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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80R600P7XKSA1

Name: IPP80R600P7XKSA1
Brand: Infineon Technologies
SKU: IPP80R600P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80R600P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80R600P7XKSA1.pdf

Description:: MOSFET N-CH 800V 8A TO220-3

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Product details

Overview

IPP80R600P7XKSA1 from Infineon is an 800V superjunction N-channel CoolMOS™ P7 power MOSFET in PG-TO220 package, featuring R_DS(on) max 0.60 Ω at V_GS = 10 V, Q_g typ 20 nC, V_GS(th) typ 3 V (±0.5 V variation), integrated Zener ESD protection, and JEDEC-qualified industrial reliability. It serves as a high-voltage switching element in flyback and PFC stages for LED lighting, low-power adapters, and solar auxiliary supplies.

For engineers reviewing the IPP80R600P7XKSA1 datasheet, IPP80R600P7XKSA1 pinout, IPP80R600P7XKSA1 application, or IPP80R600P7XKSA1 equivalent, key selection criteria include its 800V V_DS, low E_oss (2.0 µJ @ 500 V), fast dv/dt ruggedness (100 V/ns), and gate-drive ease enabled by 3 V threshold and low C_iss/C_oss.

Technical Context

This MOSFET employs Infineon's 4th-generation superjunction architecture optimized for hard- and soft-switching topologies. Its low R_DS(on) × E_oss figure-of-merit enables high efficiency at 50–500 kHz switching frequencies while maintaining robust avalanche capability (E_AS = 20 mJ) and diode commutation speed (di_f/dt up to 50 A/µs).

The device integrates a Zener-protected gate structure with ±0.5 V V_GS(th) tolerance and operates across –55 °C to 150 °C junction temperature. Thermal resistance R_thJC is 2.1 °C/W, supporting 60 W continuous power dissipation at T_C = 25 °C with stable SOA up to 10 ms pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands DC bus voltages up to 800 V, suitable for universal-input offline SMPS with 400 V DC link.
R_DS(on), max	0.60 Ω @ V_GS = 10 V, T_j = 25 °C - Enables low conduction loss in <10 A peak-current applications like 30–60 W flybacks.
Q_g, typ	20 nC - Reduces gate drive power and simplifies driver selection; supports efficient operation with standard 13 V gate drive.
E_oss	2.0 µJ @ 500 V - Low output charge minimizes turn-off losses in high-frequency PFC and resonant converters.
V_GS(th), typ	3 V with ±0.5 V variation - Ensures consistent turn-on behavior across temperature and production lots, easing parallel operation.
ESD Class (HBM)	Class 2 - Integrated Zener protection reduces handling sensitivity and field failure risk during assembly.
dv/dt Ruggedness	100 V/ns - Resists false triggering in noisy high-dv/dt environments such as half-bridge snubberless designs.

Pinout & Package

Package: PG-TO220-3 (plastic through-hole, isolated tab). Tab is electrically connected to Drain (Pin 2). Standard mounting torque: 60 N·cm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; low input capacitance (C_iss = 570 pF) enables fast, low-loss switching with minimal driver stress.
Pin 2 (Tab)	Drain	Main high-voltage power terminal; thermally and electrically connected to metal tab for direct heatsinking and high-current return path.
Pin 3	Source	Reference node for gate drive and current sensing; tied to PCB ground plane in most flyback/PFC layouts.

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss	Enables >94% efficiency in 65 kHz flyback designs without compromising thermal margin or requiring active cooling.
V_GS(th) = 3 V ± 0.5 V	Reduces gate drive voltage headroom requirement and improves consistency in multi-MOSFET parallel configurations.
Integrated Zener ESD protection	Eliminates need for external gate protection components, lowering BOM count and improving manufacturing yield.
Fully JEDEC-qualified for industrial use	Validated for 150 °C continuous operation and thermal cycling, supporting long-lifetime deployments in harsh environments.
Optimized for soft-switching PFC	Low C_oss (11 pF) and Co(tr) (252 pF) support zero-voltage switching transitions in boost and totem-pole topologies.

Applications

LED Lighting Driver

USB-C Adapter Primary Switch

Use Scenario: 40 W quasi-resonant flyback powering smart LED luminaires with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main high-voltage switching transistor controlling energy transfer into transformer primary.

