Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP90R1K2C3XKSA2

Part No.:
IPP90R1K2C3XKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP90R1K2C3XKSA2.pdf
Description:
MOSFET N-CH 900V 5.1A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,798

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP90R1K2C3XKSA2 from Infineon Technologies is a 900 V, 1.2 Ω RDS(on) CoolMOS™ C3 superjunction power MOSFET in PG-TO220 package, optimized for quasi-resonant flyback and forward SMPS topologies. It delivers 5.1 A continuous drain current at TC = 25 °C, 28 nC total gate charge, and 68 mJ single-pulse avalanche energy-enabling high-efficiency, compact AC/DC adapters for PC silverbox and industrial SMPS.

For engineers reviewing the IPP90R1K2C3XKSA2 datasheet, IPP90R1K2C3XKSA2 pinout, IPP90R1K2C3XKSA2 application, or IPP90R1K2C3XKSA2 equivalent, key selection criteria include its 900 V V(BR)DSS, ultra-low Qg/RDS(on) figure-of-merit, dv/dt ruggedness up to 50 V/ns, and JEDEC-qualified reliability for high-voltage switching in thermally constrained environments.

Technical Context

This device implements a superjunction trench-gate structure with optimized charge compensation for reduced conduction and switching losses. Its 28 nC Qg and 12 nC Qgd enable fast, low-loss hard-switching at high frequencies, while the 1.5 K/W RthJC supports high-power density designs without forced cooling.

The integrated body diode exhibits 310 ns trr and 3.7 µC Qrr, making it suitable for synchronous rectification and ZVS-capable topologies. Its 50 V/ns dv/dt rating ensures robust operation under fast voltage transients in bridge-leg configurations.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS900 V - Withstands full mains-related DC link voltages (e.g., 400 V bus + 20% surge) in offline SMPS.
RDS(on), max @ 25 °C1.2 Ω - Enables <5.1 A continuous conduction with ≤6.2 W conduction loss at TC = 25 °C.
Qg, typ28 nC - Reduces gate drive power and enables use of low-cost, low-current drivers in 65–100 kHz QR flyback designs.
EAS, single pulse68 mJ - Supports reliable unclamped inductive switching in PFC and LLC primary-side applications.
RthJC1.5 K/W - Allows ≥50 W dissipation with ≤75 K junction-to-case temperature rise using standard TO220 heatsinking.
tr / tf20 ns / 40 ns - Minimizes switching transition time, reducing overlap loss in hard-switched converters.
VGS(th)2.5–3.5 V - Ensures clean turn-on with standard 5 V logic-level gate drivers and avoids spurious conduction near ground.

Pinout & Package

Package: PG-TO220 (3-pin, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless circuit topology requires common-drain configuration.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control electrodeReceives 10 V gate drive to fully enhance channel; 2.5–3.5 V threshold enables compatibility with 3.3 V/5 V controllers.
Pin 2 (Drain / Tab)High-voltage power terminalConnected directly to internal die drain; tab must be electrically isolated unless used as high-side switch return path.
Pin 3 (Source)Reference and return pathServes as signal reference for gate driver and current sense; low-inductance layout critical for dv/dt stability.

Key Features

FeatureDesign Value
Ultra-low RDS(on) × Qg FoM33.6 Ω·nC - Delivers best-in-class efficiency trade-off for 900 V MOSFETs in 65–130 kHz SMPS.
Extreme dv/dt ruggedness50 V/ns - Prevents false turn-on during high-slew-rate commutation in half-bridge and LLC resonant circuits.
JEDEC-qualified reliabilityJ-STD-20/JESD22 compliant - Validated for long-term operation in consumer and industrial power supplies per AEC-Q101 stress test conditions.
Integrated fast-recovery body diodetrr = 310 ns, Qrr = 3.7 µC - Reduces reverse recovery loss and EMI in quasi-resonant and active-clamp forward converters.

Applications

PC Silverbox Power SupplyIndustrial SMPS

Use Scenario: 300–500 W open-frame AC/DC power supply for desktop PCs and workstations.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback topology operating at 65–100 kHz.

Use Value: 1.2 Ω RDS(on) and 28 nC Qg reduce conduction and switching losses, enabling >88% efficiency at full load without active cooling.

Use Scenario: 200–400 W enclosed industrial power supply for PLCs and motor drives.

IC Role / Device Role / Timing Role: Main switch in forward converter with active clamp, handling 400 V DC bus and 100 °C ambient.

Use Value: 150 °C-rated RDS(on) (2.5 Ω max) and 1.5 K/W RthJC ensure stable operation under sustained thermal stress and wide input voltage range.

Consumer AdapterLED Driver

Use Scenario: Compact 65 W USB-C PD adapter with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side switch in high-frequency QR flyback with valley-switching control.

