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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N06S2L06AKSA2

Name: IPP80N06S2L06AKSA2
Brand: Infineon Technologies
SKU: IPP80N06S2L06AKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N06S2L06AKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N06S2L06AKSA2.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

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Product details

Overview

IPP80N06S2L06AKSA2 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 100 °C, and ultra-low 6.3 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and designed for high-efficiency automotive DC-DC converters and motor control stages.

For engineers reviewing the IPP80N06S2L06AKSA2 datasheet, IPP80N06S2L06AKSA2 pinout, IPP80N06S2L06AKSA2 application, or IPP80N06S2L06AKSA2 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), thermal resistance (R_thJC = 0.6 K/W), avalanche ruggedness (E_AS = 530 mJ), and automotive-grade reliability under 175 °C operation.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, and its 100% unclamped inductive switching (UIS) qualification confirms robustness in hard-switching topologies.

The MOSFET integrates a co-packaged body diode with low V_SD (0.9–1.3 V at 80 A) and controlled Q_rr (92–115 nC), enabling efficient synchronous rectification and freewheeling in buck, half-bridge, and H-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V automotive systems and industrial 24–48 V rails.
R_DS(on) max @ V_GS=10 V	6.3 mΩ - Enables <1 W conduction loss at 80 A, reducing heatsink requirements in high-current power stages.
I_D continuous @ T_C=100 °C	80 A - Sustains full-rated current in thermally constrained engine-bay environments.
E_AS single-pulse	530 mJ - Withstands repetitive inductive energy spikes without failure in motor drive or converter fault conditions.
V_GS(th)	1.2–2.0 V - Ensures clean turn-on with microcontroller GPIOs or low-voltage gate drivers without level-shifting.
Q_g total	114–150 nC - Balances switching speed and gate driver power loss for 100–500 kHz operation in DC-DC converters.
R_thJC	0.6 K/W - Supports high-power density designs with direct case-to-heatsink thermal path in TO-220 package.

Pinout & Package

Package: PG-TO220-3-1 - Standard through-hole power package with isolated tab (drain-connected), suitable for vertical mounting on heatsinks with insulating washers. Thermal interface optimized for low R_thJC via metal tab contact.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires <150 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output / high-side connection	Internally bonded to metal tab; electrically connected to heatsink unless insulated; handles 55 V blocking and 80 A conduction.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for dedicated high-side gate drivers in 3.3/5 V control systems.
100% UIS tested	Each unit subjected to unclamped inductive switching stress at I_D = 80 A, confirming ruggedness in real-world inductive load transients.
Green (lead-free) package	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 rating for lead-free reflow up to 260 °C peak.
Optimized body diode	Q_rr = 92–115 nC and t_rr = 60–76 ns enable reduced reverse recovery loss in synchronous rectifier and freewheeling roles.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Motor Drivers

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology operating at 200–300 kHz with precise dead-time control.

Use Value: 6.3 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 10 mΩ MOSFETs, improving system efficiency from 92% to 94.5% at 50 A load.

Use Scenario: Half-bridge phase-leg driving 3-phase BLDC motor in steering assist module.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during PWM commutation with fast fall time (t_f = 20 ns).

Use Value: 0.6 K/W R_thJC enables stable 80 A peak current delivery without thermal derating, supporting ISO 26262 ASIL-B functional safety timing margins.

Industrial Motor Control Inverters

Server VRMs and POL Converters

Use Scenario: 24 V input inverter for small AC induction motors in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Output stage switch in 3-phase inverter leg, operating with 10 µs gate drive pulses and 100% duty-cycle capability.

Use Value: Avalanche energy rating of 530 mJ prevents failure during motor stall or short-circuit events, eliminating need for external snubbers.

Use Scenario: Point-of-load (POL) buck converter supplying core voltage to AI accelerators in data center servers.

IC Role / Device Role / Timing Role: High-frequency (400 kHz) synchronous rectifier with gate plateau voltage of 3.5 V ensuring clean Miller region transition.

Use Value: Q_gd/Q_gs ratio of ~3.0 minimizes shoot-through risk during high-dV/dt transitions, supporting stable 50 A transient response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N06S2L-06	Same die, PG-TO263-3-2 surface-mount package; R_DS(on) = 4.8–6.1 mΩ (SMD version); lower R_thJA on PCB (40 K/W with 6 cm² copper).	Preferred for automated SMT assembly and space-constrained PCBs; not suitable for through-hole or heatsink-mounted designs.	Select when board area and thermal management via PCB copper are prioritized over mechanical mounting flexibility.
IRF8720PBF	55 V, 80 A, R_DS(on) = 7.0 mΩ @ 10 V; non-AEC-Q101; higher Q_g (120–160 nC); no 100% UIS test.	Targeted at commercial/industrial power supplies; lacks automotive qualification and avalanche ruggedness assurance.	Acceptable for cost-sensitive non-automotive applications where AEC-Q101 and UIS margin are not required.

Compared with IPB80N06S2L-06, the IPP80N06S2L06AKSA2 offers identical electrical performance in a through-hole TO-220 package ideal for prototyping and heatsink-integrated designs, while IRF8720PBF trades automotive reliability for broader commercial availability but with higher conduction loss and unverified avalanche capability.

Availability

IPP80N06S2L06AKSA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering motor drivers, and industrial motor control inverters requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPP80N06S2L06AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-current, high-reliability automotive and industrial switching applications demanding low R_DS(on), robust avalanche behavior, and AEC-Q101 compliance.

FAQ

Is IPP80N06S2L06AKSA2 pin-compatible with standard TO-220 N-channel MOSFETs?

Yes - it uses the industry-standard PG-TO220-3-1 footprint with Source-Gate-Drain pinout (left-to-right, tab facing outward). Pin 1 is Source, Pin 2 is Gate, and Pin 3 is Drain (connected to the metal tab). No adapter or layout change is needed when replacing other 3-pin TO-220 logic-level MOSFETs with matching voltage/current ratings.

What is the maximum safe operating temperature for continuous use?

The junction temperature must not exceed +175 °C, and the case temperature is rated to +100 °C for 80 A continuous current. Derating is required above 100 °C case temperature per the I_D vs. T_C curve; at T_C = 125 °C, maximum continuous current drops to approximately 65 A due to thermal limits.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes - a gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dV/dt coupling. The device's Q_gd of 38–60 nC and C_iss of 3800 pF make it susceptible to oscillation without proper gate drive impedance control.

Can IPP80N06S2L06AKSA2 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with junction temperature) enables inherent current sharing. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are mandatory to ensure balanced dynamic current distribution and avoid thermal runaway.

IPP80N06S2L06AKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 69A, 10V

Vgs(th) (Max) @ Id:: 2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N06S2L06AKSA2 FAQ

1.How can I place an order for IPP80N06S2L06AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N06S2L06AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S2L06AKSA2 reliable?

The price and inventory of IPP80N06S2L06AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S2L06AKSA2 is usually 5 days.

3.What payment methods are accepted for IPP80N06S2L06AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S2L06AKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N06S2L06AKSA2?

IPP80N06S2L06AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N06S2L06AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S2L06AKSA2?

For technical support, including IPP80N06S2L06AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S2L06AKSA2 requirements.

6.How does Aetrix verify that IPP80N06S2L06AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S2L06AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S2L06AKSA2 meets industry standards.

7.What is the process for return or replacement of IPP80N06S2L06AKSA2?

All IPP80N06S2L06AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S2L06AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S2L06AKSA2 part is unused and in its original packaging.

Return procedure for IPP80N06S2L06AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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