Infineon Technologies IPP80N06S3L-08

Overview

IPP80N06S3L-08 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 7.6 mΩ R_DS(on) max at V_GS = 10 V and I_D = 43 A. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPP80N06S3L-08 datasheet, IPP80N06S3L-08 pinout, IPP80N06S3L-08 application, or IPP80N06S3L-08 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (R_thJC = 1.4 K/W), avalanche energy rating (E_AS = 240 mJ), and AEC-Q101 qualification status for under-hood power stages.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) enables robust turn-on with standard 5 V or 10 V logic-level drivers, while its 89–134 nC total gate charge supports efficient PWM operation up to 100 kHz.

The integrated body diode features low forward voltage (V_SD = 0.6–1.3 V at 80 A) and fast reverse recovery (t_rr = 40 ns, Q_rr = 50 nC), reducing commutation losses in synchronous rectification and half-bridge topologies. Thermal design is enabled by a validated R_thJC of 1.4 K/W and compatibility with standard TO-220 heatsinking.

Key Specifications

Pinout & Package

IPP80N06S3L-08 is housed in PG-TO220-3-1 package with isolated tab (drain-connected). The case serves as the primary thermal path and must be electrically insulated when mounted to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP80NF55-08 and IRFB4115PBF, IPP80N06S3L-08 uniquely combines AEC-Q101 qualification, 175 °C operation, and 100% avalanche testing - making it the only option qualified for automotive powertrain and chassis systems requiring functional safety alignment.

Availability

IPP80N06S3L-08 is available at Aetrix Electronics and suitable for automotive powertrain control, industrial motor drives, and 12–24 V DC-DC conversion requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPP80N06S3L-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/24 V systems - emphasizing low R_DS(on), robust avalanche performance, and AEC-Q101 compliance.

FAQ

Is IPP80N06S3L-08 suitable for synchronous rectification in a 48 V battery system?

No - its 55 V V_DS rating provides only 7 V margin above 48 V nominal, insufficient for ISO 16750-2 load dump transients (up to 65 V). It is rated for 12 V and 24 V automotive systems where maximum transient voltage remains ≤60 V. For 48 V architectures, consider 80 V or 100 V V_DS alternatives.

What is the maximum allowable gate-source voltage during operation?

The absolute maximum V_GS is ±16 V per datasheet specifications. Operation beyond this risks irreversible gate oxide damage. Gate drive circuits must clamp V_GS to ≤15 V during normal switching and include transient suppression (e.g., Zener diode) to prevent overshoot from PCB inductance during fast turn-off.

Does IPP80N06S3L-08 require external gate resistors for safe operation?

Yes - a series gate resistor (typically 5–22 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Without it, parasitic oscillation can cause shoot-through in bridge configurations or exceed the 100 nC gate charge slew rate limit, risking gate driver failure.

Can IPP80N06S3L-08 replace IPP80N06S3-07 in existing designs?

No - although both are TO-220 N-channel MOSFETs, the "-07" variant has R_DS(on) = 8.5 mΩ and different dynamic parameters (e.g., C_iss = 5900 pF vs. 6475 pF). Substitution requires revalidation of thermal performance, switching loss, and gate drive strength due to measurable differences in Q_g and V_GS(th).