Infineon Technologies IPP80P04P405AKSA1

Overview

IPP80P04P405AKSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-current DC-DC conversion and load switching in automotive and industrial power systems. It delivers -80 A continuous drain current at T_C = 25 °C, 4.0–5.2 mΩ R_DS(on) at V_GS = -10 V, and -40 V V_(BR)DSS, operating up to +175 °C with AEC-Q101 qualification and 100% avalanche testing.

For engineers reviewing the IPP80P04P405AKSA1 datasheet, IPP80P04P405AKSA1 pinout, IPP80P04P405AKSA1 application, or IPP80P04P405AKSA1 equivalent, key selection criteria include its TO-220-3 package thermal resistance (R_thJC = 1.2 K/W), gate plateau voltage (-5.2 V), and diode forward voltage (-1.0 to -1.3 V at -80 A) for synchronous rectification and reverse polarity protection designs.

Technical Context

This device implements an OptiMOS®-P2 silicon process for low R_DS(on) and fast switching in high-side and low-side configurations. Its -40 V breakdown voltage and -2.0 to -4.0 V gate threshold enable robust gate drive compatibility with standard 5 V or 3.3 V logic-level controllers in 12 V/24 V automotive systems.

Dynamic parameters include C_iss = 7900–10300 pF, Q_g = 116–151 nC, and t_r/t_f = 24/65 ns, supporting efficient operation in hard-switched buck converters and motor control H-bridges where low gate charge minimizes driver losses and improves EMI behavior.

Key Specifications

Pinout & Package

IPP80P04P405AKSA1 uses the PG-TO220-3-1 package: a through-hole, 3-terminal plastic housing with isolated tab (drain-connected), standardized for mechanical mounting and heatsink interface. Thermal resistance from junction to case is 1.2 K/W, enabling high-power dissipation when mounted on aluminum heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF9540NPBF and STP80PF55, IPP80P04P405AKSA1 provides superior current density, automotive-grade reliability, and lower thermal impedance-making it the preferred choice for high-efficiency, safety-critical 12–24 V power switching where space, heat, and lifetime are constrained.

Availability

IPP80P04P405AKSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC distribution, server OR-ing circuits, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for IPP80P04P405AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This device belongs to the OptiMOS®-P2 family of P-channel MOSFETs, engineered specifically for high-current, high-reliability power switching in automotive and industrial 12 V/24 V systems where low R_DS(on), ruggedness, and qualification compliance are mandatory.

FAQ

What is the maximum safe operating temperature for IPP80P04P405AKSA1?

The device is rated for junction temperatures from -55 °C to +175 °C. Operation at +175 °C requires strict thermal design: case temperature must remain ≤100 °C under full load, verified using R_thJC = 1.2 K/W and measured heatsink interface resistance. Derating curves in the datasheet define safe current limits above 100 °C case temperature.

Is IPP80P04P405AKSA1 suitable for synchronous rectification in DC-DC converters?

Yes-it supports synchronous rectification in buck or flyback topologies when used as a low-side switch. Its V_SD = -1.0 to -1.3 V at -80 A and fast t_f = 65 ns minimize reverse recovery loss and switching transition time, though external gate control timing must account for its -5.2 V gate plateau voltage to avoid shoot-through.

Does IPP80P04P405AKSA1 require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance (C_iss = 7.9–10.3 nF). Without it, fast edge rates may induce oscillation or EMI, especially in high-frequency (>100 kHz) PWM applications or when driving from low-impedance microcontroller outputs.

Can IPP80P04P405AKSA1 replace an N-channel MOSFET in high-side switching?

No-it is a P-channel device intended for high-side switching *without* a charge pump, unlike N-channel MOSFETs which require gate voltage boosting above the source. Its -40 V V_(BR)DSS and -80 A rating make it suitable for direct high-side 12 V/24 V loads, but it cannot substitute for N-channel devices in low-side or bootstrap-driven configurations without circuit redesign.