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Infineon Technologies IPP80N06S2L07AKSA2

Part No.:
IPP80N06S2L07AKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP80N06S2L07AKSA2.pdf
Description:
MOSFET N-CH 55V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,527

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Product details

Overview

IPP80N06S2L07AKSA2 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for high-current DC-DC conversion and automotive power switching. It delivers 80 A continuous drain current at TC = 25 °C, features ultra-low RDS(on) of 6.7 mΩ (max) at VGS = 10 V, operates up to 175 °C junction temperature, and is AEC-Q101 qualified for under-hood automotive applications such as engine control unit (ECU) load switching.

For engineers reviewing the IPP80N06S2L07AKSA2 datasheet, IPP80N06S2L07AKSA2 pinout, IPP80N06S2L07AKSA2 application, or IPP80N06S2L07AKSA2 equivalent, key selection criteria include its 55 V VDS, 100% avalanche-tested ruggedness, TO-220-3-1 package thermal resistance (RthJC = 0.7 K/W), and gate threshold voltage range (1.2–2.0 V) enabling direct microcontroller drive without level-shifting.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its dynamic parameters-Ciss = 3160 pF, Coss = 740 pF, and Qg = 95–130 nC-support efficient operation in synchronous buck converters operating at 100–500 kHz.

The integrated body diode exhibits trr = 59–75 ns and Qrr = 80–100 nC, enabling reliable freewheeling in hard-switched topologies. Thermal design is enabled by validated RthJC = 0.7 K/W and RthJA = 62 K/W (leaded), with derating curves provided for ID and Ptot versus case temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage compatible with 48 V automotive systems and industrial 24/48 V rails.
RDS(on) max6.7 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 80 A, critical for thermally constrained ECU modules.
ID continuous80 A @ TC = 25 °C - Sustained high-current capability supported by bondwire-limited rating and 0.7 K/W junction-to-case thermal path.
EAS450 mJ - 100% production-tested single-pulse avalanche energy ensures robustness against inductive switching transients.
VGS(th)1.2–2.0 V - Logic-level gate enables direct drive from 3.3 V or 5 V MCUs without external gate drivers.
tr/tf35 ns / 31 ns - Fast switching transitions reduce switching losses in high-frequency SMPS designs.
Qg95–130 nC - Gate charge value determines required driver peak current and influences gate drive loop stability.

Pinout & Package

IPP80N06S2L07AKSA2 is housed in a PG-TO220-3-1 package (standard through-hole TO-220 variant with 3 leads and isolated tab). The drain is connected to the metal tab for optimal heat transfer to heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalReference node for gate drive; connects to low-side return path; requires low-inductance layout for switching stability.
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate; driven by MCU GPIO or dedicated gate driver; sensitive to noise and ringing.
Pin 3 (Drain)Power outputConnected to metal tab; electrically tied to high-side power rail; must be thermally coupled to heatsink via insulating pad or mounting hardware.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive use including temperature cycling, humidity, and mechanical shock per AEC standard.
175 °C maximum junction temperatureEnables operation in high-ambient environments like engine compartments without thermal throttling.
Green (lead-free) packageComplies with RoHS Directive 2011/65/EU; no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE.
Ultra-low RDS(on)Reduces I²R conduction losses by >30% vs. prior-generation 60 V MOSFETs, improving system efficiency in battery-powered applications.
100% avalanche testedEach unit undergoes single-pulse avalanche stress test to 450 mJ, ensuring field reliability in inductive load switching.

Applications

Automotive Engine Control Unit (ECU)Industrial 48 V DC-DC Converter

Use Scenario: Switching high-current solenoids, fuel injectors, and cooling fans in modern gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by 3.3 V MCU outputs with minimal external components.

Use Value: Low VGS(th) and 6.7 mΩ RDS(on) eliminate need for gate driver ICs and reduce board space and BOM cost.

Use Scenario: Primary-side synchronous rectification in isolated 48 V to 12 V buck converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous rectifier stage, operating at 200–300 kHz with tight dead-time control.

Use Value: Fast tr/tf and low Qg minimize switching losses, while 175 °C rating supports compact heatsink design.

On-Board Charger (OBC) Precharge CircuitElectric Power Steering (EPS) Motor Driver

Use Scenario: Controlled precharge of high-voltage DC-link capacitors during EV OBC startup to limit inrush current.

