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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N06S407AKSA1

Name: IPP80N06S407AKSA1
Brand: Infineon Technologies
SKU: IPP80N06S407AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N06S407AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N06S407AKSA1.pdf

Description:: MOSFET N-CH 60V 80A TO220-3

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Product details

Overview

IPP80N06S407AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 60 V V_DS, 7.1 mΩ max R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested for robustness in automotive power switching.

For engineers reviewing the IPP80N06S407AKSA1 datasheet, IPP80N06S407AKSA1 pinout, IPP80N06S407AKSA1 application, or IPP80N06S407AKSA1 equivalent, key selection criteria include its 1.9 K/W R_thJC, 71 mJ single-pulse avalanche energy, 6.2–7.4 mΩ typical-to-max R_DS(on), and suitability for high-current DC-DC, motor drive, and battery protection circuits requiring AEC-Q101 compliance.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2.0–4.0 V) and plateau voltage (~6.0 V) support reliable 3.3 V/5 V logic-level gate drive compatibility when used with appropriate gate drivers.

The MOSFET integrates a robust body diode with 0.6–1.3 V forward voltage at 80 A and 39 ns reverse recovery time under defined conditions. Thermal design is enabled by its low junction-to-case thermal resistance (1.9 K/W), making it suitable for thermally constrained automotive modules where heatsinking is limited to TO-220 mounting surfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive systems and industrial 24–48 V rails.
R_DS(on) max	7.1 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, reducing heatsink requirements.
I_D cont	80 A at T_C = 25 °C - Supports high-current load switching without parallel devices in many 12–48 V applications.
E_AS	71 mJ (I_D = 40 A) - Confirmed single-pulse avalanche ruggedness for inductive load turn-off stress.
R_thJC	1.9 K/W - Allows direct thermal path to heatsink; enables 79 W power dissipation at 25 °C case temperature.
Q_g	43–56 nC - Gate charge optimized for efficient 100–500 kHz switching with standard gate drivers.
t_r/t_f	3 ns / 5 ns - Fast edge rates reduce switching losses in hard-switched topologies.

Pinout & Package

IPP80N06S407AKSA1 is housed in PG-TO220-3-1 package: isolated tab (drain), vertical lead orientation, RoHS-compliant matte tin plating, MSL1 rating for lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt for overcurrent protection.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires <56 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at I_AS = 80 A, ensuring field reliability in inductive switching faults.
OptiMOS™-T2 trench technology	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in medium-frequency SMPS.
175 °C maximum operating temperature	Enables operation in engine bay or under-hood modules without derating at ambient up to 125 °C.
Green product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and JESD204B material declarations.

Applications

Automotive Body Control Module (BCM)

48 V Mild Hybrid DC-DC Converter

Use Scenario: Switching headlamp, fog lamp, and HVAC blower loads in centralized vehicle electronics units.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled via PWM or on/off signals from microcontroller GPIOs.

Use Value: 80 A rating supports simultaneous multi-load activation; 7.1 mΩ R_DS(on) minimizes resistive heating during extended duty cycles.

Use Scenario: Synchronous rectification in bidirectional buck-boost converters interfacing 12 V starter battery and 48 V Li-ion storage.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–300 kHz with gate driver IC (e.g., 1EDN7512B).

Use Value: Low Q_g (43–56 nC) and fast t_r/t_f reduce switching losses; 60 V rating provides 20% margin above nominal 48 V rail.

Industrial Motor Starter

Server PSU OR-ing Circuit

Use Scenario: Solid-state replacement for contactors in 3-phase AC motor soft-starters and pump controllers.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge configuration with isolated gate drive.

Use Value: 175 °C T_j rating allows operation in sealed enclosures; 71 mJ E_AS withstands motor stall-induced inductive kickback.

Use Scenario: Hot-swap and redundancy management in redundant 12 V server power supplies using ideal diode control.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-V_SD (0.6–1.3 V) synchronous rectifier replacing Schottky diodes.

Use Value: Body diode forward voltage <1.3 V at 80 A reduces conduction loss by >40% vs. 45 V Schottky; integrated diode eliminates external component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N06S4-07	PG-TO263-3-2 package; identical die, lower R_thJA (40 K/W on 6 cm² PCB) but no isolated tab.	Better suited for SMD layouts with large copper pour; not mechanically interchangeable with TO-220 heatsinks.	Select when board space permits SMT assembly and thermal interface uses PCB copper instead of discrete heatsink.
STL80N6LF6	60 V, 80 A, 7.5 mΩ R_DS(on); AEC-Q101 qualified; different gate charge profile (Q_g = 62 nC).	Slightly higher switching loss due to +10 nC Q_g; same automotive qualification level and thermal specs.	Choose if Infineon supply constraints exist; verify gate driver capability for higher Q_g and adjust dead-time accordingly.

Compared with IPB80N06S4-07 and STL80N6LF6, IPP80N06S407AKSA1 offers mechanical compatibility with legacy TO-220 heatsinks, isolated drain tab for simplified insulation, and lowest Q_g among the three-enabling faster switching with reduced gate drive power.

Availability

IPP80N06S407AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid DC-DC converters, and industrial motor starters requiring stable component supply across multi-year production programs.

Supply support for IPP80N06S407AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V systems where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPP80N06S407AKSA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with minimum 6 V to ensure reliable turn-on across temperature and process variation. Gate drive circuits must include clamping or Zener protection to prevent transients from exceeding ±20 V.

Is IPP80N06S407AKSA1 suitable for use in synchronous rectification?

Yes - its low R_DS(on) (6.2–7.4 mΩ) and integrated body diode with 0.6–1.3 V V_SD at 80 A make it viable for synchronous rectification in 12–48 V DC-DC converters. However, external gate control timing must account for its 39 ns t_rr to avoid shoot-through; dedicated synchronous rectifier controllers (e.g., IR3584) are recommended over simple complementary PWM.

Does IPP80N06S407AKSA1 require a heatsink in all applications?

At 80 A continuous current, a heatsink is mandatory to maintain T_j ≤ 175 °C. Even at 25 °C ambient, its 1.9 K/W R_thJC and 79 W P_tot rating imply ~150 W thermal load at full current - far exceeding natural convection limits. Derating curves show usable current drops to ~58 A at T_C = 100 °C, confirming active thermal management is required for sustained high-current operation.

How does the 100% avalanche testing impact field reliability?

Each unit undergoes single-pulse avalanche stress at I_AS = 80 A, verifying robustness against inductive energy dump during fault events like motor stall or relay bounce. This screening eliminates latent defects that could cause early-life failure under real-world switching stress, directly supporting AEC-Q101's requirement for zero infant mortality in automotive deployments.

IPP80N06S407AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N06S407AKSA1 FAQ

1.How can I place an order for IPP80N06S407AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N06S407AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S407AKSA1 reliable?

The price and inventory of IPP80N06S407AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S407AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N06S407AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S407AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N06S407AKSA1?

IPP80N06S407AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N06S407AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S407AKSA1?

For technical support, including IPP80N06S407AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S407AKSA1 requirements.

6.How does Aetrix verify that IPP80N06S407AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S407AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S407AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N06S407AKSA1?

All IPP80N06S407AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S407AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S407AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N06S407AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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