Infineon Technologies IPP80N06S3-07

Overview

IPP80N06S3-07 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 6.5 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and supports automotive and industrial high-current switching applications such as DC-DC converters and motor control.

For engineers reviewing the IPP80N06S3-07 datasheet, IPP80N06S3-07 pinout, IPP80N06S3-07 application, or IPP80N06S3-07 equivalent, key selection criteria include its 1.1 K/W junction-to-case thermal resistance, 113–170 nC total gate charge, 5.8 mΩ typical R_DS(on), 7768 pF input capacitance, and 175 °C maximum operating temperature.

Technical Context

This device employs a trench-based silicon MOSFET structure optimized for low conduction and switching losses in high-efficiency power stages. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode with 55 ns reverse recovery time and 70 nC Q_rr supports synchronous rectification and freewheeling operation.

The MOSFET delivers stable performance across –55 °C to +175 °C junction temperature range, with R_DS(on) increasing only ~2.2× from 25 °C to 175 °C (typical). Its safe operating area (SOA) supports single-pulse avalanche energy up to 455 mJ at I_D = 40 A, validated per JEDEC JESD24-1.

Key Specifications

Pinout & Package

IPP80N06S3-07 uses the PG-TO220-3-1 package: through-hole, 3-terminal, isolated tab (drain-connected), standard TO-220 footprint with 2.54 mm lead pitch and 4.5 mm lead spacing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S3-07, the -09 variant trades 1.0 mΩ higher R_DS(on) for marginally improved gate charge linearity, while the IPB80N06S3-07 offers identical performance in a surface-mount format-enabling layout flexibility but demanding stricter PCB thermal design.

Availability

IPP80N06S3-07 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and server OR-ing applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for IPP80N06S3-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power supplies where low R_DS(on), avalanche ruggedness, and thermal reliability are critical.

FAQ

What is the maximum allowable gate-source voltage for IPP80N06S3-07?

The absolute maximum gate-source voltage is ±20 V, with qualification testing performed at –5 V and +20 V. Exceeding this rating risks irreversible gate oxide damage. Gate drive circuits must include clamping or zener protection, especially in high-noise environments like motor drives or automotive battery systems.

Does IPP80N06S3-07 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic parasitic body diode with 80 A continuous forward current rating, 320 A pulsed capability, and 0.6–1.3 V forward voltage at 80 A and 25 °C. Its reverse recovery time is 55 ns and Q_rr is 70 nC, enabling use in synchronous rectification and freewheeling paths without external diodes.

How does the thermal resistance R_thJC = 1.1 K/W translate to practical heatsink requirements?

With R_thJC = 1.1 K/W and typical conduction loss of ~3.7 W at 80 A, a junction-to-ambient thermal path ≤ 45 K/W is needed to hold T_j ≤ 150 °C at 100 °C case temperature. This typically requires a 25–30 cm² aluminum heatsink with forced air or direct bolt-down to chassis ground.

Is IPP80N06S3-07 suitable for use in linear mode (saturation region) operation?

No-it is not characterized or rated for linear mode operation. Its SOA curves are defined only for switching applications with specified pulse widths and duty cycles. Linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at low V_DS/high I_D combinations.