

Use Value: 175 °C T_j rating and AEC-Q101 qualification ensure reliability in sealed, convection-limited EPS housing environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N03S4L03AKSA1	R_DS(on) max = 3.0 mΩ at V_GS = 10 V; PG-TO263-3-2 package with exposed drain pad	Better thermal performance (R_thJC = 1.3 K/W) but requires SMD reflow and PCB copper area for heatsinking	Select when board-level thermal management via large copper pour is available and surface-mount assembly is preferred
STP80NF55-08	R_DS(on) max = 8.0 mΩ at V_GS = 10 V; non-automotive grade, 150 °C T_j max	Lacks AEC-Q101 qualification and avalanche testing; lower cost for non-automotive industrial use	Select only for cost-sensitive non-automotive applications where 175 °C operation and UIS ruggedness are not required

Compared with IPB80N03S4L03AKSA1, IPP80N03S4L04AKSA1 trades 0.4 mΩ higher R_DS(on) for through-hole assembly flexibility and identical AEC-Q101 compliance; versus STP80NF55-08, it delivers 58 % lower conduction loss and certified automotive robustness at modest cost premium.

Availability

IPP80N03S4L04AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 48 V DC-DC converters, and brushed DC motor drivers requiring stable component supply across multi-year production cycles.

Supply support for IPP80N03S4L04AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V power systems.

FAQ

What is the maximum gate-source voltage rating for IPP80N03S4L04AKSA1?

The absolute maximum V_GS is ±16 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) specification, with 4.5 V sufficient for 80 A pulsed operation (R_DS(on) ≤ 5 mΩ). Gate resistor selection must limit dV/dt-induced ringing to avoid false turn-on.

Does IPP80N03S4L04AKSA1 require a heatsink in 80 A continuous operation?

Yes - at 80 A continuous with R_DS(on) = 3.4 mΩ, power dissipation is ~21.8 W. With R_thJC = 1.6 K/W and ambient at 70 °C, junction temperature exceeds 175 °C without heatsink. A 1.5 K/W heatsink + thermal interface yields T_j ≈ 145 °C, within spec. Derating to 60 A is advised without forced air.

Is IPP80N03S4L04AKSA1 suitable for synchronous rectification in LLC resonant converters?

Yes - its low Q_gd/Q_g ratio (≈0.18 typ.) and fast t_r/t_f (6 ns/7 ns) support zero-voltage switching in LLC topologies up to 500 kHz. However, body diode reverse recovery (t_rr = 60 ns) requires careful dead-time tuning to avoid shoot-through; gate timing must align with resonant tank voltage zero-crossings.

How does the AEC-Q101 qualification impact board-level reliability testing?

AEC-Q101 qualification confirms the device passed accelerated stress tests including 1000-hour HTGB at 150 °C, 1000-cycle temperature cycling (-55 °C to +150 °C), and 1000-hour HTRB at 150 °C/85 % RH. This eliminates need for duplicate board-level HTOL or TC testing, reducing qualification time by ~6 weeks for automotive Tier 1 suppliers.

IPP80N03S4L04AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N03S4L04AKSA1 FAQ

1.How can I place an order for IPP80N03S4L04AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N03S4L04AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N03S4L04AKSA1 reliable?

The price and inventory of IPP80N03S4L04AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N03S4L04AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N03S4L04AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N03S4L04AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N03S4L04AKSA1?

IPP80N03S4L04AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N03S4L04AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N03S4L04AKSA1?

For technical support, including IPP80N03S4L04AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N03S4L04AKSA1 requirements.

6.How does Aetrix verify that IPP80N03S4L04AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N03S4L04AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N03S4L04AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N03S4L04AKSA1?

All IPP80N03S4L04AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N03S4L04AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N03S4L04AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N03S4L04AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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