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Infineon Technologies IPQC65R040CFD7XTMA1

Part No.:
IPQC65R040CFD7XTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
22-PowerBSOP Module
Datasheet:
AetrixIPQC65R040CFD7XTMA1.pdf
Description:
HIGH POWER_NEW
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,483

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Product details

Overview

IPQC65R040CFD7XTMA1 from Infineon is a 650 V superjunction MOSFET with ultra-fast body diode, 40 mΩ max RDS(on), 97 nC total gate charge, and 211 A pulsed drain current - optimized for zero-voltage switching (ZVS) topologies in high-efficiency industrial SMPS, server power supplies, and EV charging systems.

For engineers reviewing the IPQC65R040CFD7XTMA1 datasheet, IPQC65R040CFD7XTMA1 pinout, IPQC65R040CFD7XTMA1 application, or IPQC65R040CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness (1300 A/µs diF/dt), low temperature dependency of RDS(on), and PG-HDSOP-22 package thermal performance (RthJC = 0.35 °C/W).

Technical Context

This CoolMOS™ CFD7 device integrates a fast-recovery body diode (trr = 180–270 ns, Qrr = 1.3–2.6 µC) and exhibits low effective output capacitance (Co(er) = 185 pF at 400 V), enabling reduced turn-off losses in resonant converters. Its gate plateau voltage is 5.7 V, supporting stable drive in high-noise ZVS environments.

The MOSFET features asymmetric source configuration: Driver Source (Pin 2) and Power Source (Pins 3–11) are functionally distinct and non-interchangeable. Gate resistor placement on Driver Source - not Gate - is required for paralleling to avoid oscillation and ensure balanced dynamic sharing.

Key Specifications

Parameter Value and Actual Design Meaning
VDS max 650 V - supports 400 V bus designs with 1.6× safety margin against transients in telecom and EV charging.
RDS(on) max 40 mΩ @ Tj = 25°C - enables <1.5 W conduction loss at 24.8 A, critical for high-power-density industrial SMPS.
Qg typ 97 nC - determines gate driver power requirement; compatible with standard 1–2 A peak drivers in LLC controllers.
Eoss @ 400 V 14.8 µJ - directly reduces turn-off energy loss in phase-shift full-bridge and LLC resonant circuits.
diF/dt max 1300 A/µs - ensures robust hard-switching capability during reverse recovery, eliminating need for external snubbers.
Tj max 150 °C - qualified per JEDEC for industrial applications, enabling operation in sealed enclosures without forced air.
RthJC 0.35 °C/W - allows >350 W continuous dissipation with minimal heatsink, validated for vertical-mount PCB layout.

Pinout & Package

Package: PG-HDSOP-22 - thermally enhanced surface-mount package with exposed copper tab (Drain-connected) for direct heatsink mounting and low-inductance power routing.

Pin/Terminal Circuit Role Design Meaning
Tab & Pins 12–22 Drain High-current, low-inductance drain connection; tab must be soldered to heatsink for thermal and electrical performance.
Pin 1 Gate Main gate input; requires low-impedance drive path to minimize ringing in high-dv/dt ZVS operation.
Pins 3–11 Power Source Low-side return path for main load current; connects to power ground plane, not signal ground.
Pin 2 Driver Source Reference node for gate driver IC feedback; must be routed separately from Power Source to prevent gate loop instability.

Key Features

Feature Design Value
Ultra-fast body diode trr = 180–270 ns and Qrr = 1.3–2.6 µC enable clean ZVS transitions without voltage spikes in LLC half-bridge.
Reduced switching losses Eoss = 14.8 µJ and Co(er) = 185 pF cut turn-off loss by ≥25% vs. prior CFD2 generation at 400 V bus.
Low RDS(on) temp coefficient RDS(on) increases only ~1.5× from 25°C to 150°C - maintains efficiency stability across full industrial temperature range.
Hard commutation ruggedness 1300 A/µs diF/dt rating eliminates need for external diode clamping in phase-shift full-bridge synchronous rectification.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for AI server rack PSUs.

IC Role / Device Role / Timing Role: High-side ZVS switch operating at 200–300 kHz with 400 V nominal bus.

Use Value: 14.8 µJ Eoss and 185 pF Co(er) reduce turn-off loss by 32% versus CFD2, enabling >97% full-load efficiency.