Use Value: 900 V rating and 50 V/ns dv/dt immunity allow direct connection to 400 V bus without snubber, simplifying BOM and improving reliability.

Use Scenario: Constant-current LED driver for street lighting (100–200 W, outdoor rated).

IC Role / Device Role / Timing Role: Primary switch in interleaved boost PFC stage feeding downstream buck converter.

Use Value: 68 mJ EAS and 10 A ID,pulse withstand inductive kickback during line surges and lamp hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP9NK90ZFP900 V, 1.4 Ω RDS(on), 42 nC Qg, TO-220FP package (non-isolated tab)Higher conduction loss and gate drive requirement; lower dv/dt rating (25 V/ns)Acceptable where cost is prioritized over efficiency and board space; requires isolation washer for heatsink mounting.
IXTH12N90L2900 V, 1.1 Ω RDS(on), 48 nC Qg, TO-247 packageLarger footprint and higher gate drive power; superior thermal resistance (0.8 K/W) but no integrated diode optimizationBetter for high-temperature, high-power (>600 W) applications where heatsink area is available and diode recovery is externally managed.

Compared with STP9NK90ZFP and IXTH12N90L2, IPP90R1K2C3XKSA2 offers the lowest RDS(on)×Qg FoM and highest dv/dt ruggedness in TO220 form factor-making it optimal for space-constrained, high-efficiency QR flyback and forward converters requiring minimal gate drive overhead and robust transient immunity.

Availability

IPP90R1K2C3XKSA2 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, and consumer USB-C PD adapters requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP90R1K2C3XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS in consumer, computing, and industrial applications.

FAQ

Is IPP90R1K2C3XKSA2 RoHS-compliant and lead-free?

Yes. The device uses Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. Its packaging and assembly processes meet J-STD-20 reflow profile requirements for lead-free soldering, including wave soldering at leads only (260 °C for 10 s at 1.6 mm from case).

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID is 3.2 A at TC = 100 °C, derated from 5.1 A at 25 °C per the thermal curve on page 4 of the datasheet. This reflects safe operation within the SOA limit when mounted on a heatsink providing ≤1.5 K/W thermal resistance.

Does IPP90R1K2C3XKSA2 have an integrated body diode, and what are its key parameters?

Yes. It features an integrated fast-recovery body diode with VSD = 0.8–1.2 V at IF = 2.8 A and TJ = 25 °C, trr = 310 ns, Qrr = 3.7 µC, and IRRM = 19 A. These values are measured under standardized conditions (VR = 400 V, diF/dt = 100 A/µs) and support soft-switching in QR and active-clamp topologies.

Can IPP90R1K2C3XKSA2 replace older CoolMOS™ C2 devices in existing designs?

Yes, with minor layout review. IPP90R1K2C3XKSA2 is a direct drop-in replacement for IPP90R1K2C2XKSA2, offering identical pinout, package, and voltage/current ratings, plus improved Qg (28 nC vs. 32 nC) and dv/dt ruggedness (50 V/ns vs. 40 V/ns). No gate driver or snubber changes are required.

IPP90R1K2C3XKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
710 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP90R1K2C3XKSA2 FAQ

1.How can I place an order for IPP90R1K2C3XKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP90R1K2C3XKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP90R1K2C3XKSA2 reliable?

The price and inventory of IPP90R1K2C3XKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP90R1K2C3XKSA2 is usually 5 days.

3.What payment methods are accepted for IPP90R1K2C3XKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP90R1K2C3XKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP90R1K2C3XKSA2?

IPP90R1K2C3XKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP90R1K2C3XKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP90R1K2C3XKSA2?

For technical support, including IPP90R1K2C3XKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP90R1K2C3XKSA2 requirements.

6.How does Aetrix verify that IPP90R1K2C3XKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP90R1K2C3XKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP90R1K2C3XKSA2 meets industry standards.

7.What is the process for return or replacement of IPP90R1K2C3XKSA2?

All IPP90R1K2C3XKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP90R1K2C3XKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP90R1K2C3XKSA2 part is unused and in its original packaging.

Return procedure for IPP90R1K2C3XKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP90R1K2C3XKSA2 Tags

  • IPP90R1K2C3XKSA2
  • IPP90R1K2C3XKSA2 PDF
  • IPP90R1K2C3XKSA2 Datasheet
  • IPP90R1K2C3XKSA2 Specifications
  • IPP90R1K2C3XKSA2 Images
  • Infineon Technologies
  • Infineon Technologies IPP90R1K2C3XKSA2
  • Buy IPP90R1K2C3XKSA2
  • IPP90R1K2C3XKSA2 Price
  • IPP90R1K2C3XKSA2 Distributor
  • IPP90R1K2C3XKSA2 Supplier
  • IPP90R1K2C3XKSA2 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER