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Infineon Technologies IPP80N06S2H5AKSA1

Part No.:
IPP80N06S2H5AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP80N06S2H5AKSA1.pdf
Description:
MOSFET N-CH 55V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,663

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Product details

Overview

IPP80N06S2H5AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 55 V VDS, 80 A continuous drain current at TC = 25 °C, and ultra-low 4.6 mΩ typical RDS(on) at VGS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPP80N06S2H5AKSA1 datasheet, IPP80N06S2H5AKSA1 pinout, IPP80N06S2H5AKSA1 application, or IPP80N06S2H5AKSA1 equivalent, key selection criteria include RDS(on) at 80 A, thermal resistance (RthJC = 0.5 K/W), avalanche energy (EAS = 700 mJ), diode forward voltage (VSD = 0.9–1.3 V), and gate charge profile (Qg = 116–155 nC).

Technical Context

This OptiMOS® power transistor uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 4.6 mΩ typical RDS(on) enables high-efficiency operation at 80 A, and its 700 mJ single-pulse avalanche energy supports robustness in inductive load switching.

The device integrates a co-packaged body diode with 60–75 ns reverse recovery time and 130–163 nC Qrr, enabling synchronous rectification in buck converters. Gate plateau voltage is 5.1 V, and total gate charge ranges from 116 to 155 nC under standard test conditions (VDD = 44 V, ID = 100 A, RG = 2.4 Ω).

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - maximum blocking voltage for 12 V/24 V automotive battery rail applications
RDS(on) max5.5 mΩ at VGS = 10 V, ID = 80 A - ensures <1.5 W conduction loss at full load
ID continuous80 A at TC = 25 °C - supported by TO-220 package with 0.5 K/W junction-to-case thermal resistance
EAS700 mJ - withstands inductive energy spikes without failure in motor drive H-bridge legs
Qg155 nC max - determines gate driver power requirement and switching speed trade-off
VGS(th)2.1–4.0 V - enables reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers
tr/tf23 ns / 22 ns - supports >500 kHz switching in high-frequency DC-DC converters

Pinout & Package

IPP80N06S2H5AKSA1 is housed in PG-TO220-3-1 package: three-terminal through-hole plastic package with isolated tab (drain-connected), standard lead pitch (2.54 mm), and JEDEC TO-220 mechanical outline. Mounting requires thermal interface material and mechanical screw-down for optimal heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main power output terminalElectrically connected to metal tab; must be thermally and electrically tied to heatsink/PCB ground plane
SourcePower return pathReference node for gate drive; carries full load current back to supply return
GateControl inputHigh-impedance MOSFET control terminal; requires low-inductance gate loop and appropriate series resistance (RG)

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
100% avalanche testedEach unit screened for single-pulse ruggedness up to 700 mJ - no derating needed in inductive switching
Green packageLead-free, RoHS-compliant construction with MSL1 rating (260 °C peak reflow)
Ultra-low RDS(on)4.6 mΩ typ. reduces conduction loss by >30% vs. prior-generation 60 V MOSFETs at same current
175 °C operating temperatureEnables placement near hot engine compartments without thermal throttling or derating

Applications

Engine Control Unit (ECU) High-Side DriverAutomotive DC-DC Converter Primary Switch

Use Scenario: Driving solenoid valves and fuel injectors in gasoline/diesel engine management systems.

IC Role / Device Role / Timing Role: High-side power switch controlling 12 V/24 V loads with PWM duty cycles up to 95%.

Use Value: Low RDS(on) minimizes I²R heating during sustained activation; avalanche rating prevents failure during coil flyback.

Use Scenario: Primary-side switching element in 12 V to 5 V/3.3 V buck converters powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch operating at 200–500 kHz with hard-switched topology.

Use Value: Fast tr/tf and low Qg reduce switching losses; integrated diode enables cost-effective synchronous operation.

