Infineon Technologies IPP80P04P4L04AKSA1
- Part No.:
- IPP80P04P4L04AKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP80P04P4L04AKSA1.pdf
- Description:
- MOSFET P-CH 40V 80A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:2,581
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPP80P04P4L04AKSA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET rated for -40 V VDS, 80 A continuous drain current at TC = 25 °C, and 4.4 mΩ RDS(on) at VGS = -10 V. It features AEC qualification, 175 °C maximum operating temperature, and 100% single-pulse avalanche testing-designed for high-reliability automotive power switching in DC-DC converters and motor control H-bridges.
For engineers reviewing the IPP80P04P4L04AKSA1 datasheet, IPP80P04P4L04AKSA1 pinout, IPP80P04P4L04AKSA1 application, or IPP80P04P4L04AKSA1 equivalent, key selection criteria include RDS(on) at -4.5 V gate drive, thermal resistance (RthJC = 1.2 K/W), avalanche energy (EAS = 60 mJ), and TO-220-3-1 package compatibility with industrial-grade heatsinking.
Technical Context
This MOSFET employs Infineon's OptiMOS™-P2 silicon process optimized for low gate charge (Qg = 135–176 nC) and reduced reverse transfer capacitance (Crss = 100–200 pF), enabling fast switching with minimal Miller-induced turn-off delay. Its logic-level gate threshold (VGS(th) = -1.2 to -2.2 V) ensures full enhancement with standard 3.3 V/5 V microcontroller outputs.
The integrated body diode supports synchronous rectification and freewheeling in buck converters and half-bridge inverters, with verified reverse recovery time (trr = 65 ns) and Qrr = 90 nC under IF = -50 A, diF/dt = -100 A/µs conditions-critical for minimizing switching losses in high-frequency power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage in high-side switch configurations with 24 V automotive rails. |
| RDS(on) @ VGS = -10 V | 4.4 mΩ max - Enables <1.5 W conduction loss at 80 A, reducing heatsink requirements in space-constrained modules. |
| ID continuous @ TC = 25 °C | -80 A - Sustains peak load currents in starter solenoid drivers and battery disconnect switches without derating. |
| EAS | 60 mJ - Withstands inductive kickback from 40 A loads with L ≤ 75 µH, eliminating need for external snubbers in relay replacement designs. |
| Qg | 135–176 nC - Determines gate driver power requirement; compatible with standard 1 A peak drivers at 100 kHz switching. |
| RthJC | 1.2 K/W - Allows direct mounting to aluminum heatsinks; junction-to-case thermal path dominates total thermal budget. |
| trr | 65 ns - Limits diode reverse recovery loss during hard commutation in synchronous buck topologies. |
Pinout & Package
IPP80P04P4L04AKSA1 uses the PG-TO220-3-1 package: a through-hole, insulated tab variant with three leads-Drain (pin 1), Source (pin 2), Gate (pin 3)-and an electrically isolated metal tab thermally connected to the Drain. The package meets MSL1 reflow rating up to 260 °C and supports vertical PCB mounting with mechanical screw-down heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current-carrying terminal, tied to internal die substrate | Connected to high-voltage rail or motor phase; requires isolation from heatsink unless using insulating washer. |
| Pin 2 (Source) | Reference node for gate drive and current sensing | Typically grounded in low-side switch; enables shunt-based current monitoring with minimal common-mode voltage swing. |
| Pin 3 (Gate) | Control electrode for channel modulation | Driven by logic-level signal; gate resistor value selected to balance EMI and switching speed given Qg = 135–176 nC. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST. |
| 100% single-pulse avalanche tested | Each unit passes EAS = 60 mJ stress test at production, ensuring robustness against inductive transients without derating. |
| Logic-level gate drive (VGS(th) ≤ -2.2 V) | Operates fully enhanced with 3.3 V MCU GPIOs, eliminating need for level-shifting or gate driver ICs in cost-sensitive modules. |
| Green RoHS-compliant package | Halogen-free, lead-free construction compliant with EU Directive 2011/65/EU and JESD204B material declarations. |
| 175 °C maximum junction temperature | Supports operation in engine bay environments with ambient temperatures up to 125 °C and thermal margin for transient overloads. |
Applications
| Automotive Body Control Module (BCM) | Industrial 24 V DC Motor Driver |
|---|---|
Use Scenario: High-side power distribution for headlight leveling actuators and seat position memory circuits. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12–24 V loads with integrated diagnostics via source-sense resistor. Use Value: Eliminates need for charge pump or high-side driver IC due to logic-level gate compatibility and 80 A surge capability. | Use Scenario: Half-bridge leg in brushed DC motor controllers for warehouse automation conveyors. IC Role / Device Role / Timing Role: Low-side switching element with fast tf = 65 ns and low Coss = 2533–3800 pF for efficient PWM at 20–50 kHz. Use Value: Reduces conduction loss by 32% vs. legacy 6 mΩ MOSFETs, lowering thermal design complexity in enclosed enclosures. |
