Infineon Technologies IPP80N06S4L05AKSA2

Overview

IPP80N06S4L05AKSA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO220-3-1 package, rated for 60 V V_DS, 4.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature and 100% single-pulse avalanche tested - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPP80N06S4L05AKSA2 datasheet, IPP80N06S4L05AKSA2 pinout, IPP80N06S4L05AKSA2 application, or IPP80N06S4L05AKSA2 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy (152 mJ), thermal resistance (1.4 K/W), diode forward voltage (0.95 V typical), and TO-220 leaded package compatibility with industrial heatsinking.

Technical Context

This OptiMOS™-T2 power transistor uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility, and its 83–110 nC total gate charge supports high-frequency PWM operation up to 100 kHz in hard-switched topologies.

The integrated body diode exhibits 36 ns reverse recovery time and 41 nC Q_rr under V_R = 30 V, I_F = 80 A, di_F/dt = 100 A/µs conditions - critical for synchronous rectification and freewheeling in bidirectional power stages. Thermal design is anchored by a verified R_thJC of 1.4 K/W to case.

Key Specifications

Pinout & Package

IPP80N06S4L05AKSA2 uses the PG-TO220-3-1 package: insulated tab, vertical mounting, through-hole leads, with drain connected to tab for direct heatsink attachment. Thermal path optimized for 1.4 K/W junction-to-case resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S4L05AKSA2, the AKSA1 variant trades reflow compatibility for cost reduction, while the IPB80N06S4L05AKSA2 offers superior board-level thermal resistance at the expense of through-hole mechanical robustness and heatsink interface flexibility.

Availability

IPP80N06S4L05AKSA2 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and server power supply applications requiring stable component supply across multi-year production cycles.

Supply support for IPP80N06S4L05AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered for high-efficiency, high-reliability power switching in automotive and industrial environments where ruggedness, thermal stability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP80N06S4L05AKSA2 supports 78 A continuous drain current at T_C = 100 °C and V_GS = 10 V. This rating accounts for bondwire current limitation and thermal derating - not chip-limited current. At lower case temperatures, current is bondwire-limited to 80 A, and chip capability exceeds 112 A when R_thJC = 1.4 K/W is maintained.

Is this MOSFET suitable for 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage range (1.2–2.2 V) ensures reliable turn-on with 3.3 V logic, though R_DS(on) increases to 5.7–8.5 mΩ at V_GS = 4.5 V. For minimal conduction loss, use a gate driver that supplies ≥10 V; for logic-level operation, verify thermal margin at target load current.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.95 V (typ) at 80 A and t_rr = 36 ns, offering lower forward drop than 100 V Schottkys but higher recovery charge (Q_rr = 41 nC). It eliminates component count and layout area but requires careful dead-time tuning to avoid shoot-through in synchronous rectifiers.

What is the significance of the "KSA2" suffix in the part number?

The "KSA2" suffix denotes Infineon's standard packaging and testing grade: RoHS-compliant, MSL1, 100% avalanche tested, and qualified per AEC-Q101 Rev D. It distinguishes this production version from earlier KSA1 (MSL2) or non-automotive variants, confirming full automotive reliability screening and green material compliance.