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Infineon Technologies IPP80N08S2L07AKSA1

Part No.:
IPP80N08S2L07AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP80N08S2L07AKSA1.pdf
Description:
MOSFET N-CH 75V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,714

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Product details

Overview

IPP80N08S2L07AKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 75 V VDS, 80 A continuous drain current at TC = 100 °C, and ultra-low RDS(on) of 4.8–6.8 mΩ at VGS = 10 V. It is AEC-Q101 qualified and designed for high-efficiency DC-DC conversion in automotive body control modules.

For engineers reviewing the IPP80N08S2L07AKSA1 datasheet, IPP80N08S2L07AKSA1 pinout, IPP80N08S2L07AKSA1 application, or IPP80N08S2L07AKSA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), 175 °C maximum junction temperature, avalanche ruggedness (EAS = 810 mJ), and thermal resistance RthJC = 0.5 K/W.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology to achieve low conduction and switching losses simultaneously. Its gate charge profile (Qg = 183–233 nC, Qgd = 69–83 nC) supports fast, controlled turn-on/turn-off in hard-switched topologies.

The integrated body diode exhibits trr = 95–120 ns and Qrr = 240–300 nC at IF = 80 A, enabling reliable synchronous rectification and freewheeling in buck converters and motor drives without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS75 V - Maximum blocking voltage compatible with 48 V automotive systems and industrial 24–48 V rails.
RDS(on) max @ VGS = 10 V6.8 mΩ - Enables <1.5 W conduction loss at 80 A, reducing heatsink requirements in high-current switches.
ID continuous @ TC = 100 °C80 A - Sustains full-rated load under under-hood thermal conditions without derating.
EAS810 mJ - Withstands single-pulse inductive energy without failure, critical for relay replacement and solenoid driving.
VGS(th)1.2–2.0 V - Fully enhanced by standard 3.3 V or 5 V microcontroller GPIOs, eliminating need for gate drivers in low-speed switching.
RthJC0.5 K/W - Allows direct mounting to heatsinks for efficient thermal transfer in compact power stages.
tr/tf55 ns / 22 ns - Supports >200 kHz switching in DC-DC converters while maintaining low EMI and gate drive loss.

Pinout & Package

IPP80N08S2L07AKSA1 is housed in a PG-TO220-3-1 package with through-hole mounting, featuring isolated tab (drain-connected) and standard three-terminal layout optimized for manual assembly and thermal interface to heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives logic-level gate drive; low input capacitance (Ciss = 5400 pF) minimizes driver loading.
2 (Drain)High-side or low-side switch nodeConnected to internal die backside; electrically tied to metal tab for direct heatsink coupling.
3 (Source)Power return referenceServes as local ground reference for gate drive and current sensing; low-inductance bondwire path.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive applications including engine bay and chassis modules with extended temperature cycling and humidity exposure.
Logic-level gate driveOperates fully enhanced from 3.3 V or 5 V sources, enabling direct MCU interfacing without level-shifting circuitry.
100% avalanche testedEach unit undergoes single-pulse avalanche stress test per production lot, ensuring robustness in inductive load switching.
Green package (lead-free)Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 rating up to 260 °C peak reflow.
Ultra-low RDS(on)Reduces conduction loss by >30% vs. prior-generation 75 V MOSFETs, improving efficiency in 12–48 V battery-powered systems.

Applications

Automotive Body Control ModuleIndustrial DC-DC Converter

Use Scenario: Driving high-current loads such as HVAC actuators, seat motors, and headlight leveling systems in modern vehicles.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12–48 V loads with PWM duty cycles up to 100%.

Use Value: Eliminates need for discrete gate drivers and reduces PCB area by 40% compared to non-logic-level alternatives.

Use Scenario: Primary switch in 48 V-to-12 V synchronous buck converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Main power transistor operating at 200–500 kHz with precise gate timing enabled by low Qgd/Qg ratio.

Use Value: Achieves >95% peak efficiency at 60 A output due to sub-7 mΩ RDS(on) and low switching losses.

Motor Drive Half-BridgeEnergy Storage System Switch

Use Scenario: Low-side switch in brushed DC motor H-bridge circuits for power tools and automated machinery.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch handling bidirectional current and regenerative braking energy.

Use Value: Survives repetitive inductive kickback (trr < 120 ns, Qrr < 300 nC) without snubber networks.

Use Scenario: Isolation and protection switch between lithium-ion battery packs and inverters in UPS and solar storage systems.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactors, supporting hot-swap and fault isolation functions.

Use Value: Enables <10 ms response time and >100,000-cycle lifetime versus <10,000 cycles for electromechanical relays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level 75 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N08S2L07Same die, PG-TO263-3-2 surface-mount package; RthJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO-220.Better suited for automated SMT production and space-constrained PCBs; requires thermal pad layout.Select when board-level automation and lower profile are prioritized over manual serviceability.
STP80NF55-08Higher RDS(on) (8.0 mΩ max), higher Qg (190 nC), no AEC-Q101 qualification; same TO-220-3 package.Limited to industrial/commercial use; not validated for automotive temperature cycling or humidity testing.Select only for cost-sensitive non-automotive designs where 175 °C operation and automotive reliability are not required.

Compared with IPB80N08S2L07 and STP80NF55-08, IPP80N08S2L07AKSA1 uniquely combines AEC-Q101 compliance, 0.5 K/W RthJC, and logic-level drive in a through-hole TO-220 package-making it optimal for serviceable, thermally demanding automotive power stages.

Availability

IPP80N08S2L07AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and energy storage system switches requiring stable component supply across multi-year production programs.

Supply support for IPP80N08S2L07AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, high-reliability switching in automotive and industrial power conversion systems.

FAQ

Is IPP80N08S2L07AKSA1 pin-compatible with IPP80N08S2L07?

No. While both share identical electrical specifications and die, IPP80N08S2L07AKSA1 uses PG-TO220-3-1 packaging with through-hole leads, whereas IPP80N08S2L07 uses PG-TO263-3-2 surface-mount packaging. Mechanical footprint, soldering method, and thermal interface differ fundamentally.

What is the maximum safe operating temperature for continuous use?

The device supports continuous operation up to Tj = 175 °C, verified by AEC-Q101 stress testing. At TC = 100 °C, it delivers full 80 A drain current; derating begins above that case temperature per the published ID = f(TC) curve.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's Ciss = 5400 pF and Qgd/Qgs ratio make it susceptible to oscillation without proper gate drive impedance control.

Can IPP80N08S2L07AKSA1 replace mechanical relays in battery disconnect applications?

Yes. Its 80 A continuous rating, 320 A pulsed capability, 810 mJ avalanche energy, and 100% production-tested ruggedness enable solid-state replacement of 60–80 A automotive relays, delivering faster response, silent operation, and >10× cycle life.

IPP80N08S2L07AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
233 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP80N08S2L07AKSA1 FAQ

1.How can I place an order for IPP80N08S2L07AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N08S2L07AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N08S2L07AKSA1 reliable?

The price and inventory of IPP80N08S2L07AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N08S2L07AKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N08S2L07AKSA1 transactions.

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IPP80N08S2L07AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N08S2L07AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N08S2L07AKSA1?

For technical support, including IPP80N08S2L07AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N08S2L07AKSA1 requirements.

6.How does Aetrix verify that IPP80N08S2L07AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N08S2L07AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N08S2L07AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N08S2L07AKSA1?

All IPP80N08S2L07AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N08S2L07AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N08S2L07AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N08S2L07AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP80N08S2L07AKSA1 Tags

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