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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N06S2L06AKSA1

Name: IPP80N06S2L06AKSA1
Brand: Infineon Technologies
SKU: IPP80N06S2L06AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N06S2L06AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N06S2L06AKSA1.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

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Product details

Overview

IPP80N06S2L06AKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 100 °C, and ultra-low 6.3 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified for automotive applications and features 100% avalanche testing, 175 °C maximum junction temperature, and green (lead-free) packaging.

For engineers reviewing the IPP80N06S2L06AKSA1 datasheet, IPP80N06S2L06AKSA1 pinout, IPP80N06S2L06AKSA1 application, or IPP80N06S2L06AKSA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low conduction loss under high-current DC/switching loads, thermal performance with R_thJC = 0.6 K/W, and robustness in automotive powertrain and body control modules.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve high current density and low R_DS(on) while maintaining fast switching (t_r = 21 ns, t_f = 20 ns) and low gate charge (Q_g = 114–150 nC). Its optimized capacitance profile (C_iss = 3800 pF, C_oss = 890 pF, C_rss = 240 pF) supports efficient hard-switching in 12 V and 24 V automotive systems.

The integrated body diode exhibits low forward voltage (V_SD = 0.9–1.3 V at I_F = 80 A) and controlled reverse recovery (Q_rr = 92–115 nC, t_rr = 60–76 ns), enabling reliable synchronous rectification and freewheeling operation without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal battery systems and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) max	6.3 mΩ at V_GS = 10 V - Enables ≤ 51 W conduction loss at 80 A, reducing heatsink requirements in high-current motor drivers.
I_D continuous	80 A at T_C = 100 °C - Sustains full load in engine control units, HVAC blowers, and seat/mirror actuators without derating.
Q_g	114–150 nC - Determines gate driver power requirement; enables <1 µs turn-on with 150 mA peak drive current.
E_AS	530 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during inductive load switching faults.
T_j max	+175 °C - Supports operation in under-hood environments with minimal thermal margin loss over lifetime.
V_GS(th)	1.2–2.0 V - Logic-level threshold allows direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

Pinout & Package

IPP80N06S2L06AKSA1 is housed in a PG-TO220-3-1 package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal resistance from junction to case is 0.6 K/W, enabling high-power dissipation when mounted on heatsinks with thermal interface material.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side return path; connects to ground or current-sense resistor; electrically referenced to PCB ground plane.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <150 nC charge for full enhancement; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards.
100% avalanche tested	Each unit subjected to single-pulse inductive energy stress at rated I_D and V_DS, ensuring field robustness against inductive kickback.
Logic-level gate drive	V_GS(th) range of 1.2–2.0 V enables direct interfacing with 3.3 V MCUs and reduces gate driver BOM count.
Ultra-low R_DS(on)	6.3 mΩ max at 10 V drive minimizes I²R losses in high-current DC loads such as fuel pumps and radiator fans.
Green (lead-free) package	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) up to 260 °C peak reflow.

Applications

Engine Start-Stop System

Automotive HVAC Blower

Use Scenario: Repeated engagement/disengagement of starter motor during frequent engine restarts in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlling 12 V starter solenoid coil with precise timing and current limiting.

Use Value: Low R_DS(on) and 175 °C rating ensure stable operation across wide ambient temperature swings and repeated high-current pulses up to 320 A peak.

Use Scenario: Variable-speed control of cabin air blower motor using PWM-driven high-side switching.

IC Role / Device Role / Timing Role: Logic-level N-channel MOSFET used in high-side configuration with bootstrap gate driver.

Use Value: 6.3 mΩ R_DS(on) reduces heat generation at 40–60 A continuous load, eliminating need for active cooling in compact HVAC modules.

Electric Power Steering (EPS)

Body Control Module (BCM) Load Driver

Use Scenario: Driving dual three-phase inverter half-bridges for assist motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology handling bidirectional motor current up to 80 A RMS.

