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Infineon Technologies IPQC60T022S7AXTMA1

Part No.:
IPQC60T022S7AXTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIPQC60T022S7AXTMA1.pdf
Description:
AUTOMOTIVE_COOLMOS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Product details

Overview

IPQC60T022S7AXTMA1 from Infineon is a 600 V, 22 mΩ CoolMOS™ S7TA superjunction MOSFET with integrated temperature sensor (TS), optimized for static switching and high-current low-frequency applications such as HV eDisconnect switches and on-board chargers. It features 371 A pulsed drain current, 150 nC total gate charge, and 0.3 °C/W junction-to-case thermal resistance.

For engineers reviewing the IPQC60T022S7AXTMA1 datasheet, IPQC60T022S7AXTMA1 pinout, IPQC60T022S7AXTMA1 application, or IPQC60T022S7AXTMA1 equivalent, key selection criteria include RDS(on) stability over temperature, embedded junction temperature sensing accuracy, dv/dt ruggedness (20 V/ns), and gate drive compatibility with standard 12 V logic-level drivers.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ SJ technology with monolithically integrated silicon diode and precision temperature-sensing p-n junction. The TS pin (Pin 3) provides forward-voltage-based junction temperature measurement with ±5.2–5.96 mV/K coefficient across 25–175 °C.

It operates in non-linear (switching-only) mode per design specification, with gate threshold voltage of 3.5–4.5 V and plateau voltage of 5.4 V. Its 5640 pF input capacitance and 89 pF output capacitance support controlled turn-on/turn-off timing under 300 V bus conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Withstands DC blocking voltage up to 600 V in HV DC switch and rectifier applications.
RDS(on), max 22 mΩ @ Tj = 25 °C - Enables low conduction loss at 23 A continuous drain current, reducing heatsink size.
Qg, typ 150 nC - Defines gate driver power requirement; compatible with standard 1–2 A peak gate drivers.
Tj max 175 °C (limited duration) - Supports extended thermal margin for short-term overload in circuit breakers and eFuses.
VSD 0.82 V @ IF = 23 A - Low body diode forward drop improves efficiency in freewheeling and synchronous rectification.
dv/dt ruggedness 20 V/ns - Ensures reliable operation without spurious turn-on during fast voltage transients in high-power inverters.
TS sensitivity 5.2–5.96 mV/K - Enables ±1.5 °C junction temperature estimation accuracy using simple ADC sampling.

Pinout & Package

IPQC60T022S7AXTMA1 uses PG-HDSOP-22 package with exposed thermal tab (Drain-connected). Pin numbering follows standard HDSOP layout; Gate, Source, Drain, and Temperature Sense terminals are physically isolated and functionally non-interchangeable.

Pin/Terminal Circuit Role Design Meaning
1–2 Gate Control input; requires 12 V drive for full enhancement; gate resistor placement recommended on Driver Source (Pin 4) for paralleling.
3 Temperature Sense (TS) Monolithic p-n junction for direct junction temperature monitoring; forward voltage varies linearly with Tj.
4 Driver Source Reference node for gate driver return path; not electrically identical to Power Source (Pins 5–11); critical for accurate gate control in multi-device layouts.
5–11 Power Source Main current return path for high-current conduction; separate from Driver Source to avoid ground bounce in high-di/dt switching.
12–22 + Tab Drain High-voltage output terminal; tab is electrically connected to Drain and serves as primary thermal interface to heatsink.

Key Features

Feature Design Value
Embedded temperature sensor Monolithic silicon junction enables real-time Tj monitoring without external thermistors or ICs-reducing BOM count and PCB area.
Optimized for static switching Low RDS(on) and high pulse current (371 A) support zero-crossing and latching switch architectures in HV eDisconnect systems.
High dv/dt immunity 20 V/ns rating allows robust operation in noisy high-voltage bus environments without false triggering or gate oscillation.
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (Class 2 HBM), enabling use in OBC and traction auxiliary systems.

Applications

HV eDisconnect Switch On-Board Charger (OBC) Input Stage

Use Scenario: High-voltage DC isolation in battery management systems during fault conditions or service disconnect.

IC Role / Device Role / Timing Role: Main static power switch controlling 400–800 V DC bus; activated only during safe-state transitions.

Use Value: Integrated temperature sensing enables precise thermal derating during sustained fault currents, preventing thermal runaway without external sensors.

Use Scenario: AC-DC front-end switching in bidirectional OBCs handling >11 kW power levels.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in active rectification or pre-charge circuits operating at <10 kHz.

