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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S303AKSA1

Name: IPP80N04S303AKSA1
Brand: Infineon Technologies
SKU: IPP80N04S303AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N04S303AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S303AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

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Product details

Overview

IPP80N04S303AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 3.2 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPP80N04S303AKSA1 datasheet, IPP80N04S303AKSA1 pinout, IPP80N04S303AKSA1 application, or IPP80N04S303AKSA1 equivalent, key selection criteria include R_DS(on) at 80 A, thermal resistance (R_thJC = 0.8 K/W), gate charge profile (Q_g = 83–110 nC), and avalanche energy rating (E_AS = 526 mJ).

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in hard-switched 12 V/24 V automotive and industrial power stages. Its 2.5–3.2 mΩ typical R_DS(on) enables high-efficiency operation under 80 A DC load with minimal heatsink requirement.

The MOSFET features a robust body diode with 1.0–1.3 V forward voltage at 80 A and 46 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 12 V/24 V battery systems with margin against load dump transients
R_DS(on) max	3.2 mΩ at V_GS = 10 V, I_D = 80 A - enables ≤2.5 W conduction loss at full rated current
I_D continuous	80 A at T_C = 25 °C - validated for sustained high-current operation with TO-220 thermal path
E_AS	526 mJ - withstands single-pulse inductive energy without failure in motor drive flyback events
Q_g	83–110 nC - determines gate driver power and switching speed trade-off in 100–200 kHz converters
R_thJC	0.8 K/W - allows direct junction-to-heatsink thermal path; enables 188 W P_tot at 25 °C case temperature
t_r/t_f	17 ns / 14 ns - supports fast switching with reduced overlap loss in hard-switched topologies

Pinout & Package

IPP80N04S303AKSA1 is housed in PG-TO220-3-1 package: through-hole, isolated tab, 3-pin layout with drain-connected tab for direct heatsinking. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≥6 V threshold (2.1–4.0 V typ) and 10 V for full R_DS(on)
Pin 2 (D)	Drain terminal (tab)	High-current output node; electrically connected to metal tab for low-inductance heatsink mounting
Pin 3 (S)	Source terminal	Reference node for gate drive; forms return path for 80 A load current and body diode conduction

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% unclamped inductive avalanche tested	Guarantees ruggedness in real-world inductive switching faults without derating
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free PCB assembly processes without moisture sensitivity concerns
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU and JESD22-A112
Optimized gate charge profile	Q_gd/Q_gs ratio ~0.7 enables stable Miller plateau control during high-di/dt switching

Applications

Automotive DC-DC Converter

Onboard Charger (OBC) Primary Switch

Use Scenario: Step-down conversion from 400 V battery to 12 V auxiliary supply in BEV/PHEV platforms.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–150 kHz with 80 A peak current.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 5 mΩ MOSFETs, improving system efficiency from 92% to 94.5%.

Use Scenario: Primary-side switching in two-phase interleaved AC-DC stage of 6.6 kW OBC.

IC Role / Device Role / Timing Role: Low-side switching element in LLC resonant half-bridge, handling 80 A pulsed drain current.

Use Value: 526 mJ E_AS rating ensures reliable operation during line-voltage surges and soft-start inrush events.

Industrial Motor Drive Inverter

12 V Battery Backup System

Use Scenario: 3-phase BLDC inverter for HVAC compressors in commercial refrigeration units.

IC Role / Device Role / Timing Role: Phase-leg low-side switch with integrated body diode conducting freewheeling current.

Use Value: 46 ns t_rr and 73 nC Q_rr minimize diode switching loss and commutation noise in 20 kHz PWM.

Use Scenario: Load-switching element in uninterruptible power supply (UPS) for telecom base stations.

IC Role / Device Role / Timing Role: Hot-swap and inrush-limiting MOSFET controlling 12 V/80 A backup rail activation.

Use Value: 175 °C maximum junction temperature enables operation in sealed enclosures without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S3-03	Same die, PG-TO263-3-2 package; R_thJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO-220	Better thermal performance in SMD layouts; unsuitable for through-hole mounting	Select when board space and automated assembly prioritize SMD over mechanical robustness
IPI80N04S3-03	Same die, PG-TO262-3-1 package; identical R_DS(on) and E_AS, but non-isolated tab	Lower cost alternative for non-isolated heatsink designs; requires insulating hardware	Select when thermal interface design permits non-isolated mounting and cost is critical

Compared with IPB80N04S3-03 and IPI80N04S3-03, IPP80N04S303AKSA1 offers mechanical isolation and ease of heatsink integration via TO-220, making it optimal for prototyping, service replacement, and medium-volume industrial power supplies where mounting flexibility outweighs SMD density gains.

Availability

IPP80N04S303AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, onboard charger primary switches, and industrial motor drive inverters requiring stable component supply across extended product lifecycles.

Supply support for IPP80N04S303AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T power transistor product line, engineered specifically for high-current, high-reliability 12 V/24 V/48 V automotive and industrial switching applications demanding low R_DS(on), rugged avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPP80N04S303AKSA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) with margin; 6–8 V is usable but increases R_DS(on) by ~25%. Gate driver circuits must include clamping or Zener protection to prevent overshoot during fast switching.

Is IPP80N04S303AKSA1 suitable for synchronous rectification in a 400 V to 12 V isolated DC-DC converter?

No - its 40 V V_DS rating makes it unsafe for secondary-side synchronous rectification in 400 V input converters. It is designed for low-voltage side switching only. For such topologies, use 100 V+ rated MOSFETs like IRF1407 or IPP040N10N5.

Does IPP80N04S303AKSA1 require a heatsink in continuous 80 A operation?

Yes - at 80 A and 10 V V_GS, conduction loss is ~20.5 W (using 2.55 mΩ typical R_DS(on)). With R_thJC = 0.8 K/W and ambient at 50 °C, junction temperature exceeds 175 °C without heatsink. A minimum 0.5 K/W heatsink is required to maintain T_j ≤ 150 °C under full load.

How does the body diode performance compare to discrete Schottky diodes in freewheeling applications?

The integrated body diode has V_SD = 1.0–1.3 V at 80 A and t_rr = 46 ns - higher forward drop than 0.5 V Schottky diodes but lower reverse recovery charge (Q_rr = 73 nC). In <200 kHz hard-switched freewheeling, it eliminates external diode count and layout complexity, though efficiency is ~3% lower than ideal Schottky replacement.

IPP80N04S303AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S303AKSA1 FAQ

1.How can I place an order for IPP80N04S303AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S303AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S303AKSA1 reliable?

The price and inventory of IPP80N04S303AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S303AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N04S303AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S303AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S303AKSA1?

IPP80N04S303AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S303AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S303AKSA1?

For technical support, including IPP80N04S303AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S303AKSA1 requirements.

6.How does Aetrix verify that IPP80N04S303AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S303AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S303AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N04S303AKSA1?

All IPP80N04S303AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S303AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S303AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N04S303AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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