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Infineon Technologies IPP90R1K0C3XKSA1

Part No.:
IPP90R1K0C3XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP90R1K0C3XKSA1.pdf
Description:
MOSFET N-CH 900V 5.7A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:5,451

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Product details

Overview

IPP90R1K0C3XKSA1 from Infineon Technologies is a 900 V, 1.0 Ω (max @ 25 °C) CoolMOS™ superjunction power MOSFET in PG-TO220 package, optimized for quasi-resonant flyback and forward SMPS topologies in PC silverbox and industrial power supplies. It delivers ultra-low gate charge (34 nC typ), extreme dv/dt ruggedness (50 V/ns), and high peak current capability (12 A pulsed).

For engineers reviewing the IPP90R1K0C3XKSA1 datasheet, IPP90R1K0C3XKSA1 pinout, IPP90R1K0C3XKSA1 application, or IPP90R1K0C3XKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, avalanche energy rating (97 mJ single-pulse), gate charge profile, and TO220 thermal resistance (1.4 K/W junction-to-case).

Technical Context

This 900 V superjunction MOSFET employs CoolMOS™ charge-compensation technology to achieve low RDS(on) × Qg figure-of-merit (0.78 Ω × 34 nC = 26.5 Ω·nC typ). Its robust dv/dt rating (50 V/ns) enables reliable operation in hard-switched and resonant converters without snubbers.

The device integrates a fast-recovery body diode (trr = 340 ns, Qrr = 4.1 µC) with controlled reverse recovery behavior, supporting ZVS/ZCS transitions in QR flyback and LLC designs. Thermal performance is defined by RthJC = 1.4 K/W and RthJA = 62 K/W (leaded).

Key Specifications

ParameterValue and Actual Design Meaning
VDS max900 V - supports 400 V DC-link systems with ≥2× voltage margin for surge and ringing
RDS(on) max @ 25 °C1.0 Ω - enables low conduction loss at 3.3 A continuous drain current (TC = 25 °C)
Qg typ34 nC - reduces gate drive power and switching losses in high-frequency SMPS (>100 kHz)
EAS single-pulse97 mJ - withstands unclamped inductive switching stress without failure in flyback snubberless designs
dv/dt ruggedness50 V/ns - prevents spurious turn-on during fast voltage transients in high-side configurations
trr / Qrr340 ns / 4.1 µC - minimizes diode recovery loss and EMI in discontinuous conduction mode (DCM) operation
RthJC1.4 K/W - allows 89 W power dissipation at TC = 25 °C, critical for thermally constrained TO220 layouts

Pinout & Package

Package: PG-TO220 (3-pin, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal tab is electrically connected to Drain and serves as primary heat path to heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives 10 V logic-level drive; low input capacitance (Ciss = 850 pF) eases driver selection
Pin 2 (Drain / Tab)High-voltage power terminalConnected to heatsink; requires electrical isolation when mounted to chassis or shared thermal plane
Pin 3 (Source)Reference node for gate driveServes as return path for gate current and sense point for source degeneration or current monitoring

Key Features

FeatureDesign Value
Ultra-low RDS(on) × Qg26.5 Ω·nC typ - directly improves efficiency in 65–300 kHz SMPS by reducing combined conduction + switching loss
Extreme dv/dt rating50 V/ns - eliminates need for external gate resistors or RC snubbers in high-di/dt applications
JEDEC-qualified reliabilityQualified per J-STD-20/JESD22 - ensures long-term stability in industrial and consumer power supplies
Low Qgd/Qg ratio15 nC / 34 nC ≈ 44% - enhances Miller immunity and enables faster, more predictable turn-off
Enhanced body diode softnessControlled reverse recovery (Irrm = 21 A, trr = 340 ns) - reduces voltage overshoot and EMI in QR flyback freewheeling

Applications

PC Silverbox Power SupplyIndustrial SMPS

Use Scenario: 300–500 W quasi-resonant flyback converter in desktop PC power supplies with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC-link, operating in boundary conduction mode with variable frequency control.

Use Value: Low Qg and high dv/dt ruggedness enable stable operation across full load range without gate oscillation or false triggering.

Use Scenario: 200–400 W forward converter in programmable logic controller (PLC) power modules requiring high reliability at 60 °C ambient.