Use Value: 22 mΩ RDS(on) minimizes conduction loss at 23 A continuous, while 371 A pulse rating supports inrush current limiting.

DC Circuit Breaker High-Power Line Rectification

Use Scenario: Solid-state replacement for electromechanical breakers in industrial DC distribution panels.

IC Role / Device Role / Timing Role: Primary current-interrupting element with diagnostics via TS pin for predictive maintenance.

Use Value: Eliminates contact arcing and mechanical wear; temperature feedback allows dynamic current derating based on ambient and load history.

Use Scenario: High-efficiency uncontrolled rectification in industrial motor drives and UPS systems.

IC Role / Device Role / Timing Role: Low-loss freewheeling path using internal body diode (VSD = 0.82 V) during commutation.

Use Value: Reduced forward voltage vs. discrete Si diodes lowers conduction losses by ~15% at 23 A, improving system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage static switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW60R024P7XKSA1 600 V, 24 mΩ, no integrated temperature sensor; TO-247 package; higher RDS(on) and no TS functionality. Lacks junction temperature monitoring; requires external thermal protection circuitry for same safety-critical functions. Select when TS capability is unnecessary and through-hole mounting is preferred for manual assembly or legacy designs.
IPB60R022S7LXTMA1 600 V, 22 mΩ, same S7TA die but in PG-TO263-7 package; no TS pin; different pinout and thermal interface. No temperature sensing; lower thermal resistance (0.25 °C/W) but no diagnostic capability for predictive thermal management. Choose for maximum thermal performance where board space permits larger footprint and diagnostics are handled externally.

Compared with IPQC60T022S7AXTMA1, the P7XKSA1 lacks thermal intelligence and requires added components for safe operation, while the S7LXTMA1 trades TS functionality for improved thermal dissipation-making the original optimal for compact, self-monitoring HV switch designs.

Availability

IPQC60T022S7AXTMA1 is available at Aetrix Electronics and suitable for HV eDisconnect switches, on-board chargers, and DC circuit breakers requiring stable component supply, AEC-Q101 qualification, and integrated thermal diagnostics.

Supply support for IPQC60T022S7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ S7TA product line, engineered specifically for high-reliability, low-frequency high-voltage switching applications where thermal awareness and conduction efficiency are critical-such as solid-state circuit protection and EV powertrain subsystems.

FAQ

Can the Driver Source (Pin 4) and Power Source (Pins 5–11) be connected together?

No. The Driver Source and Power Source pins are electrically isolated and serve distinct roles: Driver Source provides clean gate return reference to suppress noise-induced turn-on, while Power Source carries high di/dt current. Interconnecting them compromises gate control integrity and may cause erratic switching or shoot-through in paralleled configurations.

What is the maximum allowable gate resistor value for reliable turn-off?

The datasheet recommends placing the gate resistor on the Driver Source (Pin 4), not the Gate. For reliable turn-off with 12 V drive, RG ≤ 5.3 Ω is validated in test conditions. Higher values increase td(off) and risk incomplete turn-off under high dv/dt, especially above 100 V/ns transients.

Is the internal body diode rated for continuous conduction?

Yes-the integrated body diode supports continuous forward current up to 24 A at TC = 140 °C and pulsed current up to 371 A. Its 0.82 V forward voltage at 23 A ensures low-loss freewheeling, but reverse recovery charge (Qrr = 10 µC) must be managed in hard-switched topologies to limit switching loss.

How is the temperature sensor calibrated across operating range?

The TS pin provides a forward-biased p-n junction with specified VF_25 = 1.56–2.096 V at 25 °C and VF_175 = 0.665–1.375 V at 175 °C, with temperature coefficient of 5.2–5.96 mV/K. Calibration requires two-point characterization (e.g., 25 °C and 125 °C) using known thermal chambers; no factory calibration data is shipped with the device.

IPQC60T022S7AXTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IPQC60T022S7AXTMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPQC60T022S7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPQC60T022S7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPQC60T022S7AXTMA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPQC60T022S7AXTMA1?

For technical support, including IPQC60T022S7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPQC60T022S7AXTMA1 requirements.

6.How does Aetrix verify that IPQC60T022S7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPQC60T022S7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPQC60T022S7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPQC60T022S7AXTMA1?

All IPQC60T022S7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPQC60T022S7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPQC60T022S7AXTMA1 part is unused and in its original packaging.

Return procedure for IPQC60T022S7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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