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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S403AKSA1

Name: IPP80N04S403AKSA1
Brand: Infineon Technologies
SKU: IPP80N04S403AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N04S403AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S403AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3-1

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Product details

Overview

IPP80N04S403AKSA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 3.3 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in automotive DC-DC converters and motor control stages.

For engineers reviewing the IPP80N04S403AKSA1 datasheet, IPP80N04S403AKSA1 pinout, IPP80N04S403AKSA1 application, or IPP80N04S403AKSA1 equivalent, key selection criteria include R_DS(on) at elevated temperature, single-pulse avalanche energy (200 mJ), gate charge profile (Q_g = 51–66 nC), and thermal resistance (R_thJC = 1.6 K/W).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-duty-cycle 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with standard 5 V and 12 V logic, while its 3.3 mΩ on-resistance supports continuous 80 A drain current at T_C = 25 °C.

The device integrates a fast-recovery body diode (t_rr = 43 ns, Q_rr = 44 nC) and is fully characterized for unclamped inductive switching (UIS), with 200 mJ single-pulse avalanche energy at I_D = 40 A - critical for load dump and motor freewheeling protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients.
R_DS(on) (max)	3.3 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, reducing heatsink requirements.
I_D (continuous)	80 A at T_C = 25 °C - Sustained high-current capability limited by bondwire integrity, not die thermal limit.
E_AS	200 mJ (I_D = 40 A) - Confirmed single-pulse avalanche ruggedness for inductive turn-off stress without failure.
Q_g	51–66 nC - Gate charge magnitude directly impacts switching loss and required driver peak current (≥2 A typical).
t_r/t_f	12 ns / 16 ns - Fast edge rates support >100 kHz PWM operation with minimal switching transition loss.
R_thJC	1.6 K/W - Junction-to-case thermal resistance enables direct mounting to heatsink for efficient power dissipation.

Pinout & Package

IPP80N04S403AKSA1 uses the PG-TO220-3-1 package: through-hole, 3-pin, isolated tab (drain-connected), with standard TO-220 footprint and mechanical mounting hole. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Primary return path for load current; connects to PCB ground plane or source rail.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring low-inductance routing and gate resistor (typically 3.5 Ω) for controlled switching.
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be thermally and electrically connected to heatsink or copper pour.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, body electronics, and ADAS power stages.
175 °C operating temperature	Enables reliable operation in under-hood environments without derating at ambient up to 125 °C.
100% avalanche tested	Each unit undergoes UIS stress screening - ensures field robustness against inductive kickback.
Green Product (RoHS compliant)	Lead-free and halogen-free construction meets EU Directive 2011/65/EU and automotive ELV requirements.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free PCB assembly processes without moisture sensitivity concerns.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) H-Bridge

Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck conversion for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in high-side or low-side position of multiphase buck regulator.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 5 mΩ devices, improving full-load efficiency to >94%.

Use Scenario: Bidirectional motor drive in column-assist EPS systems with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration handling 60–80 A peak motor current.

Use Value: 200 mJ avalanche energy withstands flyback energy during rapid deceleration without external snubbers.

Start-Stop Battery Management

Commercial Vehicle Lighting Control

Use Scenario: Load switching and reverse polarity protection in 24 V start-stop battery systems.

IC Role / Device Role / Timing Role: High-current electronic fuse and hot-swap controller in main battery distribution module.

Use Value: 80 A continuous rating and 320 A pulsed current support handle cranking surges and alternator load dumps.

Use Scenario: PWM dimming and overcurrent protection for LED headlamps and DRL modules.

IC Role / Device Role / Timing Role: Low-side PWM switch controlling 40–60 A LED strings with 100–500 Hz modulation.

Use Value: Fast 12 ns rise time ensures precise duty-cycle control and minimal thermal spread across LED array.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S4-03	PG-TO263-3-2 (D²PAK) package; R_DS(on) max = 3.3 mΩ same, but lower R_thJA (40 K/W with 6 cm² copper) due to surface-mount thermal path.	Better suited for space-constrained SMD layouts; requires reflow-compatible PCB design.	Select for automated assembly and improved thermal performance on large copper areas.
IPI80N04S4-03	PG-TO262-3-1 (I²PAK) package; identical R_DS(on) and ratings, but higher R_thJC (1.8 K/W) and larger creepage distance.	Preferred where isolation between high-voltage and low-voltage sections is critical (e.g., chassis-grounded drain).	Select when enhanced creepage/clearance or through-hole mechanical stability outweighs minor thermal penalty.

Compared with IPP80N04S403AKSA1, IPB80N04S4-03 offers superior board-level thermal management in SMD designs, while IPI80N04S4-03 provides greater isolation margin in high-reliability through-hole applications - both retain identical electrical performance and AEC-Q101 qualification.

Availability

IPP80N04S403AKSA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, start-stop battery management, and commercial vehicle lighting control requiring stable component supply across multi-year production cycles.

Supply support for IPP80N04S403AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, low-voltage automotive power stages where conduction loss, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPP80N04S403AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended drive range is 0 V to 10 V for full enhancement, with 5.8 V gate plateau voltage confirmed in gate charge curves - ensuring stable turn-on above threshold.

Does IPP80N04S403AKSA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 80 A continuous forward current rating and 320 A pulsed capability. Key specs include V_SD = 0.9–1.3 V at I_F = 80 A and T_j = 25 °C, t_rr = 43 ns, and Q_rr = 44 nC - enabling efficient freewheeling in synchronous rectifiers and H-bridges.

Can IPP80N04S403AKSA1 be used in parallel configurations?

Yes, its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherently stable current sharing. Parallel operation requires matched gate drive layout, identical trace lengths, and thermal coupling to ensure uniform junction temperature - verified in application note AN2015-07.

Is IPP80N04S403AKSA1 suitable for 48 V mild-hybrid systems?

No - its 40 V V_DS rating is insufficient for 48 V nominal systems with load dump transients exceeding 60 V. For 48 V applications, Infineon's OptiMOS™ 5 60 V or 75 V families (e.g., IPP60R040C7) are recommended alternatives with appropriate voltage margin.

IPP80N04S403AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 53µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S403AKSA1 FAQ

1.How can I place an order for IPP80N04S403AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S403AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S403AKSA1 reliable?

The price and inventory of IPP80N04S403AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S403AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N04S403AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S403AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S403AKSA1?

IPP80N04S403AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S403AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S403AKSA1?

For technical support, including IPP80N04S403AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S403AKSA1 requirements.

6.How does Aetrix verify that IPP80N04S403AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S403AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S403AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N04S403AKSA1?

All IPP80N04S403AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S403AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S403AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N04S403AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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