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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80R750P7XKSA1

Name: IPP80R750P7XKSA1
Brand: Infineon Technologies
SKU: IPP80R750P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80R750P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80R750P7XKSA1.pdf

Description:: MOSFET N-CH 800V 7A TO220-3

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Product details

Overview

IPP80R750P7XKSA1 from Infineon is an 800V superjunction N-channel MOSFET in PG-TO220 package, optimized for hard/soft-switching flyback and PFC stages. It delivers R_DS(on) = 0.75 Ω (max), Q_g = 17 nC (typ), V_GS(th) = 3 V (typ), and integrated Zener ESD protection. Used in LED lighting drivers, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPP80R750P7XKSA1 datasheet, IPP80R750P7XKSA1 pinout, IPP80R750P7XKSA1 application, or IPP80R750P7XKSA1 equivalent, key selection criteria include 800V blocking capability, low gate charge for high-frequency switching, tight V_GS(th) tolerance (±0.5 V), and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ P7 device employs superjunction cell architecture with optimized charge balance to achieve best-in-class R_DS(on) × E_oss figure-of-merit. Its 3 V gate threshold enables direct drive from 3.3 V/5 V controllers without level-shifting.

The integrated Zener diode provides ±2 kV HBM ESD protection, and its 100 V/ns dv/dt ruggedness supports robust operation in noisy high-voltage environments. Thermal resistance R_thJC = 2.4 °C/W ensures efficient heat transfer to heatsinks in TO-220 mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC link.
R_DS(on), max	0.75 Ω at T_j = 25°C - Enables <7 W conduction loss at 7 A ID, reducing heatsink requirements.
Q_g, typ	17 nC - Low gate drive energy allows use with standard gate drivers at >100 kHz switching frequencies.
V_GS(th), typ	3 V with ±0.5 V variation - Ensures consistent turn-on across temperature and production lots, simplifying gate drive design.
E_oss @ 500 V	1.6 µJ - Reduces turn-off losses in hard-switched topologies and improves light-load efficiency in flyback converters.
C_iss, typ	460 pF - Predictable input capacitance aids accurate gate drive loop stability analysis and snubber sizing.
ESD Class (HBM)	Class 2 (≥2 kV) - Integrated Zener protection eliminates need for external ESD components in assembly.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab). Tab is Drain (Pin 2); Gate is Pin 1; Source is Pin 3. Mounting torque: 60 N·cm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input accepting 0–20 V logic-level signals; requires ≤12 Ω series gate resistor for optimal switching.
Pin 2 (Tab / Drain)	High-voltage power output	Electrically connected to drain; must be insulated from heatsink unless system ground-referenced; handles full 800 V blocking.
Pin 3 (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current (7 A continuous) and reverse diode conduction (5.1 A).

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss	Enables >90% efficiency in 30–65 W flyback designs while maintaining thermal margin at 100 kHz.
V_GS(th) = 3 V ±0.5 V	Eliminates need for gate voltage clamping or trimming in production; supports single-supply 5 V microcontroller drive.
Integrated Zener ESD protection	Reduces BOM count by removing external TVS diodes; qualified to JEDEC JESD22-A114F (2 kV HBM).
dv/dt ruggedness = 100 V/ns	Prevents false turn-on during fast voltage transients in high-noise industrial PFC circuits.
JEDEC industrial qualification	Validated for continuous operation from –55 °C to +150 °C junction temperature in uncontrolled ambient environments.

Applications

LED Lighting Driver

USB-C Adapter Primary Switch

Use Scenario: Constant-current flyback converter powering 40–60 W LED modules in commercial downlights.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–130 kHz with valley-switching control.

Use Value: 0.75 Ω R_DS(on) and 1.6 µJ E_oss reduce total losses by 1.2 W vs. prior-gen 800 V MOSFETs, enabling passive cooling.

Use Scenario: Universal-input (90–264 V_AC) 45 W USB-C PD adapter with active clamp flyback.

IC Role / Device Role / Timing Role: Main power switch handling 600 V transient spikes during line surges and EMI filter ringing.

Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during fast line transients, improving surge immunity to IEC 61000-4-5 Level 3.

Auxiliary Power Supply

Single-Stage PFC for Consumer Audio

Use Scenario: Standby 5 V/1 A auxiliary supply in smart TV mainboard, powered directly from rectified AC line.

IC Role / Device Role / Timing Role: High-voltage switch in discontinuous conduction mode (DCM) flyback delivering isolated bias rails.

Use Value: Tight 3 V ±0.5 V V_GS(th) ensures reliable startup at low V_AC (90 V) while avoiding shoot-through at high V_AC (264 V).

Use Scenario: Single-stage PFC + LLC combo in premium home audio amplifier, targeting THD <5% at full load.

IC Role / Device Role / Timing Role: Boost switch in critical conduction mode (CrCM) PFC stage operating up to 200 kHz.

Use Value: Low Q_g (17 nC) and C_iss (460 pF) minimize gate drive losses and enable stable CrCM operation without external gate resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80R650P7XKSA1	R_DS(on) = 0.65 Ω (max), same package and gate characteristics	Better conduction loss at high ambient temperatures; higher cost per unit	Select when thermal budget is constrained and ID >5.5 A average is sustained.
IPW65R080CFD7XKSA1	650 V rating, 0.08 Ω R_DS(on), CoolSiC™ hybrid structure, lower Q_g (13 nC)	Not rated for 800 V systems; requires derating above 400 V DC link	Choose only for 230 V_AC-only designs where peak V_DS stays below 600 V and ultra-low R_DS(on) is critical.

Compared with IPP80R650P7XKSA1, this part trades 0.1 Ω higher R_DS(on) for lower gate charge and identical thermal performance-ideal for medium-power flyback where switching loss dominates. Versus IPW65R080CFD7XKSA1, it provides essential 800 V headroom for universal-input reliability but with higher conduction loss.

Availability

IPP80R750P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C power adapters, and auxiliary power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPP80R750P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline SMPS in consumer, lighting, and industrial applications.

FAQ

What is the maximum continuous drain current for IPP80R750P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 4.6 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (2.4 °C/W) and safe operating area limits under DC conditions.

Does IPP80R750P7XKSA1 require external gate protection?

No external gate protection is required: the device integrates a Zener diode providing ±2 kV HBM ESD protection (Class 2), and its gate oxide is rated for ±30 V V_GS. A 10–12 Ω series gate resistor is recommended for EMI suppression and ringing control.

Can IPP80R750P7XKSA1 be paralleled with identical units?

Yes-its tight V_GS(th) tolerance (±0.5 V) and positive temperature coefficient of R_DS(on) support stable current sharing. Infineon recommends using individual ferrite beads on each gate line or separate totem-pole drivers to suppress oscillation during parallel operation.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge is 5.2 µC, measured at V_R = 400 V, I_F = 1.4 A, and di_F/dt = 50 A/µs (Table 7). This value is critical for estimating commutation losses in quasi-resonant and active-clamp topologies.

IPP80R750P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 140µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 460 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 51W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP80R750P7XKSA1 FAQ

1.How can I place an order for IPP80R750P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80R750P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80R750P7XKSA1 reliable?

The price and inventory of IPP80R750P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80R750P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80R750P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80R750P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80R750P7XKSA1?

IPP80R750P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80R750P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80R750P7XKSA1?

For technical support, including IPP80R750P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80R750P7XKSA1 requirements.

6.How does Aetrix verify that IPP80R750P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80R750P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80R750P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80R750P7XKSA1?

All IPP80R750P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80R750P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80R750P7XKSA1 part is unused and in its original packaging.

Return procedure for IPP80R750P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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