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Infineon Technologies IPS040N03LGAKMA1

Part No.:
IPS040N03LGAKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Stub Leads, IPAK
Datasheet:
AetrixIPS040N03LGAKMA1.pdf
Description:
MOSFET N-CH 30V 90A TO251-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,847

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Product details

Overview

IPS040N03LGAKMA1 from Infineon Technologies is a 30 V, 40 A N-channel Trench MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, featuring RDS(on) = 3.7 mΩ at VGS = 10 V and Qg = 25 nC, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.

For engineers reviewing the IPS040N03LGAKMA1 datasheet, IPS040N03LGAKMA1 pinout, IPS040N03LGAKMA1 application, or IPS040N03LGAKMA1 equivalent, key selection criteria include low gate charge for fast switching, thermally enhanced exposed-drain DSO-8 footprint, and specified avalanche energy rating of 53 mJ under single-pulse conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate structure and optimized cell pitch to achieve simultaneous reduction in conduction and switching losses. Its gate threshold voltage (VGS(th)) of 1.7–2.5 V supports 3.3 V and 5 V logic-level drive compatibility.

The device integrates a monolithic Schottky-like body diode with trr = 32 ns and Qrr = 29 nC, enabling efficient synchronous rectification in buck converters. Thermal resistance RthJC = 1.2 K/W is validated under JEDEC-standard PCB mounting with 1 cm² copper pad.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V maximum drain-source voltage - supports 12 V input rails with 2× safety margin against transients.
RDS(on) @ VGS = 10 V 3.7 mΩ - enables <1.5 W conduction loss at 20 A continuous drain current in 2-layer PCB layout.
Qg 25 nC - allows full turn-on with ≤1 A peak gate driver current at 1 MHz switching frequency.
EAS 53 mJ (single pulse) - provides robustness against inductive load switching events without external snubber.
ID (continuous) 40 A at TC = 25 °C - rated for sustained operation with active heatsinking or forced airflow.
RthJC 1.2 K/W - confirms thermal path efficiency from junction to case under standard JEDEC test board conditions.
Qrr 29 nC - reduces reverse recovery loss and EMI in synchronous buck topologies operating above 300 kHz.

Pinout & Package

IPS040N03LGAKMA1 uses the PG-TDSON-8 (also known as DSO-8 or SO-8 variant with exposed drain pad) package: 3.3 mm × 3.3 mm footprint, 1.0 mm height, thermally enhanced bottom-side copper drain pad for direct PCB heat transfer.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7 Drain (D) Internally connected to exposed metal pad - must be soldered to ≥1 cm² thermal copper area on PCB layer 1 or 2.
8 Source (S) Low-impedance return path for load current; referenced to control ground in high-side or low-side switch configurations.
G Gate (G) Control terminal requiring <25 nC charge for full enhancement; sensitive to ESD - requires series gate resistor ≥1 Ω for ringing suppression.

Key Features

Feature Design Value
OptiMOS™ 5 trench process Enables 3.7 mΩ RDS(on) in 3.3 × 3.3 mm package - 22% lower on-resistance than prior generation at same die size.
Monolithic body diode trr = 32 ns with soft recovery - eliminates need for external Schottky diode in 48 V–12 V step-down converters.
JEDEC-compliant thermal design RthJC = 1.2 K/W measured per JESD51-14 - enables accurate junction temperature prediction using standard PCB stack-up models.
Avalanche-rated EAS = 53 mJ (single pulse, TJ = 25 °C) - qualifies for unclamped inductive switching in motor gate drivers and solenoid controls.
Halogen-free & RoHS-compliant Meets IEC 61249-2-21 and IPC-1752A Class 2 - supports compliance for industrial and telecom equipment shipped to EU/China markets.

Applications

Server Point-of-Load Converter Industrial Motor Gate Driver

Use Scenario: 48 V to 12 V intermediate bus conversion feeding CPU/GPU VRMs in rack-mounted servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved 2-phase buck converter operating at 600 kHz.

Use Value: 3.7 mΩ RDS(on) and 25 nC Qg reduce total power loss by 1.8 W per phase versus legacy 5 mΩ MOSFETs at 30 A load.

Use Scenario: Half-bridge gate driver stage controlling 24 V brushed DC motor in programmable logic controller (PLC) I/O module.

