Infineon Technologies IPP80N06S2LH5AKSA1

Overview

IPP80N06S2LH5AKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 100 °C, and ultra-low 4.7 mΩ R_DS(on) (max) at V_GS = 4.5 V. It is AEC-Q101 qualified and 100% avalanche tested, designed for high-efficiency DC-DC converters in automotive body control modules.

For engineers reviewing the IPP80N06S2LH5AKSA1 datasheet, IPP80N06S2LH5AKSA1 pinout, IPP80N06S2LH5AKSA1 application, or IPP80N06S2LH5AKSA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), thermal resistance (R_thJC = 0.5 K/W), avalanche ruggedness (E_AS = 700 mJ), and automotive-grade reliability under 175 °C operation.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage range (1.2–2.0 V) ensures robust turn-on with standard 3.3 V or 5 V logic controllers, and its 100% unclamped inductive switching (UIS) test validates ruggedness in hard-switching topologies.

The MOSFET integrates a low-V_SD body diode (0.9–1.3 V at 80 A, 25 °C) with t_rr = 76–95 ns and Q_rr = 169–210 nC, enabling efficient synchronous rectification and freewheeling in buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: PG-TO220-3-1 - Through-hole, isolated tab, single-drain configuration with mechanical screw-mount capability and industry-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB80N06S2L-H5 and STP80NF55-08, IPP80N06S2LH5AKSA1 uniquely combines TO-220 through-hole mountability, automotive qualification, and sub-5 mΩ R_DS(on) at logic-level gate drive-making it optimal for serviceable, high-reliability 48 V power switches where manual replacement and under-hood thermal stability are mandatory.

Availability

IPP80N06S2LH5AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 48 V DC-DC converters, motor drive half-bridges, and telecom hot-swap controllers requiring stable component supply across extended product lifecycles.

Supply support for IPP80N06S2LH5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS® 2nd generation power transistor family, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low R_DS(on), logic-level drive, and robust avalanche performance.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is +175 °C. At T_C = 100 °C, the device sustains 80 A continuous drain current with V_GS ≥ 10 V. Derating begins above 100 °C case temperature per the SOA curve on page 4 of the datasheet; at T_C = 125 °C, I_D drops to ~65 A due to thermal limitation of bondwire and silicon.

Is this MOSFET suitable for synchronous rectification in a 48 V to 12 V LLC converter?

Yes. Its low R_DS(on) (4.7 mΩ typ. at 4.5 V), fast body diode (t_rr = 76–95 ns), and low Q_rr (169–210 nC) make it effective for secondary-side synchronous rectification. Gate drive must be precisely timed to avoid shoot-through, and layout must minimize source inductance to preserve switching fidelity.

Does the "H5" suffix indicate a specific revision or process node?

Yes. The "H5" denotes the fifth revision of the OptiMOS® 2nd generation silicon process, featuring improved R_DS(on) consistency, tighter V_GS(th) distribution (1.2–2.0 V), and enhanced UIS ruggedness over earlier H3/H4 versions. This revision is documented in Infineon's AN2005-12 application note.

Can this part replace IPP80N06S2L-05 in existing designs?

No. IPP80N06S2L-05 has higher R_DS(on) (5.0 mΩ min at 10 V) and lacks AEC-Q101 qualification. While pin-compatible, the H5 version offers superior thermal performance and automotive validation; substitution requires revalidation of thermal margin and reliability testing per ISO/TS 16949 requirements.