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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S3-04

Name: IPP80N04S3-04
Brand: Infineon Technologies
SKU: IPP80N04S3-04
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N04S3-04

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S3-04.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,548

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Product details

Overview

IPP80N04S3-04 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 3.8 mΩ max R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It is AEC-Q101 qualified, 100% avalanche tested, and supports high-current switching in motor control and DC-DC converters.

For engineers reviewing the IPP80N04S3-04 datasheet, IPP80N04S3-04 pinout, IPP80N04S3-04 application, or IPP80N04S3-04 equivalent, key selection criteria include its 1.1 K/W junction-to-case thermal resistance, 320 A pulsed drain capability, 290 mJ single-pulse avalanche energy, and gate plateau voltage of 5.6 V - all critical for robust high-power switching design.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit, enabling high-efficiency synchronous rectification and PWM motor drive. Its 2.1–4.0 V gate threshold voltage ensures stable turn-on under noisy automotive supply conditions.

The integrated body diode exhibits 0.95–1.3 V forward voltage at 80 A and 35 ns reverse recovery time with 35 nC Q_rr, supporting fast freewheeling in half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage compatible with 12 V/24 V automotive battery systems
R_DS(on) max	3.8 mΩ at V_GS = 10 V - enables ≤3 W conduction loss at 80 A, reducing heatsink requirements
I_D continuous	80 A at T_C = 25 °C - supports high-current load switching without derating in forced-air-cooled designs
E_AS	290 mJ single-pulse - withstands inductive energy dump in motor phase-leg fault conditions
Q_g total	60–80 nC - determines gate driver power requirement and switching speed trade-off
t_r/t_f	12 ns / 10 ns - enables >1 MHz switching in high-frequency DC-DC converters
R_thJC	1.1 K/W - allows direct thermal interface to heatsink, simplifying thermal management

Pinout & Package

IPP80N04S3-04 is housed in PG-TO220-3-1, a through-hole package with isolated tab (drain-connected), standard lead pitch (2.54 mm), and JEDEC-compliant outline for mechanical compatibility with legacy TO-220 sockets and heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage current drive
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% unclamped inductive switching (UIS) tested	Guarantees robustness against voltage overshoot during inductive load interruption
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU
175 °C maximum operating temperature	Enables operation in engine bay environments without thermal shutdown
MSL1 rating (260 °C peak reflow)	Supports standard lead-free SMT assembly processes despite being a through-hole part

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 12 V BLDC fans and radiator cooling pumps in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at 20–50 kHz.

Use Value: 3.8 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 6 mΩ MOSFETs, lowering thermal load on ECU housing.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V isolated buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: High-current, low-V_DS power switch operating in hard-switched mode.

Use Value: 290 mJ E_AS withstands transformer leakage inductance energy, eliminating need for snubber networks.

On-Board Charger (OBC) Input Stage

Electric Power Steering (EPS) H-Bridge

Use Scenario: AC-DC front-end switching in bidirectional OBC modules for PHEVs.

IC Role / Device Role / Timing Role: Bridge arm switch handling 80 A RMS input current at 50–100 kHz PWM frequency.

Use Value: 320 A pulsed drain rating accommodates surge currents during grid synchronization transients.

Use Scenario: Half-bridge driver for 3-phase EPS assist motor with regenerative braking.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode for freewheeling.

Use Value: 35 ns t_rr and 35 nC Q_rr minimize switching losses during rapid polarity reversal in torque ripple suppression.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S3-05	R_DS(on) max = 4.5 mΩ; higher gate charge (Q_g = 85 nC)	Slightly lower efficiency at high current; better gate drive margin at low V_GS	Select when gate drive voltage stability is marginal or layout parasitics dominate switching loss
IPB80N04S3-04	Same die, PG-TO263-3-2 surface-mount package; identical R_DS(on), Q_g, and thermal specs	Requires PCB rework for SMD assembly; no through-hole mounting option	Select for automated production where board space and thermal via density support D²PAK footprint

Compared with IPP80N04S3-05, the -04 offers lower conduction loss and faster switching; compared with IPB80N04S3-04, it provides mechanical mounting flexibility and simplified heatsinking but requires through-hole assembly infrastructure.

Availability

IPP80N04S3-04 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and on-board charger (OBC) input stages requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPP80N04S3-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-reliability automotive power switching applications demanding AEC-Q101 compliance and robust avalanche performance.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPP80N04S3-04 supports continuous operation up to 175 °C junction temperature, verified per AEC-Q101 stress testing. Derating begins above T_j = 150 °C, and thermal design must ensure R_thJC + R_thCS + R_thSA ≤ (175 − T_A) / P_diss to maintain reliability.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the integrated body diode has 35 ns reverse recovery time and 35 nC Q_rr, enabling efficient freewheeling at ≤500 kHz. However, for optimal efficiency above 200 kHz, external Schottky or GaN FETs may further reduce switching loss.

Does this MOSFET require a gate resistor for safe switching?

A gate resistor (typically 5–22 Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 170–250 pF) and PCB inductance. Without it, overshoot exceeding ±20 V V_GS rating may cause premature gate oxide failure.

Can IPP80N04S3-04 replace IPP80N04S3-05 in existing designs?

Yes - both share identical pinout, thermal profile, and gate drive requirements. The -04's lower R_DS(on) (3.8 mΩ vs. 4.5 mΩ) improves efficiency but may increase dV/dt-induced shoot-through risk in half-bridge layouts if gate drive strength or layout parasitics are unchanged.

IPP80N04S3-04 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S3-04 FAQ

1.How can I place an order for IPP80N04S3-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S3-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S3-04 reliable?

The price and inventory of IPP80N04S3-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S3-04 is usually 5 days.

3.What payment methods are accepted for IPP80N04S3-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S3-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S3-04?

IPP80N04S3-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S3-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S3-04?

For technical support, including IPP80N04S3-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S3-04 requirements.

6.How does Aetrix verify that IPP80N04S3-04 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S3-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S3-04 meets industry standards.

7.What is the process for return or replacement of IPP80N04S3-04?

All IPP80N04S3-04 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S3-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S3-04 part is unused and in its original packaging.

Return procedure for IPP80N04S3-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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