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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S2L03AKSA1

Name: IPP80N04S2L03AKSA1
Brand: Infineon Technologies
SKU: IPP80N04S2L03AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N04S2L03AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S2L03AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

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Product details

Overview

IPP80N04S2L03AKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 100 °C, and ultra-low 3.1 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in automotive DC-DC converters and high-current motor control stages.

For engineers reviewing the IPP80N04S2L03AKSA1 datasheet, IPP80N04S2L03AKSA1 pinout, IPP80N04S2L03AKSA1 application, or IPP80N04S2L03AKSA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (R_thJC = 0.5 K/W), and AEC-Q101 qualification status for under-hood power switching.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its logic-level gate enables direct drive from microcontrollers without level-shifting, while the integrated body diode supports synchronous rectification and freewheeling with t_rr = 62–78 ns and Q_rr = 145–180 nC.

The MOSFET features a robust safe operating area (SOA) up to 200 V × 80 A at T_C = 25 °C with pulse width < 1 ms, and its thermal design supports junction-to-case heat transfer at 0.5 K/W - critical for compact heatsink integration in engine control units and battery disconnect modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) max @ V_GS = 10 V	3.1 mΩ - Enables ≤25 W conduction loss at 80 A, reducing heatsink size in high-current DC-DC stages.
I_D continuous @ T_C = 100 °C	80 A - Sustains full-rated current in engine bay environments without derating beyond 100 °C case temperature.
E_AS (single pulse)	810 mJ - Withstands inductive turn-off energy from solenoids or motors without failure, verified per JEDEC JESD24-1.
Q_g total	163–213 nC - Determines gate driver power requirement; enables <77 ns turn-off delay with 1.1 Ω gate resistor.
t_r/t_f	50 ns / 27 ns - Supports >500 kHz switching in synchronous buck converters with controlled EMI profile.
T_j max	175 °C - Allows operation in high-ambient under-hood locations without thermal shutdown in safety-critical modules.

Pinout & Package

IPP80N04S2L03AKSA1 is housed in PG-TO220-3-1 package: through-hole, isolated tab, standard TO-220 footprint with drain-connected metal tab for direct heatsinking. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Logic-level compatible (V_GS(th) = 1.2–2.0 V); requires ≤213 nC charge for full enhancement.
Pin 2 (Drain)	High-side or low-side power path	Internally connected to metal tab; electrically and thermally coupled to heatsink - must be isolated if floating topology used.
Pin 3 (Source)	Reference node for gate drive and current sensing	Common return for gate driver supply and shunt-based current monitoring; defines local ground reference for control IC.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit subjected to single-pulse inductive switching stress at rated I_D and V_DS - ensures robustness in unclamped inductive loads.
R_DS(on) @ 4.5 V	3.3–4.2 mΩ (SMD version spec; TO-220 variant comparable) - enables direct MCU GPIO drive in space-constrained modules.
MSL1 rating	Rated for peak reflow up to 260 °C - supports lead-free PCB assembly without moisture sensitivity concerns.
Green package	Lead-free, halogen-free construction compliant with RoHS and ELV directives - required for global automotive OEM sourcing.

Applications

Automotive Engine Control Unit (ECU) Power Stage

12 V Automotive DC-DC Converter

Use Scenario: High-current switching of fuel injector or ignition coil drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Low-side switch controlling inductive load current with fast turn-off (t_f = 27 ns) to minimize voltage overshoot.

Use Value: 810 mJ avalanche energy rating prevents failure during inductive kickback; 175 °C T_j max sustains operation near hot engine components.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5/3.3 V buck converter for ADAS camera modules.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300–500 kHz with minimal conduction loss (R_DS(on) = 3.1 mΩ).

Use Value: 0.5 K/W R_thJC enables direct heatsinking to small aluminum plates, eliminating need for forced air cooling.

Electric Power Steering (EPS) Motor Driver

Battery Disconnect Switch (BMS)

Use Scenario: Half-bridge leg in three-phase inverter driving 12 V EPS brushless motor.

IC Role / Device Role / Timing Role: Logic-level N-channel MOSFET enabling gate drive directly from MCU PWM outputs without external level shifters.

