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Infineon Technologies IPP80N06S2L09AKSA2

Part No.:
IPP80N06S2L09AKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP80N06S2L09AKSA2.pdf
Description:
MOSFET N-CH 55V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:6,899

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Product details

Overview

IPP80N06S2L09AKSA2 from Infineon is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching, featuring 55 V VDS, 8.3 mΩ RDS(on) at VGS = 10 V, 80 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood applications such as DC-DC converter primary-side switches.

For engineers reviewing the IPP80N06S2L09AKSA2 datasheet, IPP80N06S2L09AKSA2 pinout, IPP80N06S2L09AKSA2 application, or IPP80N06S2L09AKSA2 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, single-pulse avalanche energy (370 mJ), thermal resistance (RthJC = 0.8 K/W), and TO-220-3 package compatibility with standard heatsink mounting.

Technical Context

This OptiMOS® power transistor uses trench-gate superjunction technology to achieve ultra-low conduction losses while maintaining fast switching performance. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers, and its 100% avalanche-tested construction supports robust operation in inductive load circuits like motor drivers and solenoid controls.

The device integrates a low-VSD body diode (0.9–1.3 V at 80 A) with 57–70 ns reverse recovery time and 70–90 nC Qrr, enabling efficient synchronous rectification and freewheeling in buck converters and H-bridge inverters without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus systems.
RDS(on) max @ VGS=10 V8.3 mΩ - Enables ≤6.6 W conduction loss at 80 A, reducing heatsink requirements.
ID continuous @ TC=25 °C80 A - Supports high-power loads such as starter relays and battery disconnect switches.
EAS single pulse370 mJ - Withstands inductive kickback in motor control without external snubbers.
RthJC0.8 K/W - Allows direct thermal coupling to heatsinks for stable 175 °C junction operation.
Qg total82–105 nC - Determines gate driver strength requirement for <53 ns turn-off delay at 10 V drive.
VGS(th)1.2–2.0 V - Ensures reliable turn-on with 3.3 V logic controllers without level-shifting.

Pinout & Package

IPP80N06S2L09AKSA2 is housed in PG-TO220-3-1 package: isolated tab (drain), vertical lead orientation, through-hole mounting, with drain-connected metal tab for thermal and electrical connection to heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or current-sense resistor for overcurrent protection.
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring <105 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)Power output / high-side switch nodeInternally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V, eliminating need for gate driver ICs in 5 V MCU systems.
AEC-Q101 qualifiedValidated for automotive temperature range (−40 to +175 °C) and mechanical stress per JESD22-A108.
100% avalanche testedEach unit passes single-pulse EAS screening at 370 mJ, ensuring field reliability in inductive switching.
Green packageLead-free, halogen-free PG-TO220-3-1 compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 rating.
Ultra-low RDS(on)6.6–8.2 mΩ typical at VGS = 10 V and ID = 52 A (SMD version), directly reducing I²R losses in high-current paths.

Applications

Automotive Body Control Module (BCM)Industrial DC Motor Driver

Use Scenario: Switching 12 V/24 V loads including headlamps, HVAC blowers, and window lift motors.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by 5 V microcontroller GPIO with PWM capability.

Use Value: 8.3 mΩ RDS(on) limits power dissipation to <5.3 W at 80 A, enabling compact PCB layout without forced-air cooling.

Use Scenario: Driving brushed DC motors up to 2 kW in factory automation actuators and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with fast 19 ns rise time and 18 ns fall time.

Use Value: 370 mJ avalanche energy absorbs back-EMF during sudden motor stop, preventing destructive voltage spikes on the rail.

Onboard Charger (OBC) Primary SwitchServer PSU OR-ing FET

Use Scenario: High-frequency hard-switched primary-side switch in 3.3 kW AC/DC PFC stage.

IC Role / Device Role / Timing Role: Fast-turning N-channel MOSFET with 2620 pF Ciss and 170 pF Crss for ZVS-compatible operation.

