Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S306AKSA1

Name: IPP80N04S306AKSA1
Brand: Infineon Technologies
SKU: IPP80N04S306AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP80N04S306AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S306AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,929

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP80N04S306AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 5.4 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C, is AEC-Q101 qualified, 100% avalanche tested, and used in high-current DC-DC converters and motor control stages.

For engineers reviewing the IPP80N04S306AKSA1 datasheet, IPP80N04S306AKSA1 pinout, IPP80N04S306AKSA1 application, or IPP80N04S306AKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, single-pulse avalanche energy (125 mJ), thermal resistance (R_thJC = 1.5 K/W), and gate charge profile (Q_g = 36–47 nC) for switching loss estimation.

Technical Context

This OptiMOS™-T power transistor uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive and industrial power stages. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS drive compatibility, while its 100% avalanche-tested ruggedness supports inductive load switching without external snubbers.

The device integrates a fast-recovery body diode with t_rr = 34 ns and Q_rr = 36 nC, enabling efficient synchronous rectification and freewheeling in half-bridge topologies. Thermal design is supported by a low junction-to-case resistance (1.5 K/W) and validated operation across –55 °C to +175 °C ambient range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V system-level designs with margin against transients.
R_DS(on) max	5.4 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 80 A, critical for thermally constrained PCB layouts.
I_D cont	80 A at T_C = 25 °C - Supports high-current motor drivers and battery protection circuits without forced cooling.
E_AS	125 mJ - Confirmed single-pulse avalanche capability allows safe operation under inductive turn-off stress without derating.
Q_g	36–47 nC - Determines gate driver power requirement and switching speed trade-off in PWM applications.
t_r/t_f	10 ns / 10 ns - Fast edge rates reduce switching transition time, lowering dynamic losses in high-frequency SMPS.
R_thJC	1.5 K/W - Enables direct heatsink mounting for predictable thermal management in TO-220-based power modules.

Pinout & Package

IPP80N04S306AKSA1 is housed in PG-TO220-3-1 package: insulated tab, vertical lead orientation, lead-free and RoHS-compliant. The case serves as the drain terminal; source and gate are on leads 1 and 2 respectively.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Source	Low-side reference node; connects directly to PCB ground plane or source return path in high-current paths.
Lead 2 (center)	Gate	High-impedance control input; requires <47 nC charge and <20 V rating; sensitive to ESD.
Lead 3 (right) + Tab	Drain	High-current power output node; electrically connected to metal tab for thermal and electrical conduction to heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis systems requiring zero defect reliability over 15-year lifetime.
100% avalanche tested	Each unit passes single-pulse E_AS stress test at 125 mJ, eliminating need for external clamping in inductive switching.
MSL1 reflow rating	Suitable for standard Pb-free SMT reflow profiles up to 260 °C peak, compatible with automated assembly lines.
Body diode t_rr = 34 ns	Reduces reverse recovery loss and EMI in synchronous buck and H-bridge configurations.
R_DS(on) temp coefficient	Positive TC ensures current sharing stability in paralleled configurations without external ballasting.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 5 V/3.3 V step-down conversion in engine control units and ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck regulator operating at 200–500 kHz.

Use Value: Low R_DS(on) minimizes conduction loss; fast t_r/t_f reduces switching loss at high frequency.

Use Scenario: Half-bridge leg in 24 V brushless DC motor controllers for HVAC actuators and power seats.

IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode for freewheeling current recirculation.

Use Value: 34 ns t_rr and 36 nC Q_rr limit diode switching loss and voltage overshoot during commutation.

On-Board Battery Protection

Server PSU OR-ing Circuits

Use Scenario: Reverse polarity and overcurrent protection in 48 V mild-hybrid battery management systems.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as bidirectional current-controlled switch.

Use Value: 175 °C max T_j and AEC-Q101 qualification ensure reliability under sustained overload conditions.

Use Scenario: Hot-swap and redundancy control in 12 V intermediate bus architecture of cloud server PSUs.

IC Role / Device Role / Timing Role: Low-loss OR-ing FET replacing Schottky diodes to reduce forward voltage drop.

Use Value: 5.4 mΩ R_DS(on) cuts conduction loss by >70% vs. 0.4 V Schottky, improving efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S3-06	PG-TO263-3-2 package; lower R_thJA (40 K/W on 6 cm² PCB); identical R_DS(on) and avalanche rating.	Better suited for surface-mount, space-constrained PCBs with thermal pads.	Select when board area is limited and thermal pad layout is feasible.
IPI80N04S3-06	PG-TO262-3-1 package; same die, higher creepage distance; identical electrical specs.	Preferred for through-hole mounting where mechanical robustness and isolation are prioritized.	Select for legacy through-hole production or high-vibration environments requiring stronger lead retention.

Compared with IPB80N04S3-06 and IPI80N04S3-06, IPP80N04S306AKSA1 offers optimal cost-performance balance for manual or wave-soldered TO-220 assemblies, with proven thermal interface behavior and standardized heatsink compatibility.

Availability

IPP80N04S306AKSA1 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, battery protection, and server OR-ing applications requiring stable component supply and long-term lifecycle support.

Supply support for IPP80N04S306AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line-engineered for high-efficiency, high-reliability power switching in 12 V and 48 V automotive and industrial systems with stringent thermal and ruggedness requirements.

FAQ

What is the maximum allowable gate-source voltage for IPP80N04S306AKSA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks irreversible gate oxide damage. Recommended drive is 10 V for full enhancement with margin; 6 V is minimum for guaranteed R_DS(on) compliance per datasheet curves. Gate resistors must be selected to limit dV/dt-induced ringing without compromising switching speed.

Does IPP80N04S306AKSA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to dampen parasitic oscillation and control dI/dt during turn-on/off. For 80 A switching at 200–500 kHz, a 10 Ω series resistor is typical; values between 4.7 Ω and 22 Ω balance EMI suppression and switching loss. Layout-dependent stray inductance may necessitate ferrite beads in addition to resistance.

Can IPP80N04S306AKSA1 be paralleled with identical units for higher current handling?

Yes-its positive R_DS(on) temperature coefficient enables inherent current sharing. Use matched gate drive paths, symmetrical PCB traces, and common heatsinking. Derate total current by 15% for thermal imbalance; verify junction temperature with IR imaging or thermocouples under worst-case load and ambient conditions.

Is the body diode suitable for continuous freewheeling in a synchronous buck converter?

Yes-the integrated body diode is rated for 80 A continuous forward current and exhibits 34 ns reverse recovery time with 36 nC Q_rr. For best efficiency, use synchronous rectification with complementary low-side FET drive; avoid relying solely on body diode conduction above 20% duty cycle due to V_SD = 1.0–1.3 V forward drop.

IPP80N04S306AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 52µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S306AKSA1 FAQ

1.How can I place an order for IPP80N04S306AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S306AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S306AKSA1 reliable?

The price and inventory of IPP80N04S306AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S306AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N04S306AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S306AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S306AKSA1?

IPP80N04S306AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S306AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S306AKSA1?

For technical support, including IPP80N04S306AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S306AKSA1 requirements.

6.How does Aetrix verify that IPP80N04S306AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S306AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S306AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N04S306AKSA1?

All IPP80N04S306AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S306AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S306AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N04S306AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.