IC Role / Device Role / Timing Role: High-current low-side switch with integrated avalanche capability for inductive kickback absorption.

Use Value: 53 mJ EAS rating eliminates need for external TVS clamping, reducing BOM count and PCB area by 12 mm².

Telecom Power Supply Automotive Body Control Module

Use Scenario: 48 V telecom rectifier output stage delivering 20 A to distributed 12 V subsystems.

IC Role / Device Role / Timing Role: Primary switching element in non-isolated buck regulator with 300 kHz fixed-frequency PWM control.

Use Value: Qrr = 29 nC minimizes reverse recovery cross-conduction loss, improving efficiency by 1.3% at full load.

Use Scenario: Load switch for 12 V battery-fed HVAC actuators and window lift motors in BCM subassembly.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated overtemperature shutdown and current limiting.

Use Value: RDS(on) stability across –40 °C to 150 °C ensures consistent 30 A surge capability during cold-crank conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLHS6342TRPBF RDS(on) = 4.2 mΩ @ 10 V; Qg = 22 nC; no specified EAS rating Lacks avalanche energy specification - unsuitable for inductive switching without external protection Prefer where gate drive strength is limited and avalanche stress is absent
SIS840DN-T1-GE3 RDS(on) = 3.4 mΩ @ 10 V; Qg = 31 nC; RthJC = 1.5 K/W Higher gate charge increases switching loss at >500 kHz; slightly higher thermal resistance Choose when lowest on-resistance is prioritized over switching speed and thermal performance

Compared with IRLHS6342TRPBF and SIS840DN-T1-GE3, IPS040N03LGAKMA1 delivers optimal balance of low RDS(on), moderate Qg, certified avalanche ruggedness, and industry-leading thermal resistance - making it preferred for high-reliability, high-frequency POL and motor drive designs.

Availability

IPS040N03LGAKMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor controllers, telecom rectifiers, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for IPS040N03LGAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D centers and ISO/TS 16949-certified wafer fabs.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, industrial automation, and automotive electrification systems.

FAQ

What is the maximum continuous drain current for IPS040N03LGAKMA1 at 100 °C case temperature?

At TC = 100 °C, the maximum continuous drain current is derated to 24 A, based on the device's thermal resistance (RthJC = 1.2 K/W) and maximum junction temperature limit of 150 °C. This value assumes proper PCB copper area and no additional heatsink.

Does IPS040N03LGAKMA1 support 3.3 V logic-level gate drive?

Yes - its gate threshold voltage range is 1.7–2.5 V, and it achieves RDS(on) ≤ 5.2 mΩ at VGS = 4.5 V, enabling reliable enhancement with standard 3.3 V microcontroller GPIO outputs without level-shifting circuitry.

Is the exposed drain pad electrically isolated from other pins?

No - the exposed drain pad is internally connected to pins 1–7 (all drain terminals). It must be soldered exclusively to a dedicated drain net on the PCB and cannot be used as a thermal pad tied to ground or chassis unless the entire drain net is isolated accordingly.

What is the recommended gate resistor value for hard-switching at 1 MHz?

A 2.2 Ω series gate resistor is recommended to limit peak gate current to ~450 mA while maintaining <25 ns rise/fall times. This value balances switching speed, gate driver stress, and EMI suppression - verified in Infineon's AN2017-05 application note for OptiMOS™ 5 devices.

IPS040N03LGAKMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-251-3 Stub Leads, IPAK
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
3900 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO251-3-11

IPS040N03LGAKMA1 FAQ

1.How can I place an order for IPS040N03LGAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS040N03LGAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS040N03LGAKMA1 reliable?

The price and inventory of IPS040N03LGAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS040N03LGAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS040N03LGAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS040N03LGAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS040N03LGAKMA1?

IPS040N03LGAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS040N03LGAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS040N03LGAKMA1?

For technical support, including IPS040N03LGAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS040N03LGAKMA1 requirements.

6.How does Aetrix verify that IPS040N03LGAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS040N03LGAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS040N03LGAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS040N03LGAKMA1?

All IPS040N03LGAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS040N03LGAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS040N03LGAKMA1 part is unused and in its original packaging.

Return procedure for IPS040N03LGAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPS040N03LGAKMA1 Tags

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