IC Role / Device Role / Timing Role: Series-connected power switch activated after soft-start timing, handling 80 A peak for <100 ms.

Use Value: 450 mJ avalanche rating absorbs energy from capacitor charging transients without failure.

Use Scenario: Half-bridge leg in 3-phase inverter driving 12 V or 48 V brushless EPS motors.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, commutated at variable frequency up to 20 kHz.

Use Value: Integrated body diode with trr < 75 ns and low Qrr minimizes reverse recovery losses and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL80N5LF6AGRDS(on) = 7.0 mΩ @ VGS = 10 V; Qg = 110 nC; TO-220FP package (shorter leads, lower profile)Same 80 A rating but higher RDS(on); slightly slower tr/tf (42/38 ns)Preferred where PCB height is constrained; less suitable for ultra-low-loss 48 V systems.
IRF8721PBFRDS(on) = 7.3 mΩ @ VGS = 10 V; Qg = 14 nC; SO-8 package; not AEC-Q101 qualifiedLower gate charge enables faster switching but limited to 20 A continuous; unsuitable for automotive under-hood useOnly viable for non-automotive, low-current, high-frequency applications where footprint is critical.

Compared with STL80N5LF6AG and IRF8721PBF, IPP80N06S2L07AKSA2 uniquely combines AEC-Q101 qualification, 6.7 mΩ RDS(on), and 450 mJ avalanche rating-making it the only choice for safety-critical, high-current automotive power stages requiring both ruggedness and efficiency.

Availability

IPP80N06S2L07AKSA2 is available at Aetrix Electronics and suitable for automotive engine control units, industrial 48 V DC-DC converters, on-board chargers, and electric power steering motor drivers requiring stable component supply across multi-year production cycles.

Supply support for IPP80N06S2L07AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power systems demanding low RDS(on), high temperature operation, and robust transient immunity.

FAQ

Is IPP80N06S2L07AKSA2 pin-compatible with IPP80N06S2L-07?

Yes. IPP80N06S2L07AKSA2 and IPP80N06S2L-07 share identical PG-TO220-3-1 packaging, pinout, and electrical specifications. The "AKSA2" suffix denotes Infineon's internal tape-and-reel packaging variant for automated assembly; all functional and thermal characteristics remain unchanged.

What is the maximum recommended gate resistor value for 200 kHz switching?

For 200 kHz operation with 100 mA peak gate driver current, a 10 Ω series gate resistor is recommended. This balances switching speed (tr/tf ≈ 35/31 ns) against gate oscillation risk and driver power dissipation, based on Qg = 110 nC (typ) and VGS swing of 10 V.

Does this MOSFET require a heatsink in 80 A continuous operation?

Yes. At 80 A and RDS(on) = 6.7 mΩ, conduction loss is ~43 W. With RthJC = 0.7 K/W, junction temperature rise exceeds safe limits without a heatsink. A minimum 15 cm² aluminum heatsink with forced airflow or thermal interface material is required to maintain Tj ≤ 150 °C.

Can IPP80N06S2L07AKSA2 replace IPB80N06S2L-07 in existing designs?

Yes, with identical electrical and thermal performance. Both share the same die, RDS(on), Qg, and avalanche rating. The IPB80N06S2L-07 uses PG-TO263-3-2 (D²PAK) packaging, while IPP80N06S2L07AKSA2 uses PG-TO220-3-1-so mechanical layout and thermal mounting must be verified for compatibility.

IPP80N06S2L07AKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3160 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
210W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP80N06S2L07AKSA2 FAQ

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Please submit a Request for Quotation (RFQ) for IPP80N06S2L07AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S2L07AKSA2 reliable?

The price and inventory of IPP80N06S2L07AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S2L07AKSA2 is usually 5 days.

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IPP80N06S2L07AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S2L07AKSA2?

For technical support, including IPP80N06S2L07AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S2L07AKSA2 requirements.

6.How does Aetrix verify that IPP80N06S2L07AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S2L07AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S2L07AKSA2 meets industry standards.

7.What is the process for return or replacement of IPP80N06S2L07AKSA2?

All IPP80N06S2L07AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S2L07AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S2L07AKSA2 part is unused and in its original packaging.

Return procedure for IPP80N06S2L07AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP80N06S2L07AKSA2 Tags

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