Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S3H4AKSA1

Name: IPP80N04S3H4AKSA1
Brand: Infineon Technologies
SKU: IPP80N04S3H4AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP80N04S3H4AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S3H4AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,711

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP80N04S3H4AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified power MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 4.5 mΩ max R_DS(on) at 10 V V_GS, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor control stages.

For engineers reviewing the IPP80N04S3H4AKSA1 datasheet, IPP80N04S3H4AKSA1 pinout, IPP80N04S3H4AKSA1 application, or IPP80N04S3H4AKSA1 equivalent, key selection criteria include its AEC-Q101 qualification, 100% single-pulse avalanche tested capability (370 mJ), low gate charge (Q_g = 46–60 nC), and thermal resistance of 1.3 K/W (junction-to-case).

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive and industrial power stages. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The integrated body diode exhibits 0.95–1.3 V forward voltage at 80 A and 25 °C, with 35 ns reverse recovery time and 35 nC Q_rr, supporting efficient synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V battery systems and 24 V industrial rails.
R_DS(on) max	4.5 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, reducing heatsink requirements.
I_D cont.	80 A at T_C = 25 °C - Sustains high-current loads without derating in forced-air or moderate heatsink conditions.
E_AS	370 mJ - Confirmed single-pulse avalanche energy supports reliable operation under inductive load turn-off stress.
Q_g	46–60 nC - Low total gate charge reduces driver power demand and switching transition time in high-frequency SMPS.
R_thJC	1.3 K/W - Enables direct thermal coupling to heatsinks for stable junction temperature control up to 175 °C.
V_GS(th)	2.1–4.0 V - Ensures clean turn-on with standard 3.3 V or 5 V logic drivers while avoiding spurious activation.

Pinout & Package

IPP80N04S3H4AKSA1 is housed in PG-TO220-3-1: a through-hole, isolated-tab package with copper leadframe, RoHS-compliant matte tin plating, and MSL1 rating for lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heat sink interface	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance source connection critical for minimizing shoot-through risk in half-bridge configurations.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD-requires gate resistor and TVS protection.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at I_AS = 80 A, ensuring robustness against inductive switching failures.
OptiMOS™-T trench technology	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 100–500 kHz DC-DC stages.
Green package	Halogen-free, RoHS-compliant construction with no antimony trioxide or beryllium compounds.
Integrated body diode	Optimized for low Q_rr (35 nC) and fast t_rr (35 ns), enabling use in synchronous rectifier and bidirectional switch roles.

Applications

Automotive Body Control Module (BCM)

Industrial 24 V DC Motor Driver

Use Scenario: High-side load switching for headlight, fog lamp, and HVAC blower control in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Main power switch handling up to 80 A peak inductive loads with integrated freewheeling diode.

Use Value: Eliminates need for external flyback diode; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.

Use Scenario: H-bridge phase-leg switch in brushless DC motor drives for conveyor systems and pumps.

IC Role / Device Role / Timing Role: Low-side or high-side switching element with fast turn-off (t_f = 10 ns) and low R_DS(on) to minimize I²R losses.

Use Value: Enables >96% efficiency at full load with reduced thermal footprint versus discrete alternatives.

Server PSU OR-ing FET

Telecom 48 V Intermediate Bus Converter

Use Scenario: Hot-swap and redundancy management in dual-input 12 V server power supplies.

IC Role / Device Role / Timing Role: Reverse-polarity protected OR-ing MOSFET operating in linear region during inrush, then fully enhanced.

Use Value: Low V_GS(th) and tight distribution enable precise gate control for smooth current sharing between parallel rails.

Use Scenario: Primary-side synchronous rectifier in 48 V to 12 V isolated DC-DC modules for base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side power switch with low Q_gd/Q_gs ratio (0.67 typ.) for reduced Miller-induced shoot-through risk.

Use Value: 3.6–4.5 mΩ R_DS(on) in SMD variant enables <0.5 W conduction loss at 60 A output current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S3H4	Same die, PG-TO263-3-2 surface-mount package; R_DS(on) max = 4.5 mΩ (SMD version); R_thJA = 40 K/W on 6 cm² PCB.	Requires PCB layout redesign; better suited for automated assembly and higher power density designs.	Select for space-constrained, high-volume SMT production where thermal performance on board is prioritized.
IPI80N04S3H4	Same die, PG-TO262-3-1 package; identical R_DS(on), I_D, and avalanche rating; leadform differs for vertical mounting.	Compatible with TO-220 footprint but non-isolated tab; requires different mechanical mounting and isolation strategy.	Select when mechanical compatibility with TO-220 sockets is needed but isolation is not required.

Compared with IPB80N04S3H4 and IPI80N04S3H4, IPP80N04S3H4AKSA1 offers through-hole mounting with electrically isolated tab-critical for high-voltage isolation in industrial power supplies-while retaining identical silicon performance and AEC-Q101 qualification.

Availability

IPP80N04S3H4AKSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and telecom power conversion requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP80N04S3H4AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability power switching in 12 V and 24 V automotive and industrial systems where low R_DS(on) × Q_g and rugged avalanche behavior are essential.

FAQ

Is IPP80N04S3H4AKSA1 pin-compatible with standard TO-220 N-channel MOSFETs?

Yes-it uses the industry-standard PG-TO220-3-1 footprint with Drain (Tab), Source, and Gate pinout order. The isolated tab allows direct heatsink mounting without insulation hardware, unlike non-isolated TO-220 variants. Mechanical dimensions match JEDEC TO-220AB specifications.

What is the maximum recommended gate resistor value for hard-switching at 200 kHz?

For 200 kHz operation with 80 A load, a 4.7 Ω gate resistor is recommended to limit peak gate current to ~2.1 A while maintaining t_r/t_f < 20 ns. Lower values (2.2–3.3 Ω) may be used with active gate drivers capable of ≥3 A peak sourcing/sinking.

Does this MOSFET require a negative gate turn-off voltage in bridge configurations?

No-its V_GS(th) range (2.1–4.0 V) and low gate leakage (<100 nA) allow safe operation with 0 V turn-off in half-bridge or full-bridge topologies. Negative bias is unnecessary unless operating near maximum dV/dt (>50 V/ns) in noisy environments.

Can IPP80N04S3H4AKSA1 replace older IPP80N04S3LXKSA1 devices?

Yes-H4 revision improves R_DS(on) by ~12% (vs. 5.1 mΩ max in L version), reduces Q_g by ~10%, and adds 100% avalanche testing. Pinout, package, and thermal specs are identical, enabling drop-in replacement with measurable efficiency gain in existing designs.

IPP80N04S3H4AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 65µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S3H4AKSA1 FAQ

1.How can I place an order for IPP80N04S3H4AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S3H4AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S3H4AKSA1 reliable?

The price and inventory of IPP80N04S3H4AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S3H4AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N04S3H4AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S3H4AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S3H4AKSA1?

IPP80N04S3H4AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S3H4AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S3H4AKSA1?

For technical support, including IPP80N04S3H4AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S3H4AKSA1 requirements.

6.How does Aetrix verify that IPP80N04S3H4AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S3H4AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S3H4AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N04S3H4AKSA1?

All IPP80N04S3H4AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S3H4AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S3H4AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N04S3H4AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…