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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS031N03L G

Name: IPS031N03L G
Brand: Infineon Technologies
SKU: IPS031N03L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS031N03L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS031N03L G.pdf

Description:: MOSFET N-CH 30V 90A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPS031N03L G from Infineon Technologies is an N-channel logic-level OptiMOS®3 power MOSFET optimized for high-efficiency DC/DC converters and SMPS applications, featuring 30 V V_DS, 3.1 mΩ R_DS(on) at V_GS = 10 V, 90 A continuous drain current at T_C = 25 °C, and avalanche-rated ruggedness for reliable operation in hard-switching topologies such as synchronous buck converters in server VRMs.

For engineers reviewing the IPS031N03L G datasheet, IPS031N03L G pinout, IPS031N03L G application, or IPS031N03L G equivalent, key selection criteria include gate charge (Q_g = 25–33 nC), low R_DS(on) × Q_g figure-of-merit, logic-level drive compatibility (V_GS(th) = 1–2.2 V), and TO252-3 package thermal performance (R_thJC = 1.6 K/W).

Technical Context

This device employs trench-based silicon technology with optimized cell pitch and gate oxide design to achieve ultra-low on-resistance while maintaining fast switching speed and robust safe operating area. Its 3.1 mΩ R_DS(on) at 10 V and 3.5 mΩ at 4.5 V enables high-current conduction with minimal I²R loss in compact 12 V input VRMs.

The MOSFET integrates a co-packaged, avalanche-rated body diode with 0.82–1.1 V forward voltage at 30 A and 20 nC reverse recovery charge (Q_rr), supporting efficient synchronous rectification and reducing cross-conduction risk in high-frequency (>500 kHz) buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V input bus systems with margin against transients and ringing.
R_DS(on) max	3.1 mΩ @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 90 A, critical for high-current VRM phases.
I_D cont.	90 A @ T_C = 25 °C - Rated for high-current power stages without forced airflow or heatsink.
Q_g	25–33 nC - Low total gate charge reduces driver power and enables fast turn-on/turn-off (t_r = 6 ns, t_f = 5 ns).
V_GS(th)	1–2.2 V - Logic-level compatible with 3.3 V and 5 V gate drivers; ensures full enhancement at low drive voltages.
E_AS	60 mJ - Avalanche energy rating supports unclamped inductive switching in non-synchronous designs.
R_thJC	1.6 K/W - Enables direct PCB copper cooling; achieves <100 °C junction rise at 90 A with 6 cm² copper pad.

Pinout & Package

IPS031N03L G is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain tab for thermal conduction. The package features gull-wing leads and is RoHS-compliant with Pb-free plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground plane or source of synchronous FET pair.
Pin 2 (Gate)	Control input	Receives PWM signal; requires <2.2 V threshold for full enhancement; driven via low-impedance path to minimize ringing.
Pin 3 (Drain)	Power output / Drain	Exposed metal tab; electrically connected to drain; must be soldered to large copper area for thermal management.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g FOM	≤100 mΩ·nC - Balances conduction and switching losses for >95% efficiency in 500 kHz–1 MHz buck converters.
Avalanche-rated operation	Single-pulse I_AS = 90 A, E_AS = 60 mJ - Eliminates need for external clamping in non-synchronous flyback or boost stages.
Logic-level gate drive	V_GS(th) = 1–2.2 V - Compatible with standard microcontroller GPIO or dedicated 3.3 V gate drivers without level-shifting.
Low reverse recovery charge	Q_rr = 20 nC - Reduces diode recovery loss and EMI in synchronous rectifier configurations.

Applications

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage in enterprise servers.

IC Role / Device Role / Timing Role: High-side or low-side synchronous FET in 48 V → 1 V conversion stage.

Use Value: 3.1 mΩ R_DS(on) and 25–33 nC Q_g enable >94% efficiency at 100 A per phase with minimal thermal derating.

Use Scenario: Isolated 24 V input to 5 V/12 V output DC/DC module for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter.