Use Scenario: Main switch in 2.5 kW telecom rectifier with 54 V output and 380 V PFC front-end.

IC Role / Device Role / Timing Role: Phase-shift full-bridge (PSFB) primary switch with adaptive dead-time control.

Use Value: 1300 A/µs diF/dt rating prevents shoot-through during hard commutation events, eliminating external snubber components.

EV Onboard Charger Solar String Inverter

Use Scenario: Isolated DC–DC stage in 11 kW bidirectional OBC handling 400–800 V battery range.

IC Role / Device Role / Timing Role: Resonant tank switch in dual-active-bridge (DAB) topology with variable frequency control.

Use Value: 0.35 °C/W RthJC enables 64 A continuous conduction without derating at 85°C ambient, reducing heatsink mass by 40%.

Use Scenario: High-side switch in 10 kW string inverter DC–AC stage using three-level NPC topology.

IC Role / Device Role / Timing Role: 650 V blocking switch with integrated fast diode for reactive power handling.

Use Value: 1.0 V VSD at 24.8 A and 25°C minimizes conduction loss during reactive current flow, improving PF correction efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW65R041CFD7 TO-247-3L package; higher RthJA (62 °C/W); identical RDS(on) and Qg. Requires larger heatsink and through-hole PCB layout; unsuitable for space-constrained SMD designs. Select when mechanical robustness and field-serviceability outweigh density requirements.
IPP65R045C7 CFD7 predecessor; 45 mΩ RDS(on); 112 nC Qg; 1000 A/µs diF/dt. Higher conduction and switching losses; limited to ≤150 kHz operation in LLC. Acceptable for cost-sensitive 1–2 kW telecom supplies where efficiency margin is relaxed.

Compared with IPW65R041CFD7 and IPP65R045C7, IPQC65R040CFD7XTMA1 delivers superior power density via PG-HDSOP-22 thermal performance and best-in-class diF/dt, making it optimal for compact, high-frequency ZVS systems where board area and thermal management are constrained.

Availability

IPQC65R040CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPQC65R040CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency resonant converters in industrial and renewable energy systems.

FAQ

Can IPQC65R040CFD7XTMA1 replace IPQC65R041CFD7 in existing designs?

No - IPQC65R041CFD7 has 41 mΩ RDS(on) and different gate charge profile (Qg = 92 nC). Substituting IPQC65R040CFD7XTMA1 may increase gate drive loss and alter ZVS timing due to its higher Qg (97 nC) and lower RDS(on). Layout and driver tuning are required.

What is the maximum recommended gate resistor value for ZVS operation?

For reliable ZVS in LLC converters, the gate resistor on Driver Source (Pin 2) should not exceed 10 Ω. Higher values delay turn-on and risk incomplete ZVS at light loads; 4.7 Ω is typical for 200–300 kHz operation with 13 V gate drive.

Is the PG-HDSOP-22 package RoHS and REACH compliant?

Yes - IPQC65R040CFD7XTMA1 meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, with lead-free matte tin plating and halogen-free molding compound, verified in Infineon's material declaration document 2022-11-23 Rev. 2.0.

Why must Power Source and Driver Source pins not be exchanged?

Power Source (Pins 3–11) carries high di/dt load current, while Driver Source (Pin 2) provides low-noise reference for gate driver feedback. Swapping them introduces ground bounce into the gate loop, causing erratic switching, increased EMI, and potential device failure under ZVS conditions.

IPQC65R040CFD7XTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
22-PowerBSOP Module
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs:
97 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4975 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
357W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-22

IPQC65R040CFD7XTMA1 FAQ

1.How can I place an order for IPQC65R040CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPQC65R040CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPQC65R040CFD7XTMA1 reliable?

The price and inventory of IPQC65R040CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPQC65R040CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPQC65R040CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPQC65R040CFD7XTMA1 transactions.

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IPQC65R040CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPQC65R040CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPQC65R040CFD7XTMA1?

For technical support, including IPQC65R040CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPQC65R040CFD7XTMA1 requirements.

6.How does Aetrix verify that IPQC65R040CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPQC65R040CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPQC65R040CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPQC65R040CFD7XTMA1?

All IPQC65R040CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPQC65R040CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPQC65R040CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPQC65R040CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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