Electric Power Steering (EPS) Motor Phase LegOn-Board Charger (OBC) Auxiliary DC-DC Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless DC motor in EPS system.

IC Role / Device Role / Timing Role: Low-side or high-side switching device handling bidirectional current up to 80 A peak.

Use Value: 175 °C rating allows direct mounting on EPS controller heatsink; low VSD reduces freewheeling loss during PWM dead-time.

Use Scenario: Isolated auxiliary supply stage converting high-voltage battery (400 V) to 12 V for OBC control circuitry.

IC Role / Device Role / Timing Role: Primary switch in flyback or forward converter operating with wide input range and high reliability demand.

Use Value: AEC-Q101 qualification ensures long-term stability under thermal cycling; 700 mJ EAS protects against transformer leakage energy surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N06S2H5SMD version in PG-TO263-3-2; RDS(on) max = 5.2 mΩ; identical die and specs except packageRequires PCB-mount design with thermal pad; not suitable for through-hole assemblySelect when automated SMT production and higher board-level power density are required
IPP80N06S4L-04Newer OptiMOS™ 4 generation; RDS(on) max = 4.0 mΩ; lower Qg (125 nC); same TO-220 packageImproved efficiency at light loads due to lower gate charge; optimized for 100 kHz+ switchingSelect when upgrading legacy designs for higher efficiency or higher frequency operation

Compared with IPB80N06S2H5 and IPP80N06S4L-04, IPP80N06S2H5AKSA1 offers proven thermal ruggedness and mature qualification for cost-sensitive automotive modules, while trading slight RDS(on) and Qg for broader supply chain availability and long-term lifecycle support.

Availability

IPP80N06S2H5AKSA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and on-board chargers requiring stable component supply across multi-year automotive production programs.

Supply support for IPP80N06S2H5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS® power transistor product line, engineered specifically for high-current, high-reliability automotive power switching applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

Is IPP80N06S2H5AKSA1 pin-compatible with IPP80N06S2H5?

No - IPP80N06S2H5AKSA1 uses PG-TO220-3-1 (through-hole), while IPP80N06S2H5 uses PG-TO263-3-2 (surface-mount). Pin functions are identical (Drain/Source/Gate), but mechanical footprint, thermal pad connection, and soldering method differ. Board redesign is required for substitution.

What is the maximum safe operating temperature for continuous 80 A current?

At 80 A continuous, junction temperature must remain ≤175 °C. With RthJC = 0.5 K/W and case temperature held at ≤100 °C (achievable with adequate heatsinking), junction temperature reaches ~140 °C - within safe margin. Derating is required above TC = 100 °C per datasheet curve.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No - the device has VGS(th) of 2.1–4.0 V and exhibits no significant Miller-induced turn-on. Standard 0 V gate pull-down is sufficient. However, a small negative bias (–2 V) may improve noise immunity in high-noise engine bay environments per Infineon AN2015-07.

Can IPP80N06S2H5AKSA1 replace IPP80N06S2-05 in existing designs?

Yes - both share identical PG-TO220-3-1 package, 55 V rating, and AEC-Q101 qualification. The -05 variant has RDS(on) max = 5.5 mΩ (same as this part), but IPP80N06S2H5AKSA1 offers tighter Qg and EAS specifications per Rev. 1.0 datasheet, making it a functional and reliability-enhanced upgrade.

IPP80N06S2H5AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:
155 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP80N06S2H5AKSA1 FAQ

1.How can I place an order for IPP80N06S2H5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N06S2H5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S2H5AKSA1 reliable?

The price and inventory of IPP80N06S2H5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S2H5AKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S2H5AKSA1 transactions.

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IPP80N06S2H5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N06S2H5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S2H5AKSA1?

For technical support, including IPP80N06S2H5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S2H5AKSA1 requirements.

6.How does Aetrix verify that IPP80N06S2H5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S2H5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S2H5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N06S2H5AKSA1?

All IPP80N06S2H5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S2H5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S2H5AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N06S2H5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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