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Infineon Technologies IPP80N06S205AKSA1

Part No.:
IPP80N06S205AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP80N06S205AKSA1.pdf
Description:
MOSFET N-CH 55V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:5,156

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Product details

Overview

IPP80N06S205AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO220-3-1 package, rated for 55 V VDS, 80 A continuous drain current at TC = 25 °C, and ultra-low 4.8 mΩ max RDS(on) at VGS = 10 V. It operates up to 175 °C, is 100% avalanche tested, and used in high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the IPP80N06S205AKSA1 datasheet, IPP80N06S205AKSA1 pinout, IPP80N06S205AKSA1 application, or IPP80N06S205AKSA1 equivalent, key selection criteria include RDS(on) at 80 A, thermal resistance (RthJC = 0.5 K/W), avalanche energy (EAS = 810 mJ), diode forward voltage (VSD = 0.9–1.3 V), and AEC-Q101 qualification status.

Technical Context

This OptiMOS® device uses trench-gate silicon technology optimized for low conduction and switching losses in high-current, medium-voltage power stages. Its gate charge profile (Qg = 130–170 nC, Qgd = 53–80 nC) supports fast, controlled turn-on/turn-off with minimal Miller-induced shoot-through risk.

The integrated body diode exhibits trr = 60–75 ns and Qrr = 130–160 nC under defined conditions (VR = 30 V, dIF/dt = 100 A/µs), enabling reliable synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage before breakdown; defines use in ≤48 V nominal systems with margin.
RDS(on) max4.8 mΩ at VGS = 10 V, ID = 80 A - Enables <1.5 W conduction loss at full load in 12 V/48 V bus applications.
ID continuous80 A at TC = 25 °C - Supported by robust bondwire and thermal path; derates to ~50 A at TC = 100 °C.
EAS810 mJ - Single-pulse avalanche capability ensures ruggedness against inductive switching transients.
RthJC0.5 K/W - Junction-to-case thermal resistance enables high-power dissipation with standard heatsinking.
VGS(th)2.1–4.0 V - Threshold range allows reliable turn-on with 5 V logic-level gate drivers and noise immunity.
trr60–75 ns - Fast reverse recovery minimizes switching loss and EMI in synchronous buck/flyback designs.

Pinout & Package

IPP80N06S205AKSA1 is housed in a PG-TO220-3-1 package with isolated tab (drain-connected), featuring through-hole mounting and direct heatsink interface. The case serves as the drain terminal, enabling low-inductance, high-current PCB layout.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal of N-channel MOSFETLow-side reference node; connects to ground or low-side switch node in half-bridge configurations.
Pin 2 (Gate)Control input for channel conductionHigh-impedance input requiring <170 nC total gate charge; sensitive to ESD and ringing without proper RC snubbing.
Pin 3 (Drain / Tab)Main current-carrying output terminalInternally connected to metal tab; electrically active and thermally critical-must be insulated from heatsink unless referenced to system ground.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche testedEach unit undergoes single-pulse avalanche stress at rated ID and VDS, ensuring field reliability under inductive fault conditions.
Ultra-low RDS(on)4.8 mΩ max enables >96% efficiency in 48 V/80 A DC-DC stages with minimal thermal footprint.
175 °C operating junctionSupports operation in engine bay or under-hood environments without derating below ambient extremes.
Green (lead-free) packageComplies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 rating for lead-free reflow up to 260 °C.

Applications

Automotive DC-DC ConvertersIndustrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional DC-DC conversion in 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck-boost topology operating at 100–200 kHz.

Use Value: Low RDS(on) and fast trr reduce conduction and switching losses, improving system efficiency by ≥1.2% over legacy 6.5 mΩ devices.

Use Scenario: Inverter stage for 3 kW brushless DC motor in HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg, driven by isolated gate driver.

Use Value: 175 °C Tj rating and 810 mJ EAS ensure safe operation during overload and short-circuit events without thermal shutdown.

Server VRMsRenewable Energy Inverters

Use Scenario: High-current point-of-load regulation for CPU/GPU power delivery in AI servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter with 500 kHz+ switching frequency.

Use Value: Optimized Qgd/Qgs ratio (≈2.0) enables clean, jitter-free turn-off and reduces cross-conduction risk in paralleled phases.

Use Scenario: MPPT boost stage in residential solar microinverters handling up to 1.2 kW per string.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter with 65 kHz switching.

Use Value: Avalanche ruggedness eliminates need for external clamping diodes, reducing BOM count and board area by 15%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N06S205AKSA1PG-TO263-3-2 package; identical die, lower RthJA on PCB (40 K/W vs 62 K/W)Better suited for surface-mount, space-constrained PCBs with 6 cm² copper coolingSelect when thermal performance on FR4 is prioritized over through-hole assembly.
IPP80N06S4L05AKSA1Logic-level gate (VGS(th) = 1.0–2.2 V); higher RDS(on) (5.5 mΩ max); same packageEnables direct drive from 3.3 V microcontrollers but sacrifices conduction efficiency at high currentSelect only when gate drive voltage is limited to ≤5 V and peak current <60 A.

Compared with IPB80N06S205AKSA1, the SMD variant offers superior PCB thermal management but requires reflow-compatible layout; versus IPP80N06S4L05AKSA1, the original delivers 14% lower conduction loss at 80 A but demands ≥6 V gate drive for full enhancement.

Availability

IPP80N06S205AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for IPP80N06S205AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power transistor product line, engineered specifically for high-current, medium-voltage switching in automotive and industrial power conversion where efficiency, ruggedness, and temperature resilience are critical.

FAQ

Is IPP80N06S205AKSA1 pin-compatible with IPP80N06S205?

Yes-IPP80N06S205AKSA1 and IPP80N06S205 share identical PG-TO220-3-1 mechanical outline, pin assignment, and electrical specifications. The "KSA1" suffix denotes Infineon's standard tape-and-reel packaging and RoHS-compliant finish; no functional or layout differences exist.

What is the maximum recommended gate resistor value for reliable switching?

For 100–200 kHz operation with minimal overshoot, a 4.7 Ω gate resistor is recommended when driving from a 10 V source. This balances switching speed (td(on) ≈ 18 ns, tf ≈ 20 ns) and gate oscillation damping, especially given its 5110 pF Ciss and 280 pF Crss.

Does this MOSFET require a negative gate turn-off voltage?

No-IPP80N06S205AKSA1 has no requirement for negative VGS during turn-off. Its VGS(th) range (2.1–4.0 V) and low Crss allow clean commutation with 0 V gate drive; however, a small negative bias (–2 V) may improve noise immunity in high-dI/dt environments.

Can it replace older IPP80N06S2-05 parts in existing designs?

Yes-IPP80N06S205AKSA1 is a direct replacement for IPP80N06S2-05 (same die, same package, same marking "2N0605"). It maintains identical maximum ratings, thermal characteristics, and dynamic parameters, and adds MSL1 reflow compatibility and updated green packaging.

IPP80N06S205AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5110 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP80N06S205AKSA1 FAQ

1.How can I place an order for IPP80N06S205AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N06S205AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S205AKSA1 reliable?

The price and inventory of IPP80N06S205AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S205AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N06S205AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S205AKSA1 transactions.

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4.How is shipping managed for IPP80N06S205AKSA1?

IPP80N06S205AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N06S205AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S205AKSA1?

For technical support, including IPP80N06S205AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S205AKSA1 requirements.

6.How does Aetrix verify that IPP80N06S205AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S205AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S205AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N06S205AKSA1?

All IPP80N06S205AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S205AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S205AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N06S205AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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