IC Role / Device Role / Timing Role: Main power switch in synchronous rectified forward topology, driven by transformer-coupled gate driver.

Use Value: 97 mJ EAS rating and 1.4 K/W RthJC ensure robustness against output short-circuit and thermal cycling over 10-year service life.

Consumer AdapterLED Driver

Use Scenario: Compact 65 W USB-C PD adapter using active-clamp flyback architecture with 900 V clamp voltage.

IC Role / Device Role / Timing Role: Clamp switch absorbing leakage inductance energy during main switch off-time.

Use Value: 900 V V(BR)DSS and low Coss (42 pF) minimize clamp loss and improve ZVS initiation at light loads.

Use Scenario: 150 W constant-current LED driver for street lighting, operating in continuous conduction mode with 400 V bus.

IC Role / Device Role / Timing Role: High-side switch in buck-boost LED current regulator with PWM dimming interface.

Use Value: Stable RDS(on) up to 150 °C (2.1 Ω max) maintains consistent LED current regulation under thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP9NK90ZFP900 V, 1.1 Ω RDS(on), 42 nC Qg, Zener-protected gateHigher gate charge increases driver loss; lower dv/dt rating (25 V/ns) limits high-frequency usePreferred where gate protection is prioritized over efficiency in cost-sensitive consumer adapters
IXTH1N90P900 V, 1.2 Ω RDS(on), 28 nC Qg, planar constructionLower Qg but higher RDS(on); no integrated body diode optimization for QR operationUsed in fixed-frequency forward converters where diode recovery is less critical than gate drive simplicity

Compared with STP9NK90ZFP and IXTH1N90P, IPP90R1K0C3XKSA1 offers the lowest RDS(on) × Qg product and superior dv/dt ruggedness-making it optimal for high-efficiency, high-frequency QR flyback and industrial SMPS where thermal headroom and switching noise are tightly constrained.

Availability

IPP90R1K0C3XKSA1 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, consumer adapters, and LED drivers requiring stable component supply and long-term manufacturability.

Supply support for IPP90R1K0C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switched-mode power supplies operating above 65 kHz with stringent thermal and EMI constraints.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID is 3.6 A at TC = 100 °C, as specified in the absolute maximum ratings table. This value reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, and must be applied with appropriate heatsinking to maintain junction temperature below 150 °C.

Does IPP90R1K0C3XKSA1 have an integrated gate protection diode?

No, IPP90R1K0C3XKSA1 does not include an integrated gate-source Zener diode. Its gate oxide is rated for ±30 V, and external gate protection (e.g., 18 V TVS) is recommended in noisy environments or when driving with non-isolated controllers to prevent gate oxide rupture during transients.

How does the body diode performance compare to standard silicon MOSFETs?

This device features a tailored body diode with trr = 340 ns and Qrr = 4.1 µC at IF = 3.3 A, significantly softer and faster than conventional planar MOSFETs. Its reverse recovery is optimized for quasi-resonant operation, reducing voltage spikes and EMI in flyback freewheeling paths without requiring external Schottky catch diodes.

Is the PG-TO220 package lead-free and RoHS compliant?

Yes, IPP90R1K0C3XKSA1 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The package is qualified for wave soldering at 260 °C for 10 s at 1.6 mm from case, and its thermal interface meets JEDEC J-STD-20 reflow profiles for lead-free assembly processes.

IPP90R1K0C3XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
89W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP90R1K0C3XKSA1 FAQ

1.How can I place an order for IPP90R1K0C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP90R1K0C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP90R1K0C3XKSA1 reliable?

The price and inventory of IPP90R1K0C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP90R1K0C3XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP90R1K0C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP90R1K0C3XKSA1 transactions.

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4.How is shipping managed for IPP90R1K0C3XKSA1?

IPP90R1K0C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP90R1K0C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP90R1K0C3XKSA1?

For technical support, including IPP90R1K0C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP90R1K0C3XKSA1 requirements.

6.How does Aetrix verify that IPP90R1K0C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP90R1K0C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP90R1K0C3XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP90R1K0C3XKSA1?

All IPP90R1K0C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP90R1K0C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP90R1K0C3XKSA1 part is unused and in its original packaging.

Return procedure for IPP90R1K0C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP90R1K0C3XKSA1 Tags

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