Use Value: 82–105 nC Qg enables efficient gate driving at 100 kHz with minimal driver loss and reduced EMI.

Use Scenario: Reverse-polarity and hot-swap protection in redundant 12 V server power distribution.

IC Role / Device Role / Timing Role: Low-RDS(on) OR-ing FET placed between parallel PSUs and load, controlled by ideal diode controller.

Use Value: 0.9–1.3 V VSD and 70–90 nC Qrr minimize forward drop and switching loss during load current transfer events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N06S2L-09Same die, PG-TO263-3-2 surface-mount package; RthJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO-220.Preferred for automated SMT assembly and space-constrained designs; requires thermal pad reflow profile.Select when board area is limited and thermal management via PCB copper is feasible.
STP80NF55-0855 V, 80 A, RDS(on) = 8.5 mΩ @ 10 V; higher Qg (120 nC); not AEC-Q101 qualified.Suitable for industrial non-automotive use only; lacks automotive stress validation and MSL1 reflow rating.Choose for cost-sensitive non-automotive applications where AEC-Q101 is not mandated.

Compared with IPB80N06S2L-09, IPP80N06S2L09AKSA2 offers identical electrical specs but simplified through-hole assembly and higher RthJA; versus STP80NF55-08, it delivers superior automotive qualification, lower Qg, and tighter RDS(on) tolerance-critical for thermal margin in sealed enclosures.

Availability

IPP80N06S2L09AKSA2 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and server power supply designs requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for IPP80N06S2L09AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12 V/24 V/48 V systems.

FAQ

Is IPP80N06S2L09AKSA2 pin-compatible with IPP80N06S2L-09?

No. IPP80N06S2L09AKSA2 uses PG-TO220-3-1 package with through-hole leads and isolated drain tab, while IPP80N06S2L-09 uses PG-TO263-3-2 surface-mount package with exposed drain pad. Mechanical mounting, thermal path, and PCB footprint differ fundamentally.

What is the maximum safe operating temperature for continuous operation?

The device supports continuous operation up to Tj = 175 °C, verified per AEC-Q101 stress testing. At TC = 100 °C, continuous drain current derates to 73 A with VGS = 10 V, based on thermal resistance RthJC = 0.8 K/W and package power dissipation limits.

Does this MOSFET require a gate resistor for driving from a microcontroller?

Yes. A series gate resistor (typically 10–47 Ω) is required to damp ringing, limit peak gate current, and control switching speed. Without it, 105 nC Qg and fast 19 ns rise time may cause EMI and shoot-through in bridge configurations.

Can IPP80N06S2L09AKSA2 replace older IPP80N06S2-09 in existing designs?

Yes, with verification. IPP80N06S2L09AKSA2 improves on IPP80N06S2-09 with lower RDS(on) (8.3 mΩ vs. 9.5 mΩ), tighter VGS(th) (1.2–2.0 V vs. 1.0–2.5 V), and AEC-Q101 qualification. Layout and thermal interface remain compatible due to identical TO-220-3 package outline.

IPP80N06S2L09AKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 52A, 10V
Vgs(th) (Max) @ Id:
2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2620 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
190W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP80N06S2L09AKSA2 FAQ

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Please submit a Request for Quotation (RFQ) for IPP80N06S2L09AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S2L09AKSA2 reliable?

The price and inventory of IPP80N06S2L09AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S2L09AKSA2 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S2L09AKSA2 transactions.

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IPP80N06S2L09AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IPP80N06S2L09AKSA2?

For technical support, including IPP80N06S2L09AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S2L09AKSA2 requirements.

6.How does Aetrix verify that IPP80N06S2L09AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S2L09AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S2L09AKSA2 meets industry standards.

7.What is the process for return or replacement of IPP80N06S2L09AKSA2?

All IPP80N06S2L09AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S2L09AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S2L09AKSA2 part is unused and in its original packaging.

Return procedure for IPP80N06S2L09AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP80N06S2L09AKSA2 Tags

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