Infineon Technologies IPP80N06S2L09AKSA1

Overview

IPP80N06S2L09AKSA1 from Infineon is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 6.6–8.2 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified and designed for high-efficiency DC-DC converters and automotive body control modules.

For engineers reviewing the IPP80N06S2L09AKSA1 datasheet, IPP80N06S2L09AKSA1 pinout, IPP80N06S2L09AKSA1 application, or IPP80N06S2L09AKSA1 equivalent, key selection criteria include R_DS(on) at 4.5 V/10 V, avalanche energy (370 mJ), thermal resistance (R_thJC = 0.8 K/W), and AEC-Q101 qualification for under-hood use.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V/5 V logic, and its 100% avalanche-tested design supports robust operation in inductive load switching.

The MOSFET integrates a co-packaged freewheeling diode with 0.9–1.3 V forward voltage at 80 A and 57–70 ns reverse recovery time. Thermal design is enabled by low junction-to-case resistance (0.8 K/W) and support for PCB copper area cooling (40 mm × 40 mm FR4 with 6 cm² drain pad).

Key Specifications

Pinout & Package

IPP80N06S2L09AKSA1 is housed in PG-TO220-3-1 package: isolated tab (drain), three leads in linear configuration, lead-free, MSL1-rated for 260 °C peak reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB80N06S2L09AKSA1, the TO263 variant offers superior PCB thermal dissipation but demands reflow-compatible layout, while STP80NF55-08 trades automotive qualification and lower Q_g for broader industrial availability and higher switching loss.

Availability

IPP80N06S2L09AKSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor starters, and server power OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IPP80N06S2L09AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-current, low-voltage switching in automotive and industrial power conversion where efficiency, ruggedness, and qualification compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPP80N06S2L09AKSA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both −20 V and +20 V per datasheet Rev. 1.0. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 0 V to 10 V for full enhancement with margin; 12 V is permissible only with series gate resistance to limit dv/dt-induced overshoot.

Does IPP80N06S2L09AKSA1 require a gate resistor in typical switching applications?

Yes - a gate resistor (typically 2.3 Ω, per datasheet test condition) is required to control switching speed, suppress ringing, and limit peak gate current. Without it, parasitic inductance can cause oscillation and exceed the 105 nC total gate charge slew rate, risking shoot-through or EMI failure in half-bridge configurations.

How does the 175 °C maximum junction temperature impact thermal design?

The 175 °C rating allows operation in high-ambient environments (e.g., under-hood automotive), but thermal design must ensure steady-state T_j stays below this limit. With R_thJC = 0.8 K/W, a 100 W power dissipation requires ≤80 K ΔT from case to junction - thus heatsink and interface design must maintain T_C ≤95 °C at full load.

Is the integrated body diode suitable for synchronous rectification?

No - the body diode has 57–70 ns t_rr and 70–90 nC Q_rr, making it unsuitable for high-frequency synchronous rectification above ~100 kHz. It is optimized for freewheeling in motor drives and relay replacement, not zero-voltage switching. Dedicated synchronous rectifier FETs or Schottky-assisted topologies are recommended for SMPS applications.