Infineon Technologies IPP80N06S3L-06

Overview

IPP80N06S3L-06 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 4.9–5.9 mΩ R_DS(on) at V_GS = 10 V / I_D = 56 A. It is AEC-Q101 qualified, supports 175 °C operation, and is fully avalanche tested-used in automotive DC-DC converters and motor control H-bridges.

For engineers reviewing the IPP80N06S3L-06 datasheet, IPP80N06S3L-06 pinout, IPP80N06S3L-06 application, or IPP80N06S3L-06 equivalent, key selection criteria include its 1.1 K/W R_thJC, 131–196 nC total gate charge, 5.6 mΩ max R_DS(on) (SMD version), 455 mJ single-pulse avalanche energy, and integrated body diode with 55 ns t_rr.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss and fast switching. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility, while the 4.4 V gate plateau voltage ensures stable Miller region control during hard-switching transitions.

The MOSFET integrates a low-V_SD (0.6–1.3 V @ 80 A) body diode with 70 nC Q_rr, supporting synchronous rectification and freewheeling in buck converters and half-bridge inverters. Thermal design is enabled by its 1.1 K/W junction-to-case resistance and MSL1 rating for lead-free reflow up to 260 °C.

Key Specifications

Pinout & Package

IPP80N06S3L-06 is housed in PG-TO220-3-1 package: through-hole, isolated tab (drain-connected), standard mounting hole, JEDEC TO-220 outline with 3 leads. Thermal performance relies on mechanical mounting to heatsink via screw or clip.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S3-05, the IPP80N06S3L-06 trades marginally higher R_DS(on) for AEC-Q101 compliance and guaranteed avalanche ruggedness; versus IPB80N06S3L-06, it offers identical electrical specs but through-hole mounting for manual repairability and higher mechanical robustness in vibration-prone environments.

Availability

IPP80N06S3L-06 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering systems, and industrial motor drives requiring stable component supply across extended temperature and lifecycle conditions.

Supply support for IPP80N06S3L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V systems where thermal robustness and avalanche immunity are critical.

FAQ

What is the maximum allowable gate-source voltage for IPP80N06S3L-06?

The absolute maximum V_GS is ±16 V, qualified at –5 V and +16 V per datasheet Rev. 1.1. Operation beyond this range risks permanent gate oxide damage. For reliable 3.3 V logic-level drive, gate resistors and clamping diodes are recommended to suppress overshoot during fast switching.

Does IPP80N06S3L-06 have an integrated body diode, and what are its key parameters?

Yes-it features a monolithic fast-recovery body diode with 0.6–1.3 V forward voltage at 80 A and 25 °C, 55 ns reverse recovery time, and 70 nC reverse recovery charge. These values enable efficient freewheeling in buck and half-bridge topologies without external diodes in many cases.

Can IPP80N06S3L-06 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (see Fig. 8) ensures inherent current sharing above ~100 °C junction temperature. For stable parallel operation at lower temperatures, matched gate resistors and symmetrical PCB layout are required to balance dynamic current distribution.

Is thermal derating required for continuous 80 A operation?

At T_C = 25 °C, 80 A is permitted per datasheet; however, at T_C = 100 °C, the same current remains valid due to bondwire-limited rating-not thermal limitation. Real-world derating depends on heatsink design: with R_thJC = 1.1 K/W and R_thCA ≈ 40 K/W (6 cm² copper), max I_D drops to ~52 A at ambient 85 °C.