Use Value: V_GS(th) = 1.2–2.0 V ensures reliable turn-on even with 3.3 V IO rails; 80 A I_D supports peak motor currents up to 150 A pulsed.

Use Scenario: Main contactor replacement in 12 V battery management systems for start-stop and energy recovery.

IC Role / Device Role / Timing Role: Solid-state high-current disconnect switch with bidirectional blocking and controlled turn-on/turn-off timing.

Use Value: Integrated body diode with Q_rr = 145–180 nC minimizes reverse recovery loss during polarity reversal events in regenerative braking circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S2L03	Same die, PG-TO263-3-2 surface-mount package; R_thJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO-220.	Preferred for automated SMT assembly and higher power density; unsuitable for through-hole or manual repair.	Select when board space is constrained and reflow capability exists; verify thermal pad layout per Infineon AN2015-09.
IRF8721PbF	40 V, 75 A, R_DS(on) = 3.4 mΩ @ 10 V; not AEC-Q101 qualified; lower Q_g (110 nC) but no avalanche rating.	Suitable for industrial/commercial DC-DC, not automotive safety-critical systems.	Choose only for non-automotive designs where qualification and ruggedness are secondary to cost and gate drive simplicity.

Compared with IPB80N04S2L03 and IRF8721PbF, IPP80N04S2L03AKSA1 uniquely combines AEC-Q101 qualification, 810 mJ avalanche rating, and TO-220 mechanical robustness - making it the sole option for production automotive power stages requiring field-replaceable through-hole mounting and guaranteed transient survivability.

Availability

IPP80N04S2L03AKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, 12 V DC-DC converters, and battery disconnect switches requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPP80N04S2L03AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-current, high-temperature switching in automotive 12 V systems - emphasizing ruggedness, low R_DS(on), and qualification compliance over generic efficiency metrics.

FAQ

Is IPP80N04S2L03AKSA1 pin-compatible with IPB80N04S2L03?

No - IPP80N04S2L03AKSA1 uses PG-TO220-3-1 (through-hole) packaging, while IPB80N04S2L03 uses PG-TO263-3-2 (surface-mount). Pin numbering is identical (G-D-S), but mechanical mounting, thermal interface, and PCB footprint differ fundamentally. Board redesign is required for substitution.

What is the maximum recommended gate resistor value for 500 kHz switching?

For 500 kHz operation with 1.1 Ω gate resistor (per datasheet test condition), total switching time (t_d(off) + t_f) is 104 ns. To maintain <20% duty cycle loss, gate resistor should not exceed 2.2 Ω - verified via gate charge curve (Q_g = 213 nC max) and driver output impedance limits.

Does this MOSFET require a negative gate turn-off voltage?

No - the device has no requirement for negative V_GS. Its gate threshold voltage (1.2–2.0 V) and logic-level compatibility allow safe turn-off with 0 V gate drive. Negative bias is unnecessary and not specified in the datasheet for reliability or speed improvement.

Can IPP80N04S2L03AKSA1 replace IRFZ44N in automotive applications?

No - IRFZ44N lacks AEC-Q101 qualification, has higher R_DS(on) (17.5 mΩ), and no avalanche rating. Substitution would violate automotive functional safety requirements and increase conduction loss by >5×. IPP80N04S2L03AKSA1 is not a drop-in replacement due to differing SOA, qualification, and thermal performance.

IPP80N04S2L03AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 213 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S2L03AKSA1 FAQ

1.How can I place an order for IPP80N04S2L03AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S2L03AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S2L03AKSA1 reliable?

The price and inventory of IPP80N04S2L03AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S2L03AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N04S2L03AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S2L03AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S2L03AKSA1?

IPP80N04S2L03AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S2L03AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S2L03AKSA1?

For technical support, including IPP80N04S2L03AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S2L03AKSA1 requirements.

6.How does Aetrix verify that IPP80N04S2L03AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S2L03AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S2L03AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N04S2L03AKSA1?

All IPP80N04S2L03AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S2L03AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S2L03AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N04S2L03AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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