Infineon Technologies IPP80N04S204AKSA1

Overview

IPP80N04S204AKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 3.4 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified for automotive applications and features 100% single-pulse avalanche testing with 810 mJ E_AS, enabling robust operation in motor control and DC-DC converter primary-side switching.

For engineers reviewing the IPP80N04S204AKSA1 datasheet, IPP80N04S204AKSA1 pinout, IPP80N04S204AKSA1 application, or IPP80N04S204AKSA1 equivalent, key selection criteria include its 0.5 K/W R_thJC, 175 °C maximum junction temperature, gate plateau voltage of 4.9 V, reverse diode forward voltage of 0.9–1.3 V at 80 A, and 127–170 nC total gate charge - all critical for thermal design, drive strength, and switching loss estimation.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction losses while maintaining fast switching performance. Its 5300 pF input capacitance (C_iss) and 580 pF reverse transfer capacitance (C_rss) support stable gate driving under high dv/dt conditions, and the 4.9 V gate plateau voltage indicates strong Miller immunity during hard-switching transitions.

The integrated body diode exhibits 53–75 ns reverse recovery time (t_rr) and 85–125 nC Q_rr at 20 V reverse bias and 100 A/µs di/dt, making it suitable for synchronous rectification and freewheeling in buck converters where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

IPP80N04S204AKSA1 is housed in a PG-TO220-3-1 package with isolated tab (drain-connected), offering mechanical robustness and standard mounting compatibility. The package supports 0.5 K/W thermal resistance from junction to case when mounted with proper torque and thermal interface material.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB80N04S204AKSA1 and IPI80N04S204AKSA1, IPP80N04S204AKSA1 provides identical electrical performance in a standardized TO-220 footprint - ideal for legacy designs, thermal testing fixtures, and applications needing proven mechanical mounting with screw-down heatsinks.

Availability

IPP80N04S204AKSA1 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, on-board battery protection, and electric power steering precharge circuits requiring stable component supply across extended product lifecycles.

Supply support for IPP80N04S204AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V–48 V automotive and industrial power systems.

FAQ

What is the maximum allowable gate-source voltage for IPP80N04S204AKSA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operating above ±20 V risks permanent gate oxide damage. For reliable PWM operation, gate drive should be clamped to 10–15 V with transient suppression to prevent overshoot beyond this limit during fast switching.

Does IPP80N04S204AKSA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 80 A continuous forward current rating, 0.9–1.3 V forward voltage at 80 A and 25 °C, 53–75 ns reverse recovery time, and 85–125 nC reverse recovery charge. These values are measured at V_R = 20 V, I_F = I_S, and di_F/dt = 100 A/µs, confirming suitability for freewheeling in buck and half-bridge topologies.

How does the thermal resistance of IPP80N04S204AKSA1 impact heatsink selection?

With a junction-to-case thermal resistance (R_thJC) of 0.5 K/W, the dominant thermal bottleneck is the interface between the TO-220 tab and heatsink. Using 0.1 mm thermal pad (k ≈ 1.5 W/m·K) and 0.5 N·m mounting torque, a 15 K/W heatsink keeps T_j ≤ 125 °C at 80 A continuous, assuming 25 °C ambient - enabling passive cooling in many automotive cabin applications.

Is IPP80N04S204AKSA1 suitable for use in synchronous rectification topologies?

While its body diode is optimized for robustness, the device is not recommended as a synchronous rectifier due to lack of specified reverse recovery softness or Q_rr optimization for zero-voltage switching. Its 580 pF C_rss and 45 ns t_r make it better suited for primary-side switching where diode conduction is brief and controlled by external timing.