Use Value: Fast switching (t_r/t_f ≤ 21/20 ns) and low Q_gd minimize switching losses at 20–50 kHz PWM frequencies.

Use Scenario: Switching high-current loads such as headlamp leveling motors, rear window defrosters, and seat heaters.

IC Role / Device Role / Timing Role: Protected high-current load driver replacing electromechanical relays in centralized BCM architecture.

Use Value: Integrated avalanche ruggedness eliminates need for external TVS clamps, reducing board space and improving long-term reliability in vibration-prone chassis locations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N06S2L06AKSA1	Same die, TO263-3 package; lower R_thJA in SMD layout (40 K/W vs 62 K/W)	Better suited for automated SMT assembly and thermally constrained PCBs	Select when surface-mount integration and higher power density are required
STP80NF55-08	Higher R_DS(on) (8.0 mΩ), wider V_GS(th) (2.0–4.0 V), no AEC-Q101 certification	Limited to industrial/commercial use; requires 5 V gate drive for full enhancement	Consider only for cost-sensitive non-automotive designs where qualification is not mandatory

Compared with IPB80N06S2L06AKSA1 and STP80NF55-08, IPP80N06S2L06AKSA1 delivers superior thermal performance in through-hole layouts, guaranteed automotive qualification, and tighter gate threshold control-making it the preferred choice for safety-critical 12 V power distribution in OEM vehicle platforms.

Availability

IPP80N06S2L06AKSA1 is available at Aetrix Electronics and suitable for automotive powertrain control, HVAC actuation, and body electronics requiring stable component supply across multi-year production cycles.

Supply support for IPP80N06S2L06AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive electrical systems.

FAQ

What is the maximum safe operating temperature for IPP80N06S2L06AKSA1?

The device supports continuous operation up to +175 °C junction temperature, validated per AEC-Q101 stress tests. Case temperature must remain ≤100 °C at 80 A continuous current to maintain reliability; thermal design must account for R_thJC = 0.6 K/W and PCB copper area per Infineon Application Note ANPS071E.

Is IPP80N06S2L06AKSA1 pin-compatible with IPB80N06S2L06AKSA1?

Yes-both share identical pinout (G-S-D) and electrical specifications, differing only in package: IPP80N06S2L06AKSA1 uses PG-TO220-3-1, while IPB80N06S2L06AKSA1 uses PG-TO263-3-2. Mechanical mounting and thermal interface differ, but circuit-level substitution is functionally valid.

Does this MOSFET require a gate resistor for automotive PWM applications?

Yes-a series gate resistor (typically 10–47 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Values depend on driver capability and layout parasitics; Infineon recommends simulation with SPICE models from their website to optimize EMI and shoot-through immunity.

Can IPP80N06S2L06AKSA1 replace older STP75NF75 devices in legacy designs?

Yes-with verification: both are 55 V, 75–80 A N-channel MOSFETs, but IPP80N06S2L06AKSA1 offers lower R_DS(on) (6.3 mΩ vs 7.5 mΩ), logic-level drive, and AEC-Q101 qualification. Layout review is needed for gate drive timing and thermal interface due to improved performance.

IPP80N06S2L06AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 69A, 10V

Vgs(th) (Max) @ Id:: 2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N06S2L06AKSA1 FAQ

1.How can I place an order for IPP80N06S2L06AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N06S2L06AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S2L06AKSA1 reliable?

The price and inventory of IPP80N06S2L06AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S2L06AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N06S2L06AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S2L06AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N06S2L06AKSA1?

IPP80N06S2L06AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N06S2L06AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S2L06AKSA1?

For technical support, including IPP80N06S2L06AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S2L06AKSA1 requirements.

6.How does Aetrix verify that IPP80N06S2L06AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S2L06AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S2L06AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N06S2L06AKSA1?

All IPP80N06S2L06AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S2L06AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S2L06AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N06S2L06AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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