Infineon Technologies IPQC65R017CFD7XTMA1

Overview

IPQC65R017CFD7XTMA1 from Infineon is a 650 V, 17 mΩ ultra-low-R_DS(on) Superjunction MOSFET in PG-HDSOP-22 package with integrated fast body diode, designed for high-efficiency resonant topologies including LLC and phase-shift full-bridge (ZVS). It delivers 524 A pulsed drain current, 236 nC total gate charge, and 1300 A/µs diode commutation speed, enabling industrial SMPS in server, telecom, EV charging, and solar inverters.

For engineers reviewing the IPQC65R017CFD7XTMA1 datasheet, IPQC65R017CFD7XTMA1 pinout, IPQC65R017CFD7XTMA1 application, or IPQC65R017CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness (1300 A/µs diF/dt), low temperature coefficient of R_DS(on), E_oss of 35.3 µJ at 400 V, and validated JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device employs charge compensation superjunction architecture with optimized cell pitch and trench depth to reduce both conduction and switching losses. Its ultra-fast body diode achieves 295–443 ns reverse recovery time and 2.5–5 µC Q_rr under 100 A/µs diF/dt conditions.

The MOSFET integrates source-sense (S) and driver-source (DS) pins to enable precise gate drive control and minimize common-source inductance effects. Gate plateau voltage is fixed at 5.8 V, supporting stable turn-on in high-dV/dt ZVS environments up to 120 V/ns.

Key Specifications

Pinout & Package

Package: PG-HDSOP-22 - Thermally enhanced 22-pin surface-mount package with exposed copper drain tab (pins 12–22 + tab) for low-inductance, high-current routing and direct heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Compared with IPW65R017C7 and IPP65R017CFD7, the IPQC65R017CFD7XTMA1 uniquely combines Kelvin source routing, 0.18 °C/W thermal resistance, and 1300 A/µs diF/dt-making it the only option qualified for high-reliability, high-power-density ZVS systems requiring simultaneous low-loss switching and hard-commutation immunity.

Availability

IPQC65R017CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV DC fast chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPQC65R017CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The CoolMOS™ CFD7 product line targets high-efficiency AC-DC and DC-DC conversion in industrial and infrastructure applications, specifically engineered to replace older SJ MOSFET generations in ZVS topologies while maintaining pin-to-pin compatibility where package allows.

FAQ

Can IPQC65R017CFD7XTMA1 be paralleled with identical units?

Yes, but only with strict layout symmetry: matched gate resistor placement on Driver Source (Pin 2), identical trace lengths for all Drain/Source paths, and shared thermal interface to minimize dynamic current imbalance. The datasheet explicitly recommends gate resistors on Driver Source-not Gate-to preserve switching synchronization across paralleled devices.

What is the maximum recommended gate resistor value for ZVS operation?

The datasheet specifies RG = 1.8 Ω for characterization at 400 V VDD and 61.6 A ID. For ZVS in LLC converters, RG should be ≤2.2 Ω to maintain td(off) ≤180 ns and prevent overlap-induced losses; values >3.3 Ω degrade soft-switching margin and increase E_oss-related losses disproportionately.

Is the internal body diode suitable for continuous freewheeling in hard-switched PFC?

No. While the diode supports hard commutation up to 1300 A/µs, its Q_rr (2.5–5 µC) and trr (295–443 ns) are optimized for ZVS recovery-not continuous conduction. In hard-switched boost PFC, this diode would generate excessive switching loss and thermal stress; discrete SiC Schottky diodes remain mandatory.

Does the PG-HDSOP-22 package require special PCB layout rules?

Yes: the exposed drain tab (Pins 12–22 + tab) must connect to ≥6 cm² of 70 µm copper on inner layer(s) with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to achieve R_thJA ≤55 °C/W. Power Source (Pins 3–11) and Driver Source (Pin 2) traces must be separated by ≥0.5 mm to avoid coupling-induced gate oscillation during high-di/dt transitions.