Infineon Technologies IPP80N06S3L-05

Overview

IPP80N06S3L-05 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 4.5 mΩ R_DS(on) max at V_GS = 10 V and I_D = 69 A, 175 °C operating temperature, and AEC-Q101 qualified for automotive applications including DC-DC converter primary-side switching.

For engineers reviewing the IPP80N06S3L-05 datasheet, IPP80N06S3L-05 pinout, IPP80N06S3L-05 application, or IPP80N06S3L-05 equivalent, key selection criteria include R_DS(on) at 10 V drive, single-pulse avalanche energy (825 mJ), thermal resistance (R_thJC = 0.9 K/W), and gate charge profile (Q_g = 182–273 nC) for hard-switched SMPS designs.

Technical Context

This device employs trench-gate silicon technology optimized for low conduction and switching losses in high-current, medium-voltage DC-DC and motor control topologies. Its 0.9 K/W junction-to-case thermal resistance enables 80 A continuous drain current at T_C = 25 °C with appropriate heatsinking.

The MOSFET features a fully characterized body diode with 80 A continuous forward current capability, 0.6–1.3 V V_SD at 80 A and 25 °C, and 70 ns t_rr, supporting synchronous rectification and freewheeling in half-bridge configurations without external diode supplementation.

Key Specifications

Pinout & Package

IPP80N06S3L-05 uses the PG-TO220-3-1 package: insulated tab, vertical mounting, through-hole leaded configuration with standard TO-220 footprint and creepage/clearance compliant to industrial safety standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP80NF55-08 and IRF840B, IPP80N06S3L-05 delivers superior conduction efficiency in 48 V systems, certified automotive reliability, and optimized gate charge for high-frequency SMPS-making it unsuitable as a drop-in replacement for either alternative without circuit redesign.

Availability

IPP80N06S3L-05 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server power supply designs requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for IPP80N06S3L-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-current switching in automotive and industrial 12–48 V power systems.

FAQ

Is IPP80N06S3L-05 pin-compatible with IPB80N06S3L-05 or IPI80N06S3L-05?

No. While all three share identical electrical specifications and OptiMOS™-T2 die, they differ in package: IPP80N06S3L-05 uses PG-TO220-3-1 (through-hole), IPB80N06S3L-05 uses PG-TO263-3-2 (SMD D²PAK), and IPI80N06S3L-05 uses PG-TO262-3-1 (I²PAK). Mechanical mounting and thermal interface requirements are not interchangeable.

What is the maximum recommended gate resistor value for 200 kHz switching?

For 200 kHz hard-switched operation with 12 V gate drive, a 4.7 Ω series gate resistor balances switching loss and EMI. This yields ~35 ns effective rise/fall times given Q_g ≈ 220 nC and typical driver output impedance, staying within safe SOA limits while minimizing dv/dt-induced shoot-through risk.

Does the body diode support synchronous rectification in continuous conduction mode?

Yes-the body diode is fully characterized with 80 A continuous forward current, 0.6–1.3 V V_SD, and 70 ns t_rr. It supports CCM operation in half-bridge configurations, though external Schottky diodes may be preferred for ultra-low V_F in high-efficiency designs where reverse recovery loss must be minimized.

Can IPP80N06S3L-05 operate reliably at 150 °C junction temperature?

Yes. The device is rated for T_j up to 175 °C, and R_DS(on) increases only ~2.2× from 25 °C to 150 °C per typ. curve (page 5). At 150 °C, R_DS(on) ≈ 10 mΩ, so 80 A yields ~64 W conduction loss-requiring R_thJC ≤ 0.9 K/W and adequate heatsink to maintain safe T_j.