Use Value: Low E_oss and 100 V/ns dv/dt ruggedness enable clean switching under wide input range and reduce EMI filter size.

Use Scenario: 65 W compact USB-C PD adapter using active-clamp flyback with 800 V bulk capacitor.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–130 kHz with synchronous rectification on secondary.

Use Value: Tight V_GS(th) tolerance ensures reliable start-up and stable regulation across temperature and line variations.

Industrial AUX Power Supply

Solar Microinverter PFC Stage

Use Scenario: 15 W isolated auxiliary supply for PLC I/O modules, powered from 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck-derived topology delivering 12 V/1.25 A.

Use Value: R_thJC = 2.1 °C/W allows direct tab mounting to chassis, eliminating dedicated heatsink in space-constrained enclosures.

Use Scenario: Two-phase interleaved boost PFC stage in 300 W microinverter, accepting 30–60 V PV input.

IC Role / Device Role / Timing Role: Fast-switching boost switch rated for 800 V blocking in high-efficiency front-end conversion.

Use Value: Low Q_gd/Q_g ratio (8/20 nC) improves controllability during light-load discontinuous mode and reduces shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80R650P7XKSA1	R_DS(on) max 0.65 Ω; otherwise identical P7 platform specs and pinout.	Higher conduction loss limits use to ≤35 W flyback or lower-current PFC designs.	Select when cost sensitivity outweighs marginal efficiency gain and thermal margin is sufficient.
IPW65R080CFD7XKSA1	650 V rating; 0.08 Ω R_DS(on); CoolSiC™ hybrid MOSFET with SiC diode; higher V_GS(th) (4.5 V).	Not suitable for 800 V bus; requires higher gate voltage; superior for >100 kHz, high-efficiency PFC only.	Choose only if system uses ≤650 V DC link and demands ultra-low switching loss at >150 kHz.

Compared with IPP80R650P7XKSA1, this part delivers lower conduction loss and better thermal headroom; versus IPW65R080CFD7XKSA1, it provides full 800 V capability and simpler gate drive but trades off some high-frequency switching efficiency.

Availability

IPP80R600P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C power adapters, and industrial auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP80R600P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 18 years of superjunction MOSFET innovation.

This part belongs to the CoolMOS™ P7 series-designed specifically for high-efficiency, high-density offline SMPS in consumer, industrial, and renewable energy systems where 800 V blocking, low E_oss, and robust manufacturability are critical.

FAQ

What is the maximum continuous drain current for IPP80R600P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PG-TO220 package and ensures safe operation within R_thJC = 2.1 °C/W and junction temperature ≤150 °C.

Does IPP80R600P7XKSA1 require external gate protection?

No-this device integrates a Zener diode for gate-source ESD protection (HBM Class 2), eliminating the need for external TVS or resistors in standard gate drive circuits. External ferrite beads are recommended only for paralleling to suppress gate oscillation.

Can IPP80R600P7XKSA1 be used in totem-pole PFC topologies?

Yes-it is explicitly recommended for PFC stages in consumer and solar applications. Its low C_oss (11 pF), fast reverse recovery (t_rr = 640 ns), and high dv/dt ruggedness (100 V/ns) support reliable zero-voltage switching in bidirectional totem-pole configurations up to 100 kHz.

What is the typical reverse diode forward voltage at 3.4 A and 25°C?

The typical source-drain diode forward voltage (V_SD) is 0.9 V at I_F = 3.4 A and T_j = 25 °C, per Table 7. This value increases to ~1.2 V at 125 °C, confirming low conduction loss during freewheeling in flyback and LLC resonant converters.

IPP80R600P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP80R600P7XKSA1 FAQ

1.How can I place an order for IPP80R600P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80R600P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80R600P7XKSA1 reliable?

The price and inventory of IPP80R600P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80R600P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80R600P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80R600P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80R600P7XKSA1?

IPP80R600P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80R600P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80R600P7XKSA1?

For technical support, including IPP80R600P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80R600P7XKSA1 requirements.

6.How does Aetrix verify that IPP80R600P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80R600P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80R600P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80R600P7XKSA1?

All IPP80R600P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80R600P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80R600P7XKSA1 part is unused and in its original packaging.

Return procedure for IPP80R600P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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