| 48 V Mild Hybrid Battery Disconnect Switch | Server PSU OR-ing Diode Replacement |
Use Scenario: Isolation of 48 V Li-ion battery packs during fault conditions or maintenance. IC Role / Device Role / Timing Role: Bidirectional blocking switch with avalanche-rated safe operating area (SOA) for short-circuit events. Use Value: Replaces mechanical contactors with solid-state reliability, achieving <10 ms response time and zero arcing. | Use Scenario: Reverse polarity protection and hot-swap redundancy in dual-input server power supplies. IC Role / Device Role / Timing Role: Low-VSD (-1.0 to -1.3 V) synchronous rectifier replacing Schottky diodes in 12 V output rails. Use Value: Cuts forward conduction loss by 65% versus 40 V/80 A Schottky, improving efficiency by 0.8% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80PF55 | RDS(on) = 5.5 mΩ @ -10 V; no AEC-Q101 qualification; higher Qg = 220 nC | Targeted at industrial UPS and solar inverters-not validated for automotive temperature cycling or humidity testing | Select only if AEC compliance is unnecessary and gate drive strength exceeds 1.5 A peak. |
| IRF4905PBF | RDS(on) = 20 mΩ @ -10 V; 55 V rating; non-logic-level (VGS(th) = -2 to -4 V); obsolete per IR datasheet | Suitable for legacy 12 V low-power loads but incompatible with 3.3 V MCU control and high-current thermal demands | Not recommended for new designs-lacks modern SOA, avalanche rating, and thermal performance. |
Compared with STP80PF55 and IRF4905PBF, IPP80P04P4L04AKSA1 delivers superior thermal robustness (RthJC = 1.2 K/W vs. ≥2.0 K/W), certified automotive reliability, and lower switching losses-making it the optimal choice for next-generation 24/48 V vehicle electrification systems.
Availability
IPP80P04P4L04AKSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and 48 V mild hybrid battery management systems requiring stable component supply across multi-year production cycles.
Supply support for IPP80P04P4L04AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOS™-P2 product line-engineered specifically for high-efficiency, high-reliability P-channel switching in automotive 12 V/24 V/48 V architectures and industrial DC power distribution.
FAQ
What is the maximum gate-source voltage rating for IPP80P04P4L04AKSA1?
The absolute maximum VGS is ±16 V per datasheet Rev. 1.0, page 2. Operation beyond this range risks permanent gate oxide damage. For AEC-Q101 compliance, gate drive must remain within +5 V/-16 V limits during all operational modes, including transients and startup sequences.
Can IPP80P04P4L04AKSA1 be used in parallel configurations?
Yes-its positive temperature coefficient for RDS(on) (see Fig. 6, page 5) ensures inherent current sharing above 100 °C. Parallel operation requires matched layout, identical gate resistors, and symmetrical thermal mounting to maintain <5% current imbalance at 80 A per device.
Is the TO-220-3-1 package electrically insulated?
Yes-the PG-TO220-3-1 variant used in IPP80P04P4L04AKSA1 features an electrically isolated metal tab. The tab is internally connected to the Drain but insulated from the PCB mounting surface, allowing direct heatsink attachment without additional isolation hardware.
Does this MOSFET require a gate resistor for EMI suppression?
Yes-a series gate resistor (typically 10–47 Ω) is required to dampen ringing caused by gate-drain capacitance (Crss) interacting with PCB trace inductance. Values are selected based on measured VGS overshoot and switching speed trade-offs, with 22 Ω providing optimal EMI/conduction loss balance per application note AN2015-07.
IPP80P04P4L04AKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 176 nC @ 10 V
- Vgs (Max):
- +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
IPP80P04P4L04AKSA1 FAQ
1.How can I place an order for IPP80P04P4L04AKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP80P04P4L04AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP80P04P4L04AKSA1 reliable?
The price and inventory of IPP80P04P4L04AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80P04P4L04AKSA1 is usually 5 days.
3.What payment methods are accepted for IPP80P04P4L04AKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80P04P4L04AKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP80P04P4L04AKSA1?
IPP80P04P4L04AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP80P04P4L04AKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP80P04P4L04AKSA1?
For technical support, including IPP80P04P4L04AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80P04P4L04AKSA1 requirements.
6.How does Aetrix verify that IPP80P04P4L04AKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP80P04P4L04AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80P04P4L04AKSA1 meets industry standards.
7.What is the process for return or replacement of IPP80P04P4L04AKSA1?
All IPP80P04P4L04AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80P04P4L04AKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP80P04P4L04AKSA1 part is unused and in its original packaging.
Return procedure for IPP80P04P4L04AKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPP80P04P4L04AKSA1 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