Use Value: 30 V rating and avalanche ruggedness tolerate 40 V input surges; 1.6 K/W R_thJC sustains operation at 75 °C ambient without heatsink.

Automotive ADAS Camera Power

Telecom PoE+ Midspan Supply

Use Scenario: Compact 12 V → 3.3 V point-of-load regulator powering image sensor and ISP in rear-view camera.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in monolithic buck IC or discrete controller solution.

Use Value: Logic-level V_GS(th) ensures full turn-on from 3.3 V gate driver; 0.82 V V_SD minimizes body diode conduction loss during dead-time.

Use Scenario: 57 V input primary switch in PoE+ midspan PSE delivering up to 30 W per port.

IC Role / Device Role / Timing Role: Main switching transistor in flyback or forward topology with integrated current sensing.

Use Value: 90 A pulsed current rating and 400 A I_D,pulse support high peak currents during IEEE 802.3at Class 4 detection and startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 42 nC; TO-220 package	Higher gate charge increases switching loss; through-hole mounting limits board density	Prefer when legacy TO-220 footprint or higher surge current margin required
STL325N3LLH6	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 38 nC; same PG-TO252-3 package	Slightly lower R_DS(on) but higher Q_g; no avalanche rating specified	Prefer when lowest conduction loss dominates; avoid in unclamped inductive loads

Compared with IRL3803PbF and STL325N3LLH6, IPS031N03L G offers the best balance of low R_DS(on), moderate Q_g, avalanche ruggedness, and surface-mount thermal performance-making it optimal for space-constrained, high-reliability DC/DC stages where both efficiency and robustness are critical.

Availability

IPS031N03L G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive ADAS power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPS031N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

IPS031N03L G belongs to the OptiMOS®3 family, designed specifically for high-frequency, high-current DC/DC conversion in computing, telecom, and industrial power supplies where low R_DS(on) and fast switching are essential.

FAQ

Is IPS031N03L G suitable for synchronous rectification?

Yes. Its low 3.1 mΩ R_DS(on), logic-level V_GS(th) (1–2.2 V), and low 20 nC Q_rr make it well-suited for synchronous rectifier roles in buck and forward converters. The body diode's 0.82–1.1 V V_SD at 30 A further reduces conduction loss during dead-time intervals.

What is the maximum recommended gate resistor value for 1 MHz switching?

For 1 MHz operation with minimal overshoot, a gate resistor of 1.6–4.7 Ω is recommended. This balances gate drive strength (given R_G = 1.6 Ω internal) and ringing suppression, especially when paired with a 3.3 V or 5 V gate driver capable of ±2 A peak current.

Does IPS031N03L G require a heatsink in a 90 A application?

No external heatsink is required if mounted on ≥6 cm² of 70 µm copper on FR4 PCB in vertical orientation with still air. At 90 A and 25 °C case temperature, junction-to-case thermal resistance (1.6 K/W) results in ~144 °C junction rise-within the 175 °C absolute max rating.

Can IPS031N03L G replace IPD031N03L G in existing designs?

Yes-IPS031N03L G and IPD031N03L G share identical electrical specifications, package (PG-TO252-3-11), marking (031N03L), and qualification. They differ only in tape-and-reel packaging and minor internal lot traceability; no layout or firmware changes are needed for drop-in replacement.

IPS031N03L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

IPS031N03L G FAQ

1.How can I place an order for IPS031N03L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS031N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS031N03L G reliable?

The price and inventory of IPS031N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS031N03L G is usually 5 days.

3.What payment methods are accepted for IPS031N03L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS031N03L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS031N03L G?

IPS031N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS031N03L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS031N03L G?

For technical support, including IPS031N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS031N03L G requirements.

6.How does Aetrix verify that IPS031N03L G is sourced from the original manufacturer or authorized distributors?

All IPS031N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS031N03L G meets industry standards.

7.What is the process for return or replacement of IPS031N03L G?

All IPS031N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPS031N03L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS031N03L G part is unused and in its original packaging.

Return procedure for IPS031N03L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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